Two-dimensional penta-like PdPSe with a puckered pentagonal structure: a first-principles study

Contact evaluation of the penta-PdPSe/graphene vdW heterojunction: tuning the Schottky barrier and optical properties

In this work, we design a van der Waals heterojunction composed of semiconducting penta-PdPSe and semi-metallic graphene (G) monolayers based on state-of-the-art theoretical calculations. Our results show that both monolayers well preserve their intrinsic features and possess an n-type near Ohmic Schottky contact with a low Schottky barrier height of 0.085 eV for the electrons at the vertical interface. The electronic band alignment suggests a negative band bending of -1.47 eV at the lateral interface, implying electrons as the major transport carriers. Moreover, the transmission gap closely mirrors the heterojunction's band gap, indicating a subtle yet profound interaction between graphene and penta-PdPSe monolayers, which leads to enhanced optical absorption coefficient reaching 106 cm-1 and strong conductivity spanning the visible to ultraviolet region. In addition, our study demonstrates the ability to modify the penta-PdPSe/G heterojunction interface, switching between p-type as well as Ohmic contacts by applying external electric fields. These properties render the penta-PdPSe/G heterojunction promising for optoelectronic applications.

Strain-induced effects on the optoelectronic properties of ZrSe2/HfSe2 heterostructures

CONTEXT

Two-dimensional semiconductor materials have received much attention in recent years due to their wide variety of applications in the field of nano-optoelectronic devices. In this project, we applied stresses ranging from -6 to +6% to the ZrSe2/HfSe2 heterostructure and systematically investigated its electrical and optical properties. It is discovered that stress can effectively modulate the forbidden bandwidth of the ZrSe2/HfSe2 heterojunction; whereas, under compressive stress, the forbidden bandwidth of the material decreases further until the bandgap is zero, leading to the material's transformation from semiconductor to metal. The forbidden band gap of the ZrSe2/HfSe2 heterojunction increases with increasing horizontal biaxial tensile strain. We discovered that the light absorption performance of this heterostructure is significantly better than that of its similar monomolecular layer and that its light absorption intensity can reach an order of magnitude of 104. Under compressive and tensile stresses, the ZrSe2/HfSe2 heterojunctions exhibit different degrees of red or blue shift. The results indicate that constructing ZrSe2/HfSe2 heterojunctions and applying horizontal biaxial stresses to them can significantly modulate the optoelectronic properties of the materials. ZrSe2/HfSe2 heterojunction is a new type of high-performance photogenerated carrier transport device with a wide range of applications.

METHODS

The calculations in this study are carried out the first principles approach of density functional theory, as implemented in the CASTEP module of Materials-Studio2019. The researchers used an ultrasoft reaction potential to calculate the interactions between the ion core and the electrons and applied the Perdew-Burke-Ernzerhof (PBE) and the generalized gradient approximation (GGA) to perform the calculations. The Monkhorst-Pack technique was employed to create the k-point samples utilized for integration on the Brillouin zone, and the k-point grid was uniformly 6 × 6 × 1. In addition, in order to avoid interactions between the atomic layers affecting the properties and stability of the material, such interactions were prevented by adding a 30 Å vacuum layer. Using a plane-wave energy cutoff of 500 eV and the convergence accuracy of the iterative process was set to 1 × 10-5 eV to ensure the accuracy of the computational results, and in addition. The maximum stress in the lattice was limited to less than 0.05 GPa or the interaction force between neighboring atoms was lower than 0.03 eV/Å. For the calculation of the properties of the optical properties, a k-point grid of 18 × 18 × 1 is used for optimization, and the polarization direction of the material is not taken into account, considering that the material is isotropic. This study proposes to apply the Tkatchenko-Scheffler (TS) dispersion correction method in DFT-D to appropriately represent the interlayer van der Waals interaction forces to solve inaccuracies in the computation of van der Waals interactions via density functional theory.

Effect of shear strain on the electronic and optical properties of Al-doped stanane

CONTEXT

The quasi-metallic properties of stanene limit its prospects in optoelectronic devices. Based on first-principles calculations, a systematic study is conducted on the tuning effects of surface hydrogenation and Al atom doping on the electronic and optical properties of stanene. Surface hydrogenation serves as an ideal way to open the forbidden band of stanene, and Al atom doping further increases hydrogenated stanene (stanane) band gap to 0.460 eV. Deformation has a minor impact on the stability of the stanane-Al structure, while shear strain can effectively modulate the band gap engineering of the doped system, reducing the band gap value from 0.460 to 0.170 eV. Deformation induces a redshift in the absorption peak and reflectance, also slowing down the rate of decrease in the absorption coefficient, and enhancing the peak value of light reflectance, which is positively correlated with the degree of shear strain. These findings hold promise for expanding the potential application of monolayer stanane in semiconductor devices.

METHODS

All calculations are performed using CASTEP module in Materials Studio based on the density functional theory (DFT). The Perdew-Burke-Ernzerhof (PBE) generalized gradient approximation (GGA) is employed to describe the exchange-correlation energy (Perdew et al., Phys Rev Lett 77(18), 1996). We construct models for both stanene and stanane. The original unit cell of stanene has two Sn atoms, while stanane consists of two Sn atoms and two H atoms, and expand them to a 3 × 3 × 1 supercell with a vacuum layer of 20 Å in height to prevent interlayer coupling. After convergence testing, the plane-wave cutoff energy is set to 450 eV, and the energy convergence threshold is set to 1 × 10-5 eV. The maximum residual stress for each atom is set to 0.01 eV/Å. Brillouin zone sampling is performed using a 6 × 6 × 1 k-point mesh based on the Monkhorst-Pack method (Monkhorst and Pack, Phys Rev B 13(12), 1976). The k-point accuracy of the density of states and optical properties is 9 × 9 × 1. All calculations are performed using the more advanced OTFG ultrasoft pseudopotential, and structural relaxations are performed using supercells to ensure that the model is fully relaxed. We use the HSE06 functional to calculate the energy band structures of stanane-Al deformed to 0%, 4%, and 8%, resulting in band gap values of 1.465 eV, 1.368 eV, and 1.016 eV, respectively. These values are significantly higher than those obtained using the PBE functional (0.460 eV, 0.397 eV, and 0.170 eV). However, the shapes and trends of the band structures obtained from both PBE and HSE06 calculations are similar. Additionally, the calculation time needed by HSE06 is greatly longer than PBE, which exceeds the capabilities of our computer hardware, and cannot support all subsequent calculations. To investigate the influence of deformations on the variation of band gap values and to conserve computational resources, the subsequent calculations in this study use the PBE functional.

Photoelectric structure and magnetic changes caused by niobium disulfide adsorbing (non)-metal atoms under defects

CONTEXT

The property transition between metal and semiconductor is the key to improving the properties of transition metal dichalcogenides (TMDCs). The adsorption of the NbS₂ compound in the defect state was adjusted for the first time. The hybrid system overwrites the original surface mechanism of NbS₂ and induces indirect band gaps. This modulation mode makes NbS₂ convert into a semiconductor and effectively improves the catalytic activity of the material in the system. In addition, the original local magnetic moment of the compound is concentrated in the vacancy region and is improved. The optical properties of the adsorption system indicate that NbS₂ compounds can be effectively applied in visible and low-frequency ultraviolet regions. This provides a new idea for the design of the NbS₂ compound as a two-dimensional photoelectric material.

METHODS

In the study, we assume that only one atom is adsorbed on the NbS₂ supercell of the defect, and the distance between the two adjacent atoms exceeds 12.74 Å, so the interaction between atoms is ignored in the study. Adsorbed atoms include nonmetallic elements (H, B, C, N, O, F), metallic elements (Fe, Co), and noble metal elements (Pt, Au, Ag). The density functional theory (DFT) was used in the experiment. The non-conservative pseudopotential method was used in the calculation to optimize the crystal structure geometrically. The approximate functional is Heyd-Scuseria-Ernzerhof (HSE06). The calculation method includes the spin-orbit coupling (SOC) effect. The crystal relaxation optimization uses a 7 × 7 × 1 k point grid to calculate niobium disulfide's photoelectric and magnetic properties. A vacuum space of 15Å is introduced in the direction outside the plane, and the free boundary condition is adopted to avoid the interaction between atomic layers. For the convergence parameter setting, the interatomic force of all composite systems is less than 0.03 eV/Å, and the lattice stress is less than 0.05 Gpa.

Reply to the 'Comment on "Two-dimensional penta-like PdPSe with a puckered pentagonal structure: a first-principles study"' by S. Chowdhury, F. Shojaei and B. Mortazavi, Phys. Chem. Chem. Phys., 2023, , DOI: 10.1039/D2CP01587K

We respond to the recent criticism of our paper [Phys. Chem. Chem. Phys., 2022, 24, 9990–9997] and provide further discussion on the analysis of the PdPSe monolayer.

Comment on "Two-dimensional penta-like PdPSe with a puckered pentagonal structure: a first-principles study" by A. Bafekry, M. M. Fadlallah, M. Faraji, A. Shafique, H. R. Jappor, I. Abdolhoseini Sarsari, Y. S. Ang and M. Ghergherehchii, Phys. Chem. Chem. Phys., 2022, , 9990

Recently, Bafekry et al. [Phys. Chem. Chem. Phys., 2022, 24, 9990-9997] presented their density functional theory (DFT) results on the electronic, thermal and dynamical stability, and the elastic, optical and thermoelectric properties of the PdPSe monolayer. The aforementioned theoretical work however includes inaccuracies in the analysis of the electronic band structure, bonding mechanism, thermal stability and phonon dispersion relation of the PdPSe monolayer. We also found noticeable errors in the evaluation of Young's modulus and thermoelectric properties. In contrast with their findings, we show that the PdPSe monolayer shows a rather high Young's modulus and because of its moderate lattice thermal conductivity it cannot be a promising thermoelectric material.

Synergistic effect of alloying on thermoelectric properties of two-dimensional PdPQ (Q = S, Se)

Hosts of 2D materials exist, yet few allow compositional and structural tailoring as the MQ₂ (M = Mo, W; Q = S, Se) family does, for which various structural superlattices have been synthesized. Using thorough first-principles calculations, we show how bonding hierarchy contributes to the structural resilience of 2D PdPQ and allows for full-range alloying of sulfur and selenium. Within the structural unit of Pd₂P₂Q₂, the covalently-bonded [P₂Q₂]^4- polyanions hold the structure together with their molecular-like P-P bonds while ionically bonded Pd-Qs allow the S/Se substitution. Here, the bonding hierarchy imparts superior electronic and structural features to the PdPQ monolayers. As such, the flat-and-dispersive valence band and the eight degenerate valleys of the conduction band benefit the p-type and n-type thermoelectricity of pristine PdPQ, which can be further enhanced by alloying. The high-entropy alloying synergistically suppresses the lattice heat transport from 75 to 30 W m^-1 K^-1 and increases the band degeneracy of PdPQ monolayers, resulting in an overall improvement in zT. Combining these features, in a naïve approach, results in a large zT approaching two for both p-type and n-type doping. However, accurate fully-fledged electron-phonon calculations rebut this promise, showing that at high temperatures, the increased electron scattering results in a stagnant power factor in the flat-and-dispersive valence band. Using a realistic first-principles scattering, we finally calculate the thermoelectric efficiency of PdPQ (Q = S, Se) and highlight the importance of an accurate estimation of electron relaxation time for thermoelectric predictions.

Pentagonal CmXnY6-m-n (m = 2, 3; n = 1, 2; X, Y = B, N, Al, Si, P) Monolayers: Janus Ternaries Combine Omnidirectional Negative Poisson Ratios with Giant Piezoelectric Effects

Two-dimensional (2D) materials composed of pentagon and Janus motifs usually exhibit unique mechanical and electronic properties. In this work, a class of ternary carbon-based 2D materials, C_mX_nY_6-m-n (m = 2, 3; n = 1, 2; X, Y = B, N, Al, Si, P), are systematically studied by first-principles calculations. Six of 21 Janus penta-C_mX_nY_6-m-n monolayers are dynamically and thermally stable. The Janus penta-C₂B₂Al₂ and Janus penta-Si₂C₂N₂ exhibit auxeticity. More strikingly, Janus penta-Si₂C₂N₂ exhibits an omnidirectional negative Poisson ratio (NPR) with values ranging from -0.13 to -0.15; in other words, it is auxetic under stretch in any direction. The calculations of piezoelectricity reveal that the out-of-plane piezoelectric strain coefficient (d₃₂) of Janus panta-C₂B₂Al₂ is up to 0.63 pm/V and increases to 1 pm/V after a strain engineering. These omnidirectional NPR, giant piezoelectric coefficients endow the Janus pentagonal ternary carbon-based monolayers as potential candidates in the future nanoelectronics, especially in the electromechanical devices.

Theoretically proposed stable polymorph of two-dimensional pentagonal β-PdPSe

The theoretical discovery of new and stable 2D penta materials based on first-principles calculations has stimulated technological advances due to the anticipated exotic properties of such structures, which include the α and β phases of penta-NiPS. Inspired by the similarity between the theoretically proposed penta-NiPS and the experimentally synthesized (α phase) of penta-PdPSe, we propose herein the β phase of penta-PdPSe as a new penta-2D material. Comprehensive analyses indicated that β phase penta-PdPSe is thermodynamically, dynamically, mechanically, and thermally stable, similar to its NiPS analogue. It was found that β penta-PdPSe is a wide band gap semiconductor with an indirect band gap of 1.58 eV, significantly lower than 2.15 eV for the α phase. Moreover, the two polymorphs of penta-PdPSe are soft materials with 2D Young's modului of E_a = 151 N m^-1 and E_b = 123 N m^-1 for the β phase, compared with E_a = 155 N m^-1 and E_b = 113 N m^-1 for the α phase. The calculated absorption coefficient showed that β phase penta-PdPSe is acceptable for electronic and optical nanodevices.

Hybrid G/BN@2H-MoS2 Nanomaterial Composites: Structural, Electronic and Molecular Adsorption Properties

Hybrid structures often possess superior properties to those of their component materials. This arises from changes in the structural or physical properties of the new materials. Here, we investigate the structural, electronic, and gas-adsorption properties of hybrid structures made from graphene/hexagonal boron nitride and 2H-molybdenum disulfide (G/BN@MoS₂) monolayers. We consider hybrid systems in which the G/BN patch is at the Mo plane (model I) and the S plane (model II). We find that the implanted hexagon of G or BN in MoS₂ alters its electronic properties: G@MoS₂ (I,II) are metallic, while BN@MoS₂ (I) is an n-type conducting and BN@MoS₂ (II) is semiconducting. We study the molecular adsorption of some diatomic gases (H₂, OH, N₂, NO, CO), triatomic gases (CO₂, NO₂, H₂S, SO₂), and polyatomic gases (COOH, CH₄, and NH₃) on our hybrid structures while considering multiple initial adsorption sites. Our results suggest that the hybrid systems may be suitable materials for some applications: G@MOS₂ (I) for oxygen reduction reactions, BN@MoS₂ (I,II) for NH₃-based hydrogen production, and G@MoS₂ (I) and BN@MoS₂ (I,II) for filtration of No, Co, SO₂, H₂S, and NO₂.

A Hybrid Functional Study on Perovskite-Based Compounds CsPb1-αZnαI3-βXβ (X = Cl or Br)

Inorganic perovskites have attracted a great deal of attention because of their stability. Unfortunately, a weak optical response and the toxicity of lead are hampering their development. Motivated by these facts, we focus herein on the perovskite-based doped series CsPb_1-αZn_αI_3-βX_β (X = Cl or Br). The geometric structures and the electronic and optical properties of CsPb_1-αZn_αI_3-βX_β (X = Cl or Br) are investigated systematically by hybrid functional theory. Analysis of the electronic properties indicates that Zn/Cl/Br mono-doping and co-doping efficiently tune bandgaps. Moreover, we find that the ability to obtain electrons for CsPb_0.625Zn_0.375I₂Cl is superior to the abilities of the others, which implies a stronger electron transition. In addition, CsPb_0.625Zn_0.375I₂Cl and CsPb_0.625Zn_0.375I₂Br show stronger visible-light responses in the range of 467-780 nm. Both CsPb_0.625Zn_0.375I₂Cl and CsPb_0.625Zn_0.375I₂Br are hence good choices for photovoltaic applications. Furthermore, the physically accessible region is also explored herein. These findings shed new light on the design of highly efficient and low-lead perovskite-based optoelectronic materials.