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Jin W, Zhang G, Wu H, Yang L, Zhang W, Chang H. Room-temperature spin-valve devices based on Fe 3GaTe 2/MoS 2/Fe 3GaTe 2 2D van der Waals heterojunctions. NANOSCALE 2023; 15:5371-5378. [PMID: 36820813 DOI: 10.1039/d2nr06886a] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
The spin-valve effect has been the focus of spintronics over the last decades due to its potential for application in many spintronic devices. Two-dimensional (2D) van der Waals (vdW) materials are highly efficient to build spin-valve heterojunctions. However, the Curie temperatures (TC) of the vdW ferromagnetic (FM) 2D crystals are mostly below room temperature (∼30-220 K). It is very challenging to develop room-temperature, FM 2D crystal-based spin-valve devices. Here, we report room-temperature, FM 2D-crystal-based all-2D vdW Fe3GaTe2/MoS2/Fe3GaTe2 spin-valve devices. The magnetoresistance (MR) of the device was up to 15.89% at 2.3 K and 11.97% at 10 K, which are 4-30 times the MR of the spin valves of Fe3GeTe2/MoS2/Fe3GeTe2 and conventional NiFe/MoS2/NiFe. The typical spin valve effect showed strong dependence on the MoS2 spacer thickness in the vdW heterojunction. Importantly, the spin valve effect (0.31%) robustly existed even at 300 K with low working currents down to 10 nA (0.13 A cm-2). This work provides a general vdW platform to develop room-temperature, 2D FM-crystal-based 2D spin-valve devices.
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Affiliation(s)
- Wen Jin
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China.
- Shenzhen R&D Center of Huazhong University of Science and Technology (HUST), Shenzhen 518000, China
| | - Gaojie Zhang
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China.
- Shenzhen R&D Center of Huazhong University of Science and Technology (HUST), Shenzhen 518000, China
| | - Hao Wu
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China.
- Shenzhen R&D Center of Huazhong University of Science and Technology (HUST), Shenzhen 518000, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
- Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Li Yang
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China.
- Shenzhen R&D Center of Huazhong University of Science and Technology (HUST), Shenzhen 518000, China
| | - Wenfeng Zhang
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China.
- Shenzhen R&D Center of Huazhong University of Science and Technology (HUST), Shenzhen 518000, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Haixin Chang
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China.
- Shenzhen R&D Center of Huazhong University of Science and Technology (HUST), Shenzhen 518000, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
- Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China
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Yang H, Wu A, Yi H, Cao W, Yao J, Yang G, Zou YC. Atomic scale insights into the epitaxial growth mechanism of 2D Cr 3Te 4 on mica. NANOSCALE ADVANCES 2023; 5:693-700. [PMID: 36756523 PMCID: PMC9890546 DOI: 10.1039/d2na00835a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/23/2022] [Accepted: 12/08/2022] [Indexed: 06/18/2023]
Abstract
Two-dimensional (2D) magnetic materials are of wide research interest owing to their promising applications in spintronic devices. Among them, chromium chalcogenide compounds are some of the limited available systems that present both high stability in air and high Curie temperatures. Epitaxial growth techniques based on chemical vapour deposition (CVD) have been demonstrated to be a robust method for growing 2D non-layered chromium chalcogenides. However, the growth mechanism is not well-understood. Here, we demonstrate the epitaxial growth of Cr3Te4 nanoplates with high quality on mica. Atomic-resolution scanning transmission electron microscopy (STEM) imaging reveals that the epitaxial growth is based on nanosized chromium oxide seed particles at the interface of Cr3Te4 and mica. The chromium oxide nanoparticle exhibits a coherent interface with both mica and Cr3Te4 with a lattice mismatch within 3%, suggesting that, as a buffer layer, chromium oxide can release the interfacial strain, and induce the growth of Cr3Te4 although there is a distinct oxygen-content difference between mica and Cr3Te4. This work provides an experimental understanding behind the epitaxial growth of 2D magnetic materials at the atomic scale and facilitates the improvement of their growth procedures for devices with high crystalline quality.
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Affiliation(s)
- Hailin Yang
- School of Materials Science & Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, Sun Yat-sen University Guangzhou 510275 P. R. China
| | - An Wu
- School of Materials Science & Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, Sun Yat-sen University Guangzhou 510275 P. R. China
| | - Huaxin Yi
- School of Materials Science & Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, Sun Yat-sen University Guangzhou 510275 P. R. China
| | - Weiwei Cao
- School of Materials Science & Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, Sun Yat-sen University Guangzhou 510275 P. R. China
| | - Jiandong Yao
- School of Materials Science & Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, Sun Yat-sen University Guangzhou 510275 P. R. China
| | - Guowei Yang
- School of Materials Science & Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, Sun Yat-sen University Guangzhou 510275 P. R. China
| | - Yi-Chao Zou
- School of Materials Science & Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, Sun Yat-sen University Guangzhou 510275 P. R. China
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Wu Y, Li J, Liu Y. Two-dimensional chalcogenide-based ferromagnetic semiconductors. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 35:083002. [PMID: 36540916 DOI: 10.1088/1361-648x/acaa7e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2022] [Accepted: 12/09/2022] [Indexed: 06/17/2023]
Abstract
Two-dimensional (2D) magnetic materials draw an enormous amount of attention due to their novel physical properties and potential spintronics device applications. Room-temperature ferromagnetic (FM) semiconductors have long been pursued in 2D magnetic materials, which show a long range magnetic order down to atomic-layer thickness. The intrinsic ferromagnetism has been predicted in a series of 2D materials and verified in experiments and the magnetism can be modulated by multiple physical fields, exhibiting promising application prospects. In this review, we overview several types of 2D chalcogenide-based FM semiconductors discovered in recent years. We summary and compare their basic physical properties, including the crystal structures, electronic structures, and mechanical stability. The 2D magnetism can be described by several physical models. We also focus on the recent progresses about theoretical prediction of FM semiconductors and experimental observation of external-field regulation. Most of investigations have shown that 2D chalcogenide-based FM semiconductors have relatively high Curie temperature (Tc) and structural stability. These materials are promising to realize the room-temperature ferromagnetism in atomic-layer thickness, which is significant to design spintronics devices.
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Affiliation(s)
- Yanling Wu
- State Key Laboratory of Metastable Materials Science and Technology & Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, People's Republic of China
| | - Jun Li
- State Key Laboratory of Metastable Materials Science and Technology & Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, People's Republic of China
| | - Yong Liu
- State Key Laboratory of Metastable Materials Science and Technology & Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, People's Republic of China
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Strain-Modulated Magnetism in MoS2. NANOMATERIALS 2022; 12:nano12111929. [PMID: 35683784 PMCID: PMC9182138 DOI: 10.3390/nano12111929] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/22/2022] [Revised: 05/26/2022] [Accepted: 06/01/2022] [Indexed: 11/16/2022]
Abstract
Since the experiments found that two-dimensional (2D) materials such as single-layer MoS2 can withstand up to 20% strain, strain-modulated magnetism has gradually become an emerging research field. However, applying strain alone is difficult to modulate the magnetism of single-layer pristine MoS2, but applying strain combined with other tuning techniques such as introducing defects makes it easier to produce and alter the magnetism in MoS2. Here, we summarize the recent progress of strain-dependent magnetism in MoS2. First, we review the progress in theoretical study. Then, we compare the experimental methods of applying strain and their effects on magnetism. Specifically, we emphasize the roles played by web buckles, which induce biaxial tensile strain conveniently. Despite some progress, the study of strain-dependent MoS2 magnetism is still in its infancy, and a few potential directions for future research are discussed at the end. Overall, a broad and in-depth understanding of strain-tunable magnetism is very necessary, which will further drive the development of spintronics, straintronics, and flexible electronics.
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Tsai Y, Li Z, Hu S. Recent Progress of Atomic Layer Technology in Spintronics: Mechanism, Materials and Prospects. NANOMATERIALS 2022; 12:nano12040661. [PMID: 35214988 PMCID: PMC8880290 DOI: 10.3390/nano12040661] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/23/2021] [Revised: 02/10/2022] [Accepted: 02/13/2022] [Indexed: 12/16/2022]
Abstract
The atomic layer technique is generating a lot of excitement and study due to its profound physics and enormous potential in device fabrication. This article reviews current developments in atomic layer technology for spintronics, including atomic layer deposition (ALD) and atomic layer etching (ALE). To begin, we introduce the main atomic layer deposition techniques. Then, in a brief review, we discuss ALE technology for insulators, semiconductors, metals, and newly created two-dimensional van der Waals materials. Additionally, we compare the critical factors learned from ALD to constructing ALE technology. Finally, we discuss the future prospects and challenges of atomic layer technology in the field of spinronics.
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Di B, Zhang P, Yin H, Han P, Wu H, Zhang G, Jin W, Wen X, Zhang W, Chang H. Highly-tunable ferromagnetism in Cr-doped layered van der Waals NiTe 2 crystals with high air stability. CrystEngComm 2022. [DOI: 10.1039/d2ce00734g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
In the present work, tunable ferromagnetism can be introduced in NiTe2 crystals by Cr doping with high air-stability.
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Affiliation(s)
- Boyuan Di
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Pengzhen Zhang
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Hongfei Yin
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Peng Han
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Hao Wu
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Gaojie Zhang
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Wen Jin
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Xiaokun Wen
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Wenfeng Zhang
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Haixin Chang
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
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