1
|
Pace G, Del Rio Castillo AE, Lamperti A, Lauciello S, Bonaccorso F. 2D Materials-based Electrochemical Triboelectric Nanogenerators. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2211037. [PMID: 36994787 DOI: 10.1002/adma.202211037] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/26/2022] [Revised: 03/12/2023] [Indexed: 05/17/2023]
Abstract
The integration of 2D materials in triboelectric nanogenerators (TENGs) is known to increase the mechanical-to-electrical power conversion efficiency. 2D materials are used in TENGs with multiple roles as triboelectric material, charge-trapping fillers, or as electrodes. Here, novel TENGs based on few-layers graphene (FLG) electrodes and stable gel electrolytes composed of liquid phase exfoliated 2D-transition metal dichalcogenides and polyvinyl alcohol are developed. TENGs embedding FLG and gel composites show competitive open-circuit voltage (≈ 300 V), instant peak power (530 mW m-2 ), and stability (> 11 months). These values correspond to a seven-fold higher electrical output compared to TENGs embedding bare FLG electrodes. It is demonstrated that such a significant improvement depends on the high electrical double-layer capacitance (EDLC) of FLG electrodes functionalized with the gel composites. The wet encapsulation of the TENGs is shown to be an effective strategy to increase their power output further highlighting the EDLC role. It is also shown that the EDLC is dependent upon the transition metal (W vs Mo) rather than the relative abundance of 1T or 2H phases. Overall, this work lays down the roots for novel sustainable electrochemical-(e)-TENGs developed exploiting strategies typically used in electrochemical capacitors.
Collapse
Affiliation(s)
- Giuseppina Pace
- Institute for Microelectronics and Microsystems - National Research Council (IMM-CNR), Via C. Olivetti 2, Agrate, Milan, 20864, Italy
- Fondazione Istituto Italiano di Tecnologia (IIT), Via Morego, 30, Genova, 16136, Italy
| | | | - Alessio Lamperti
- Institute for Microelectronics and Microsystems - National Research Council (IMM-CNR), Via C. Olivetti 2, Agrate, Milan, 20864, Italy
| | - Simone Lauciello
- Fondazione Istituto Italiano di Tecnologia (IIT), Via Morego, 30, Genova, 16136, Italy
| | - Francesco Bonaccorso
- Fondazione Istituto Italiano di Tecnologia (IIT), Via Morego, 30, Genova, 16136, Italy
- BeDimensional S.p.A, Via Lungotorrente Secca 30R, Genova, 16163, Italy
| |
Collapse
|
2
|
Hesp NCH, Svendsen MK, Watanabe K, Taniguchi T, Thygesen KS, Torre I, Koppens FHL. WSe 2 as Transparent Top Gate for Infrared Near-Field Microscopy. NANO LETTERS 2022; 22:6200-6206. [PMID: 35872651 DOI: 10.1021/acs.nanolett.2c01658] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Independent control of carrier density and out-of-plane displacement field is essential for accessing novel phenomena in two-dimensional (2D) material heterostructures. While this is achieved with independent top and bottom metallic gate electrodes in transport experiments, it remains a challenge for near-field optical studies as the top electrode interferes with the optical path. Here, we characterize the requirements for a material to be used as the top-gate electrode and demonstrate experimentally that few-layer WSe2 can be used as a transparent, ambipolar top-gate electrode in infrared near-field microscopy. We carry out nanoimaging of plasmons in a bilayer graphene heterostructure tuning the plasmon wavelength using a trilayer WSe2 gate, achieving a density modulation amplitude exceeding 2 × 1012 cm-2. The observed ambipolar gate-voltage response allows us to extract the energy gap of WSe2, yielding a value of 1.05 eV. Our results provide an additional tuning knob to cryogenic near-field experiments on emerging phenomena in 2D materials and moiré heterostructures.
Collapse
Affiliation(s)
- Niels C H Hesp
- ICFO-Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, Av. Carl Friedrich Gauss 3, 08860 Castelldefels, Barcelona, Spain
| | - Mark Kamper Svendsen
- CAMD, Computational Atomic-Scale Materials Design, Department of Physics, Technical University of Denmark, DK-2800 Kongens Lyngby, Denmark
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kristian S Thygesen
- CAMD, Computational Atomic-Scale Materials Design, Department of Physics, Technical University of Denmark, DK-2800 Kongens Lyngby, Denmark
- Center for Nanostructured Graphene (CNG), Department of Physics, Technical University of Denmark, DK-2800 Kongens Lyngby, Denmark
| | - Iacopo Torre
- ICFO-Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, Av. Carl Friedrich Gauss 3, 08860 Castelldefels, Barcelona, Spain
| | - Frank H L Koppens
- ICFO-Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, Av. Carl Friedrich Gauss 3, 08860 Castelldefels, Barcelona, Spain
- ICREA-Institució Catalana de Recerca i Estudis Avançats, 08010 Barcelona, Spain
| |
Collapse
|