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Emelianov AV, Pettersson M, Bobrinetskiy II. Ultrafast Laser Processing of 2D Materials: Novel Routes to Advanced Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2402907. [PMID: 38757602 DOI: 10.1002/adma.202402907] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/26/2024] [Revised: 04/23/2024] [Indexed: 05/18/2024]
Abstract
Ultrafast laser processing has emerged as a versatile technique for modifying materials and introducing novel functionalities. Over the past decade, this method has demonstrated remarkable advantages in the manipulation of 2D layered materials, including synthesis, structuring, functionalization, and local patterning. Unlike continuous-wave and long-pulsed optical methods, ultrafast lasers offer a solution for thermal heating issues. Nonlinear interactions between ultrafast laser pulses and the atomic lattice of 2D materials substantially influence their chemical and physical properties. This paper highlights the transformative role of ultrafast laser pulses in maskless green technology, enabling subtractive, and additive processes that unveil ways for advanced devices. Utilizing the synergetic effect between the energy states within the atomic layers and ultrafast laser irradiation, it is feasible to achieve unprecedented resolutions down to several nanometers. Recent advancements are discussed in functionalization, doping, atomic reconstruction, phase transformation, and 2D and 3D micro- and nanopatterning. A forward-looking perspective on a wide array of applications of 2D materials, along with device fabrication featuring novel physical and chemical properties through direct ultrafast laser writing, is also provided.
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Affiliation(s)
- Aleksei V Emelianov
- Nanoscience Center, Department of Chemistry, University of Jyväskylä, Jyväskylä, FI-40014, Finland
| | - Mika Pettersson
- Nanoscience Center, Department of Chemistry, University of Jyväskylä, Jyväskylä, FI-40014, Finland
| | - Ivan I Bobrinetskiy
- BioSense Institute - Research and Development Institute for Information Technologies in Biosystems, University of Novi Sad, Novi Sad, 21000, Serbia
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Yang H, Luo R, Shi K, Li J, Xu M, Chu X, Zhai Y, Qu G, Fang X. Pollution-free interface of 2D-MoS 2/1D-CuO vdWs heterojunction for high-performance photodetector. NANOTECHNOLOGY 2023; 35:105202. [PMID: 37848020 DOI: 10.1088/1361-6528/ad0411] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/26/2023] [Accepted: 10/16/2023] [Indexed: 10/19/2023]
Abstract
Van der Waals heterostructures provide a new opportunity for constructing new structures and improving the performance of electronic and optoelectronic devices. However, the existing methods of constructing heterojunctions are still faced with problems such as impurity introduction, or complex preparation process and limited scope of application. Herein, a physisorption method is proposed to composite CuO nanorods on the surface of MoS2nanosheets. CuO nanorods and MoS2form type-Ⅱ heterojunctions, which promotes the separation and transport of photo-generated charge carriers. More importantly, compared with the transfer and coating methods, the physical adsorption method avoids the introduction of auxiliary materials during the whole process of constructing the heterojunction, and therefore effectively reduces the damage and pollution at the interface. The optimized MoS2/CuO heterojunction photodetector achieves a high photoresponsivity of ∼680.1 A W-1and a fast response speed of ∼29μs. The results demonstrate that the physisorption method provides a feasible approach to realize high performance photodetectors with pollution-free interfaces, and it can also be extended to the development of other low-dimensional hybrid heterojunction electronic and optoelectronic devices.
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Affiliation(s)
- Hui Yang
- School of Physics, Changchun University of Science and Technology, Changchun, Jilin 130022, People's Republic of China
| | - Ruiqin Luo
- School of Materials Science and Engineering, Heilongjiang University of Science and Technology, Harbin, Heilongjiang 150027, People's Republic of China
| | - Kaixi Shi
- School of Physics, Changchun University of Science and Technology, Changchun, Jilin 130022, People's Republic of China
| | - Jinhua Li
- School of Physics, Changchun University of Science and Technology, Changchun, Jilin 130022, People's Republic of China
| | - Mingze Xu
- School of Physics, Changchun University of Science and Technology, Changchun, Jilin 130022, People's Republic of China
| | - Xueying Chu
- School of Physics, Changchun University of Science and Technology, Changchun, Jilin 130022, People's Republic of China
| | - Yingjiao Zhai
- School of Physics, Changchun University of Science and Technology, Changchun, Jilin 130022, People's Republic of China
| | - Guannan Qu
- School of Physics, Changchun University of Science and Technology, Changchun, Jilin 130022, People's Republic of China
| | - Xuan Fang
- State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, Changchun, Jilin 130022, People's Republic of China
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Sun T, Feng B, Huo J, Xiao Y, Wang W, Peng J, Li Z, Du C, Wang W, Zou G, Liu L. Artificial Intelligence Meets Flexible Sensors: Emerging Smart Flexible Sensing Systems Driven by Machine Learning and Artificial Synapses. NANO-MICRO LETTERS 2023; 16:14. [PMID: 37955844 PMCID: PMC10643743 DOI: 10.1007/s40820-023-01235-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/26/2023] [Accepted: 09/24/2023] [Indexed: 11/14/2023]
Abstract
The recent wave of the artificial intelligence (AI) revolution has aroused unprecedented interest in the intelligentialize of human society. As an essential component that bridges the physical world and digital signals, flexible sensors are evolving from a single sensing element to a smarter system, which is capable of highly efficient acquisition, analysis, and even perception of vast, multifaceted data. While challenging from a manual perspective, the development of intelligent flexible sensing has been remarkably facilitated owing to the rapid advances of brain-inspired AI innovations from both the algorithm (machine learning) and the framework (artificial synapses) level. This review presents the recent progress of the emerging AI-driven, intelligent flexible sensing systems. The basic concept of machine learning and artificial synapses are introduced. The new enabling features induced by the fusion of AI and flexible sensing are comprehensively reviewed, which significantly advances the applications such as flexible sensory systems, soft/humanoid robotics, and human activity monitoring. As two of the most profound innovations in the twenty-first century, the deep incorporation of flexible sensing and AI technology holds tremendous potential for creating a smarter world for human beings.
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Affiliation(s)
- Tianming Sun
- Department of Mechanical Engineering, State Key Laboratory of Tribology in Advanced Equipment, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing, 100084, People's Republic of China
- College of Materials Science and Engineering, Shanxi Province, Taiyuan University of Technology, Taiyuan, 030024, People's Republic of China
| | - Bin Feng
- Department of Mechanical Engineering, State Key Laboratory of Tribology in Advanced Equipment, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing, 100084, People's Republic of China
| | - Jinpeng Huo
- Department of Mechanical Engineering, State Key Laboratory of Tribology in Advanced Equipment, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing, 100084, People's Republic of China
| | - Yu Xiao
- Department of Mechanical Engineering, State Key Laboratory of Tribology in Advanced Equipment, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing, 100084, People's Republic of China
| | - Wengan Wang
- Department of Mechanical Engineering, State Key Laboratory of Tribology in Advanced Equipment, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing, 100084, People's Republic of China
| | - Jin Peng
- Department of Mechanical Engineering, State Key Laboratory of Tribology in Advanced Equipment, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing, 100084, People's Republic of China
| | - Zehua Li
- Department of Mechanical Engineering, State Key Laboratory of Tribology in Advanced Equipment, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing, 100084, People's Republic of China
| | - Chengjie Du
- Department of Mechanical Engineering, State Key Laboratory of Tribology in Advanced Equipment, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing, 100084, People's Republic of China
| | - Wenxian Wang
- College of Materials Science and Engineering, Shanxi Province, Taiyuan University of Technology, Taiyuan, 030024, People's Republic of China.
| | - Guisheng Zou
- Department of Mechanical Engineering, State Key Laboratory of Tribology in Advanced Equipment, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing, 100084, People's Republic of China.
| | - Lei Liu
- Department of Mechanical Engineering, State Key Laboratory of Tribology in Advanced Equipment, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing, 100084, People's Republic of China.
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Hu H, Zhen W, Yue Z, Niu R, Xu F, Zhu W, Jiao K, Long M, Xi C, Zhu W, Zhang C. A mixed-dimensional quasi-1D BiSeI nanowire-2D GaSe nanosheet p-n heterojunction for fast response optoelectronic devices. NANOSCALE ADVANCES 2023; 5:6210-6215. [PMID: 37941949 PMCID: PMC10629003 DOI: 10.1039/d3na00525a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/14/2023] [Accepted: 10/05/2023] [Indexed: 11/10/2023]
Abstract
Due to the unique combination configuration and the formation of a built-in electric field, mixed-dimensional heterojunctions present fruitful possibilities for improving the optoelectronic performances of low-dimensional optoelectronic devices. However, the response times of most photodetectors built from mixed-dimensional heterojunctions are within the millisecond range, limiting their applications in fast response optoelectronic devices. Herein, a mixed-dimensional BiSeI/GaSe van der Waals heterostructure is designed, which exhibits visible light detection ability and competitive photoresponsivity of 750 A W-1 and specific detectivity of 2.25 × 1012 Jones under 520 nm laser excitation. Excitingly, the device displays a very fast response time, e.g., the rise time and decay time under 520 nm laser excitation are 65 μs and 190 μs, respectively. Our findings provide a prospective approach to mixed-dimensional heterojunction photodetection devices with rapid switching capabilities.
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Affiliation(s)
- Huijie Hu
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
- Science Island Branch of Graduate School, University of Science and Technology of China Hefei 230026 China
| | - Weili Zhen
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
| | - Zhilai Yue
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
| | - Rui Niu
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
| | - Feng Xu
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
| | - Wanli Zhu
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
| | - Keke Jiao
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
| | - Mingsheng Long
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University Hefei 230601 China
| | - Chuanying Xi
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
| | - Wenka Zhu
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
| | - Changjin Zhang
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University Hefei 230601 China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University Nanjing 210093 China
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