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Vekovshinin YE, Bondarenko LV, Tupchaya AY, Mihalyuk AN, Denisov NV, Gruznev DV, Zotov AV, Saranin AA. Lifshitz Transition in a Single-Atom-Thick Gd xYb 1-xPb 3 Kagome Compound on Si(111). NANO LETTERS 2024; 24:9931-9936. [PMID: 39101965 DOI: 10.1021/acs.nanolett.4c02420] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/06/2024]
Abstract
Lanthanide (Ln) elements Gd and Yb alloyed with a Pb monolayer on the Si(111) substrate form LnPb3 compounds having the same crystal structure. They comprise a single-atom-thick Pb layer arranged in a slightly distorted kagome lattice with Ln atoms filling the hexagonal voids. They have similar electronic band structures except for the Fermi level position, which varies between the divalent Yb- and trivalent Gd-containing compounds by ∼0.47 eV. The ability to create a 2D solid solution with the unified continuous Pb layer and hexagonal voids randomly filled with either Gd or Yb atoms allows precise control of the Fermi level position. Small alteration of the Fermi level triggers drastic changes in the Fermi surface topology due to the Lifshitz transition, hence in the physical properties. In particular, the sheet resistance of the GdxYb1-xPb3/Si(111) system can be controllably varied over an order of magnitude range.
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Affiliation(s)
- Yuriy E Vekovshinin
- Institute of Automation and Control Processes FEB RAS, 690041 Vladivostok, Russia
| | - Leonid V Bondarenko
- Institute of Automation and Control Processes FEB RAS, 690041 Vladivostok, Russia
| | - Alexandra Y Tupchaya
- Institute of Automation and Control Processes FEB RAS, 690041 Vladivostok, Russia
| | - Alexey N Mihalyuk
- Institute of Automation and Control Processes FEB RAS, 690041 Vladivostok, Russia
- Institute of High Technologies and Advanced Materials, Far Eastern Federal University, 690950 Vladivostok, Russia
| | - Nikita V Denisov
- Institute of Automation and Control Processes FEB RAS, 690041 Vladivostok, Russia
| | - Dimitry V Gruznev
- Institute of Automation and Control Processes FEB RAS, 690041 Vladivostok, Russia
| | - Andrey V Zotov
- Institute of Automation and Control Processes FEB RAS, 690041 Vladivostok, Russia
| | - Alexander A Saranin
- Institute of Automation and Control Processes FEB RAS, 690041 Vladivostok, Russia
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Mihalyuk AN, Bondarenko LV, Tupchaya AY, Gruznev DV, Solovova NY, Golyashov VA, Tereshchenko OE, Okuda T, Kimura A, Eremeev SV, Zotov AV, Saranin AA. Emergence of quasi-1D spin-polarized states in ultrathin Bi films on InAs(111)A for spintronics applications. NANOSCALE 2024; 16:1272-1281. [PMID: 38126765 DOI: 10.1039/d3nr03830k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/23/2023]
Abstract
The discovery, characterization, and control of heavy-fermion low-dimensional materials are central to nanoscience since quantum phenomena acquire an exotic and highly tunable character. In this work, through a variety of comprehensive experimental and theoretical techniques, it was observed and predicted that the synthesis of ultrathin Bi films on the InAs(111)A surface produces quasi-one-dimensional spin-polarized states, providing a platform for the realization of a unique spin-transport regime in the system. Scanning tunneling microscopy and low-energy electron diffraction measurements revealed that the InAs(111)A substrate facilitates the formation of the Bi-dimer phase of 2√3 × 3 periodicity with an admixture of the Bi-bilayer phase under submonolayer Bi deposition. X-ray photoelectron spectroscopy (XPS) measurements have shown the chemical stability of the Bi-induced phases, while spin and angle resolved photoemission spectroscopy (SARPES) observations combined with state-of-the-art DFT calculations have revealed that the electronic spectrum of the Bi-dimer phase holds a quasi-1D hole-like spin-split state at the Fermi level with advanced spin texture, whereas the Bi-bilayer phase demonstrates metallic states with large Rashba spin-splitting. The band structure of the Bi/InAs(111)A interface is discovered to hold great potential as a high-performance spintronics material fabricated in the ultimate two-dimensional limit.
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Affiliation(s)
- Alexey N Mihalyuk
- Institute of High Technologies and Advanced Materials, Far Eastern Federal University, 690950 Vladivostok, Russia.
- Institute of Automation and Control Processes FEB RAS, 690041 Vladivostok, Russia
| | - Leonid V Bondarenko
- Institute of Automation and Control Processes FEB RAS, 690041 Vladivostok, Russia
| | - Alexandra Y Tupchaya
- Institute of Automation and Control Processes FEB RAS, 690041 Vladivostok, Russia
| | - Dimitry V Gruznev
- Institute of Automation and Control Processes FEB RAS, 690041 Vladivostok, Russia
| | | | - Vladimir A Golyashov
- Novosibirsk State University, 630090 Novosibirsk, Russia
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090 Novosibirsk, Russia
| | - Oleg E Tereshchenko
- Novosibirsk State University, 630090 Novosibirsk, Russia
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090 Novosibirsk, Russia
| | - Taichi Okuda
- Hiroshima Synchrotron Radiation Center (HSRC), Hiroshima University, 2-313 Kagamiyama, Higashi-Hiroshima 739-0046, Japan
| | - Akio Kimura
- Hiroshima Synchrotron Radiation Center (HSRC), Hiroshima University, 2-313 Kagamiyama, Higashi-Hiroshima 739-0046, Japan
- International Institute for Sustainability with Knotted Chiral Meta Matter (SKCM2), 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8526, Japan
- Graduate School of Advanced Science and Engineering, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8526, Japan
| | - Sergey V Eremeev
- Institute of Strength Physics and Materials Science, Tomsk 634055, Russia
| | - Andrey V Zotov
- Institute of Automation and Control Processes FEB RAS, 690041 Vladivostok, Russia
| | - Alexander A Saranin
- Institute of Automation and Control Processes FEB RAS, 690041 Vladivostok, Russia
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Nakamura T, Sugihara H, Chen Y, Yukawa R, Ohtsubo Y, Tanaka K, Kitamura M, Kumigashira H, Kimura SI. Two-dimensional heavy fermion in a monoatomic-layer Kondo lattice YbCu 2. Nat Commun 2023; 14:7850. [PMID: 38040781 PMCID: PMC10692116 DOI: 10.1038/s41467-023-43662-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/21/2023] [Accepted: 11/16/2023] [Indexed: 12/03/2023] Open
Abstract
The Kondo effect between localized f-electrons and conductive carriers leads to exotic physical phenomena. Among them, heavy-fermion (HF) systems, in which massive effective carriers appear due to the Kondo effect, have fascinated many researchers. Dimensionality is also an important characteristic of the HF system, especially because it is strongly related to quantum criticality. However, the realization of the perfect two-dimensional (2D) HF materials is still a challenging topic. Here, we report the surface electronic structure of the monoatomic-layer Kondo lattice YbCu2 on a Cu(111) surface observed by synchrotron-based angle-resolved photoemission spectroscopy. The 2D conducting band and the Yb 4f state, located very close to the Fermi level, are observed. These bands are hybridized at low-temperature, forming the 2D HF state, with an evaluated coherence temperature of about 30 K. The effective mass of the 2D state is enhanced by a factor of 100 by the development of the HF state. Furthermore, clear evidence of the hybridization gap formation in the temperature dependence of the Kondo-resonance peak has been observed below the coherence temperature. Our study provides a new candidate as an ideal 2D HF material for understanding the Kondo effect at low dimensions.
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Affiliation(s)
- Takuto Nakamura
- Graduate School of Frontier Biosciences, Osaka University, Suita, 565-0871, Japan.
- Department of Physics, Graduate School of Science, Osaka University, Toyonaka, 560-0043, Japan.
| | - Hiroki Sugihara
- Department of Physics, Graduate School of Science, Osaka University, Toyonaka, 560-0043, Japan
| | - Yitong Chen
- Department of Physics, Graduate School of Science, Osaka University, Toyonaka, 560-0043, Japan
| | - Ryu Yukawa
- Graduate School of Engineering, Osaka University, Suita, 565-0871, Japan
| | - Yoshiyuki Ohtsubo
- National Institutes for Quantum Science and Technology, Sendai, 980-8579, Japan
| | | | - Miho Kitamura
- Photon Factory, Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba, 305-0801, Japan
| | - Hiroshi Kumigashira
- Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, Sendai, 980-8577, Japan
| | - Shin-Ichi Kimura
- Graduate School of Frontier Biosciences, Osaka University, Suita, 565-0871, Japan.
- Department of Physics, Graduate School of Science, Osaka University, Toyonaka, 560-0043, Japan.
- Institute for Molecular Science, Okazaki, 444-8585, Japan.
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