Boron-rich hybrid BCN nanoribbons for highly ambient uptake of H2S, HF, NH3, CO, CO2 toxic gases

Atomic insights into the interaction of N2, CO2, NH3, NO, and NO2 gas molecules with Zn2(V, Nb, Ta)N3 ternary nitride monolayers

The search for promising carrier blocking layer materials with high stability, including resistance to surface inhibition by environmental molecules that cause a drop in carrier mobility, is critical for the production of tandem solar cells. Based on density functional theory calculations, the reaction of atmospheric gases, including N2, CO2, NH3, NO, and NO2, with three promising Zn2(V, Nb, Ta)N3 monolayers is discovered. The results suggest the chemical adsorption of NH3 and physical adsorption of NO and NO2. In addition, the Zn2(V, Nb, Ta)N3 monolayers are characterized by a weak bonding with N2 and CO2. Charge redistribution is found at the interface between the monolayers and NH3, NO and NO2 molecules, leading to the formation of a local surface dipole that affects the functionality of the Zn2(V, Nb, Ta)N3 monolayers. The Zn2VN3 monolayer is less reactive with atmospheric gases and thus is the most promising for application in tandem solar cells. Notably, the revealed nontrivial behavior of the Zn2(V, Nb, Ta)N3 monolayers towards N-containing gases makes them promising for application in gas sensing. Specifically, the Zn2TaN3 monolayer is the most promising for application in molecular sensing due to its high reversibility and distinguished interaction with NH3, NO, and NO2 gases.

Optical and electronic properties of BCN films deposited by magnetron sputtering

Boron carbonitride (BCN) films containing hybridized bonds involving B, C, and N over wide compositional ranges enable an abundant variety of new materials, properties, and applications; however, their electronic performance is still limited by the presence of structural and electronic defects, yielding sluggish mobility and electrical conductivity. This work reports on mechanically stable BCN films and their corresponding optical and electronic properties. The ternary BCN films consisting of hybridized B-C-N bonds have been achieved by varying N2 flow by the radio frequency magnetron sputtering method. The BCN films show a bandgap value ranging from 3.32 to 3.82 eV. Hall effect measurements reveal an n-type conductivity with an improved hall mobility of 226 cm2/V s at room temperature for the optimal film. The n-BCN/p-Si heterojunctions exhibit a nonlinear rectifying characteristic, where the tunneling behavior dominates the injection regimes due to the density of defects, i.e., structural disorder and impurities. Our work demonstrates the tunable electrical properties of BCN/Si p-n diodes and, thus, is beneficial for the potential application in the fields of optics, optoelectronics, and electrics.