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Citation(s) in RCA

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Number Cited by Other Article(s)
1
Gallas B, Berbezier I, Chevrier J, Derrien J. Gallium-mediated homoepitaxial growth of silicon at low temperatures. PHYSICAL REVIEW. B, CONDENSED MATTER 1996;54:4919-4925. [PMID: 9986454 DOI: 10.1103/physrevb.54.4919] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
2
Latyshev AV, Krasilnikov AB, Aseev AL. Self-diffusion on Si(111) surfaces. PHYSICAL REVIEW. B, CONDENSED MATTER 1996;54:2586-2589. [PMID: 9986107 DOI: 10.1103/physrevb.54.2586] [Citation(s) in RCA: 18] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
3
Kodiyalam S, Khor KE, Sarma SD. Calculated Schwoebel barriers on Si(111) steps using an empirical potential. PHYSICAL REVIEW. B, CONDENSED MATTER 1996;53:9913-9922. [PMID: 9982555 DOI: 10.1103/physrevb.53.9913] [Citation(s) in RCA: 15] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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