Secondary oxidation product on Si(111)-(7 x 7) characterized by isotope-labeled vibrational spectroscopy

Atomic Point Contact Raman Spectroscopy of a Si(111)-7 × 7 Surface

Tip-enhanced Raman scattering (TERS) has recently demonstrated the exceptional sensitivity to observe vibrational structures on the atomic scale. However, it strongly relies on electromagnetic enhancement in plasmonic nanogaps. Here, we demonstrate that atomic point contact (APC) formation between a plasmonic tip and the surface of a bulk Si sample can lead to a dramatic enhancement of Raman scattering and consequently the phonons of the reconstructed Si(111)-7 × 7 surface can be detected. Furthermore, we demonstrate the chemical sensitivity of APC-TERS by probing local vibrations resulting from Si-O bonds on the partially oxidized Si(111)-7 × 7 surface. This approach will expand the applicability of ultrasensitive TERS, exceeding the previous measurement strategies that exploit intense gap-mode plasmons, typically requiring a plasmonic substrate.

Adsorption and dissociation of oxygen molecules on Si(111)-(7×7) surface

The adsorption and dissociation of O2 molecules on Si(111)-(7×7) surface have been studied by first-principles calculations. Our results show that all the O2 molecular species adsorbed on Si(111)-(7×7) surface are unstable and dissociate into atomic species with a small energy barrier about 0.1 eV. The single O2 molecule adsorption tends to form an ins×2 or a new metastable ins×2* structure on the Si adatom sites and the further coming O2 molecules adsorb on those structures to produce an ad-ins×3 structure. The ad-ins×3 structure is indeed highly stable and kinetically limited for diving into the subsurface layer to form the ins×3-tri structure by a large barrier of 1.3 eV. Unlike the previous views, we find that all the ad-ins, ins×2, and ad-ins×3 structures show bright images, while the ins×2*, ins×3, and ins×3-tri structures show dark images. The proposed oxidation pathways and simulated scanning tunneling microscope images account well for the experimental results and resolve the long-standing confusion and issue about the adsorption and reaction of O2 molecules on Si(111) surface.

Site-specific evolution of surface stress during the room-temperature oxidation of the Si(111)-(7 x 7) surface

The reaction of molecular oxygen with the Si(111)-7 x 7 surface is investigated at room temperature using in situ scanning tunneling microscopy and surface stress measurements to reveal the quantitative relationship between site-specific oxygen coverage and a decrease in tensile surface stress. This relationship is described using a modified form of the reaction model originally proposed by Dujardin et al. We show that the decrease in tensile surface stress is greatest for the faulted subunits of the 7 x 7 cell and determine the stress signatures of different reaction products, including the absence of long-lived metastable species with a unique stress signature.