High-intensity xenon plasma discharge lamp for bulk-sensitive high-resolution photoemission spectroscopy

New developments in laser-based photoemission spectroscopy and its scientific applications: a key issues review

The significant progress in angle-resolved photoemission spectroscopy (ARPES) in last three decades has elevated it from a traditional band mapping tool to a precise probe of many-body interactions and dynamics of quasiparticles in complex quantum systems. The recent developments of deep ultraviolet (DUV, including ultraviolet and vacuum ultraviolet) laser-based ARPES have further pushed this technique to a new level. In this paper, we review some latest developments in DUV laser-based photoemission systems, including the super-high energy and momentum resolution ARPES, the spin-resolved ARPES, the time-of-flight ARPES, and the time-resolved ARPES. We also highlight some scientific applications in the study of electronic structure in unconventional superconductors and topological materials using these state-of-the-art DUV laser-based ARPES. Finally we provide our perspectives on the future directions in the development of laser-based photoemission systems.

Ultrathin Bismuth Film on 1T-TaS2: Structural Transition and Charge-Density-Wave Proximity Effect

We have fabricated bismuth (Bi) ultrathin films on a charge-density-wave (CDW) compound 1T-TaS₂ and elucidated electronic states by angle-resolved photoemission spectroscopy and first-principles band-structure calculations. We found that the Bi film on 1T-TaS₂ undergoes a structural transition from (111) to (110) upon reducing the film thickness, accompanied by a drastic change in the energy band structure. We also revealed that while two-bilayer-thick Bi(110) film on Si(111) is characterized by a dispersive band touching the Fermi level ( E_F), the energy band of the same film on 1T-TaS₂ exhibits holelike dispersion with a finite energy gap at E_F. We discuss the origin of such intriguing differences in terms of the CDW proximity effect.

Band structures of 4f and 5f materials studied by angle-resolved photoelectron spectroscopy

Recent remarkable progress in angle-resolved photoelectron spectroscopy (ARPES) has enabled the direct observation of the band structures of 4f and 5f materials. In particular, ARPES with various light sources such as lasers (hν ~ 7 eV) or high-energy synchrotron radiations (hν >/~ 400 eV) has shed light on the bulk band structures of strongly correlated materials with energy scales of a few millielectronvolts to several electronvolts. The purpose of this paper is to summarize the behaviors of 4f and 5f band structures of various rare-earth and actinide materials observed by modern ARPES techniques, and understand how they can be described using various theoretical frameworks. For 4f-electron materials, ARPES studies of CeMIn5(M = Rh, Ir, and Co) and YbRh2Si2 with various incident photon energies are summarized. We demonstrate that their 4f electronic structures are essentially described within the framework of the periodic Anderson model, and that the band-structure calculation based on the local density approximation cannot explain their low-energy electronic structures. Meanwhile, electronic structures of 5f materials exhibit wide varieties ranging from itinerant to localized states. For itinerant U5f compounds such as UFeGa5, their electronic structures can be well-described by the band-structure calculation assuming that all U5f electrons are itinerant. In contrast, the band structures of localized U5f compounds such as UPd3 and UO2 are essentially explained by the localized model that treats U5f electrons as localized core states. In regards to heavy fermion U-based compounds such as the hidden-order compound URu2Si2, their electronic structures exhibit complex behaviors. Their overall band structures are generally well-explained by the band-structure calculation, whereas the states in the vicinity of EF show some deviations due to electron correlation effects. Furthermore, the electronic structures of URu2Si2 in the paramagnetic and hidden-order phases are summarized based on various ARPES studies. The present status of the field as well as possible future directions are also discussed.

Invited Article: High resolution angle resolved photoemission with tabletop 11 eV laser

We developed a table-top vacuum ultraviolet (VUV) laser with 113.778 nm wavelength (10.897 eV) and demonstrated its viability as a photon source for high resolution angle-resolved photoemission spectroscopy (ARPES). This sub-nanosecond pulsed VUV laser operates at a repetition rate of 10 MHz, provides a flux of 2 × 10(12) photons/s, and enables photoemission with energy and momentum resolutions better than 2 meV and 0.012 Å(-1), respectively. Space-charge induced energy shifts and spectral broadenings can be reduced below 2 meV. The setup reaches electron momenta up to 1.2 Å(-1), granting full access to the first Brillouin zone of most materials. Control over the linear polarization, repetition rate, and photon flux of the VUV source facilitates ARPES investigations of a broad range of quantum materials, bridging the application gap between contemporary low energy laser-based ARPES and synchrotron-based ARPES. We describe the principles and operational characteristics of this source and showcase its performance for rare earth metal tritellurides, high temperature cuprate superconductors, and iron-based superconductors.

ARPES measurements of the superconducting gap of Fe-based superconductors and their implications to the pairing mechanism

Its direct momentum sensitivity confers to angle-resolved photoemission spectroscopy (ARPES) a unique perspective in investigating the superconducting gap of multi-band systems. In this review we discuss ARPES studies on the superconducting gap of high-temperature Fe-based superconductors. We show that while Fermi-surface-driven pairing mechanisms fail to provide a universal scheme for the Fe-based superconductors, theoretical approaches based on short-range interactions lead to a more robust and universal description of superconductivity in these materials. Our findings are also discussed in the broader context of unconventional superconductivity.

Tunable vacuum ultraviolet laser based spectrometer for angle resolved photoemission spectroscopy

We have developed an angle-resolved photoemission spectrometer with tunable vacuum ultraviolet laser as a photon source. The photon source is based on the fourth harmonic generation of a near IR beam from a Ti:sapphire laser pumped by a CW green laser and tunable between 5.3 eV and 7 eV. The most important part of the set-up is a compact, vacuum enclosed fourth harmonic generator based on potassium beryllium fluoroborate crystals, grown hydrothermally in the US. This source can deliver a photon flux of over 10(14) photon/s. We demonstrate that this energy range is sufficient to measure the k(z) dispersion in an iron arsenic high temperature superconductor, which was previously only possible at synchrotron facilities.

High-intensity coherent vacuum ultraviolet source using unfocussed commercial dye lasers

Using two or three commercial pulsed nanosecond dye lasers pumped by a single 30 Hz Nd:YAG laser, generation of 0.10 mJ pulses at 125 nm (6 × 10(13) photons∕pulse) has been demonstrated by resonance enhanced four-wave mixing of collimated (unfocussed) laser beams in mercury (Hg) vapor. Phase matching at various vacuum ultraviolet (VUV) wavelengths is achieved by tuning one laser in the vicinity of the 6 (1)S0 → 6 (3)P1 resonance near 253.1 nm. A number of different mixing schemes are characterized. Our observations using broadband lasers (~0.15 cm(-1) bandwidths) are compared to previous calculations pertaining to four-wave mixing of low intensity narrowband laser beams. Prospects for further increases in pulse energies are discussed. We find that VUV tuning curves and intensities are in good agreement with theoretical predictions. The utility of the VUV light source is demonstrated by "soft universal" single-photon VUV ionization in crossed molecular beam studies and for generation of light at 130.2 nm for oxygen atom Rydberg time-of-flight experiments.

Tunable spin polarization in bismuth ultrathin film on Si(111)

We performed a spin- and angle-resolved photoemission spectroscopy of bismuth ultrathin film on Si(111) with various film thickness d. We found that the spin polarization of spin-split Rashba surface states near the Brillouin-zone boundary, which is high (0.7) at d = 40 BL (bilayers), is gradually reduced on decreasing d and almost vanishes at d = 8 BL. This finding provides a novel method to generate spin-polarized electrons with tunable spin-polarization.

Direct measurement of the out-of-plane spin texture in the Dirac-cone surface state of a topological insulator

We have performed spin- and angle-resolved photoemission spectroscopy of Bi(2)Te(3) and present the first direct evidence for the existence of the out-of-plane spin component on the surface state of a topological insulator. We found that the magnitude of the out-of-plane spin polarization on a hexagonally deformed Fermi surface of Bi(2)Te(3) reaches maximally 25% of the in-plane counterpart, while such a sizable out-of-plane spin component does not exist in the more circular Fermi surface of TlBiSe(2), indicating that the hexagonal deformation of the Fermi surface is responsible for the deviation from the ideal helical spin texture. The observed out-of-plane polarization is much smaller than that expected from the existing theory, suggesting that an additional ingredient is necessary for correctly understanding the surface spin polarization in Bi(2)Te(3).

Giant out-of-plane spin component and the asymmetry of spin polarization in surface Rashba states of bismuth thin film

We have performed high-resolution spin- and angle-resolved photoemission spectroscopy of bismuth thin film on Si(111) to investigate the spin structure of surface states. Unlike the conventional Rashba splitting, the magnitude of the in-plane spin polarization is asymmetric between the two elongated surface hole pockets across the zone center. Moreover, we uncovered a giant out-of-plane spin polarization as large as the in-plane counterpart which switches the sign across the Γ-M line. We discuss the present finding in terms of the symmetry breaking and the many-body effects.

High resolution, low hν photoelectron spectroscopy with the use of a microwave excited rare gas lamp and ionic crystal filters

The need for not only bulk sensitive but also extremely high resolution photoelectron spectroscopy for studying detailed electronic structures of strongly correlated electron systems is growing rapidly. Moreover, easy access to such a capability in one's own laboratory is desirable. Demonstrated here is the performance of a microwave excited rare gas (Xe, Kr, and Ar) lamp combined with ionic crystal filters (sapphire, CaF(2), and LiF), which can supply three strong lines near the photon energy of hnyu hν=8.4, 10.0, and 11.6 eV, with the hν resolution of better than 600 μeV for photoelectron spectroscopy. Its performance is demonstrated on some materials by means of both angle-integrated and angle-resolved measurements.

Direct evidence for the dirac-cone topological surface states in the ternary chalcogenide TlBiSe₂

We have performed angle-resolved photoemission spectroscopy on TlBiSe₂, which is a member of the ternary chalcogenides theoretically proposed as candidates for a new class of three-dimensional topological insulators. We found direct evidence for a nontrivial surface metallic state showing an "X"-shaped energy dispersion within the bulk-band gap. The present result unambiguously establishes that TlBiSe₂ is a strong topological insulator with a single Dirac cone at the Brillouin-zone center. The observed bulk-band gap of 0.35 eV is the largest among known topological insulators, making TlBiSe₂ the most promising material for studying room-temperature topological phenomena.

Ultrahigh-resolution spin-resolved photoemission spectrometer with a mini Mott detector

We have developed an ultrahigh-resolution spin-resolved photoemission spectrometer with a highly efficient mini Mott detector and an intense xenon plasma discharge lamp. The spectrometer achieves the energy resolutions of 0.9 and 8 meV for non-spin-resolved and spin-resolved modes, respectively. Three-dimensional spin-polarization is determined by using a 90° electron deflector situated before the Mott detector. The performance of spectrometer is demonstrated by observation of a clear Rashba splitting of the Bi(111) surface states.

The attenuation length of low energy electrons in Yb

Photoelectron emission spectra in a photon energy range between 7.5 and 21 eV are measured for in situ grown polycrystalline Yb films. By comparing bulk and surface core level shifted 4f components we give an estimation of the effective attenuation length (EAL) for low energy (6-20 eV) electrons in Yb, establishing a moderate increase of the EAL upon electron energy decrease. The experimental EAL data are found to be a factor of four smaller than those predicted from the so-called 'universal curve'.

SAMRAI: a novel variably polarized angle-resolved photoemission beamline in the VUV region at UVSOR-II

A novel variably polarized angle-resolved photoemission spectroscopy beamline in the vacuum-ultraviolet (VUV) region has been installed at the UVSOR-II 750 MeV synchrotron light source. The beamline is equipped with a 3 m long APPLE-II type undulator with horizontally/vertically linear and right/left circular polarizations, a 10 m Wadsworth type monochromator covering a photon energy range of 6-43 eV, and a 200 mm radius hemispherical photoelectron analyzer with an electron lens of a +/-18 degrees acceptance angle. Due to the low emittance of the UVSOR-II storage ring, the light source is regarded as an entrance slit, and the undulator light is directly led to a grating by two plane mirrors in the monochromator while maintaining a balance between high-energy resolution and high photon flux. The energy resolving power (hnu/Deltahnu) and photon flux of the monochromator are typically 1 x 10(4) and 10(12) photons/s, respectively, with a 100 microm exit slit. The beamline is used for angle-resolved photoemission spectroscopy with an energy resolution of a few meV covering the UV-to-VUV energy range.

Evolution of a pairing-induced pseudogap from the superconducting gap of (Bi,Pb)2Sr2CuO6

We have performed an ultrahigh-resolution angle-resolved photoemission spectroscopy study of slightly overdoped (Bi,Pb)2Sr2CuO6 to elucidate the origin of the pseudogap. By using a newly developed xenon-plasma light source, we determined the comprehensive momentum and temperature dependencies of the superconducting gap and the pseudogap. We found that the antinodal pseudogap persists far above the superconducting transition temperature and is smoothly connected to the nodal gap. The characteristic temperature of the pseudogap scales well with the superconducting gap size irrespective of the momentum location. The present experimental results point to the pairing origin of the pseudogap.

Coexistence of competing orders with two energy gaps in real and momentum space in the high temperature superconductor Bi_{2}Sr_{2-x}La_{x}CuO_{6+delta}

Through a combined scanning tunneling microscopy and angle-resolved photoemission spectroscopy study, we report the observation of two distinct gaps (a small and a large gap) that coexist both in real space and in the antinodal region of momentum space, below the superconducting transition temperature (T_{c}) of Bi_{2}Sr_{2-x}La_{x}CuO_{6+delta}. We show that the small gap is associated with superconductivity. The large-gap persists above T_{c}, and seems linked to observed charge ordering. We find a strong correlation between the large and small gaps suggesting that they are affected by similar physical processes.