Atom abstraction and gas phase dissociation in the interaction of XeF2 with Si(100)

How dissociated fragments of multiatomic molecules saturate all active surface sites-H2O adsorption on the Si(100) surface

A fundamental question for the adsorption of any gas molecule on surfaces is its saturation coverage, whose value can provide a comprehensive examination for the adsorption mechanisms, dynamic and kinetic processes involved in the adsorption processes. This investigation utilizes scanning tunneling microscopy to visualize the H₂O adsorption processes on the Si(100) surface with a sub-monolayers (<0.05 ML) of chemically-reactive dangling bonds remaining after exposure to (1) a hydrogen atomic beam, (2) H₂O, and (3) Cl₂gases at room temperature. In all three cases, each of the remaining isolated single dangling bonds (sDB) adsorb and is passivated by either of the two dissociation fragments, the H or OH radical, to form a surface Si-H and Si-OH species. A new adsorption mechanism, termed 'dissociative and asynchronous chemisorption', is proposed for the observation presented herein. Upon approaching a sDB site, the H₂O molecule breaks apart into two fragments. One is chemisorbed to the sDB. The other attaches to the same or the neighboring passivated dimer to form a transition state of surface diffusion, which then diffuses on the mostly passivated surface and is eventually chemisorbed to another reactive site. In other words, the chemisorption reactions of the two fragments after dissociation occur at different and uncorrelated time and places. This adsorption mechanism suggests that a diffusion transition state can be an adsorption product in the first step of the dissociative adsorption processes.

Selective patterning of Si-based biosensor surfaces using isotropic silicon etchants

Ultra-sensitive, label-free biosensors have the potential to have a tremendous impact on fields like medical diagnostics. For the majority of these Si-based integrated devices, it is necessary to functionalize the surface with a targeting ligand in order to perform specific biodetection. To do this, silane coupling agents are commonly used to immobilize the targeting ligand. However, this method typically results in the bioconjugation of the entire device surface, which is undesirable. To compensate for this effect, researchers have developed complex blocking strategies that result in selective patterning of the sensor surface. Recently, silane coupling agents were used to attach biomolecules to the surface of silica toroidal biosensors integrated on a silicon wafer. Interestingly, only the silica biosensor surface was conjugated. Here, we hypothesize why this selective patterning occurred. Specifically, the silicon etchant (xenon difluoride), which is used in the fabrication of the biosensor, appears to reduce the efficiency of the silane coupling attachment to the underlying silicon wafer. These results will enable future researchers to more easily control the bioconjugation of their sensor surfaces, thus improving biosensor device performance.

Mechanism and dynamics of the reaction of XeF2 with fluorinated Si(100): possible role of gas phase dissociation of a surface reaction product in plasmaless etching

Xenon difluoride is observed to react with Si-Si sigma-dimer and sigma-lattice bonds of Si(100)2 x 1 at 150 K by single and two atom abstraction at F coverages above 1 ML. As in the limit of zero F coverage, a measurable fraction of the scattered, gas phase product of single atom abstraction, XeF, is sufficiently internally excited to dissociate into F and Xe atoms before detection. Using the XeF internal energy and orientation distributions determined in the limit of zero coverage, the laws of conservation of momentum, energy, and mass are applied to the measured F velocity and angular distributions at higher coverage to simulate the Xe atom velocity and angular distributions and their intensities at higher coverage. The simulation predicts the observed Xe atom velocity and angular distributions at high coverage reasonably well, largely because the exothermicity channeled to XeF remains approximately constant as the coverage increases. This constancy is an opportune consequence of the trade-off between the attractiveness of the potential energy surface as the coverage is increased and the dynamics of the XeF product along the potential surface. The energy, momentum, and mass conservation analysis is also used to distinguish between Xe atoms that arise from XeF gas phase dissociation and Xe atoms that are produced by two atom abstraction. This distinction enables the calculation of percentages of the single and two atom abstraction pathways, as well as the percentages of the two pathways available to the Xe atom produced by two atom abstraction, inelastic scattering, and desorption. Finally, the simulation reveals that between 9% and 12% of F atoms produced by gas phase dissociation of XeF are scattered back toward the surface. These F atoms likely react readily with Si to form the higher fluorides that ultimately lead to etching. Gas phase dissociation of the scattered product of a surface reaction is a novel mechanism to explain the unique reactivity of XeF(2) to etch Si in the absence of a plasma.