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Zheng W, Zhao X, Fu W. Review of Vertical Graphene and its Applications. ACS APPLIED MATERIALS & INTERFACES 2021; 13:9561-9579. [PMID: 33616394 DOI: 10.1021/acsami.0c19188] [Citation(s) in RCA: 23] [Impact Index Per Article: 7.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
Vertical graphene (VG) is a thin-film complex material featuring hierarchical microstructures: graphene-containing carbon nanosheets growing vertically on its deposition substrate, few-layer graphene basal layers, and chemically active atomistic defect sites and edges. Thanks to the fundamental characteristics of graphene materials, e.g. excellent electrical conductivity, thermal conductivity, chemical stability, and large specific surface area, VG materials have been successfully implemented into various niche applications which are strongly associated with their unique morphology. The microstructure of VG materials can be tuned by modifying growth methods and the parameters of growth processes. Multiple growth processes have been developed to address faster, safer, and mass production methods of VG materials, as well as accommodating various applications. VG's successful applications include field emission, supercapacitors, fuel cells, batteries, gas sensors, biochemical sensors, electrochemical analysis, strain sensors, wearable electronics, photo trapping, terahertz emission, etc. Research topics on VG have been more diversified in recent years, indicating extensive attention from the research community and great commercial value. In this review article, VG's morphology is briefly reviewed, and then various growth processes are discussed from the perspective of plasma science. After that, the most recent progress in its applications and related sciences and technologies are discussed.
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Affiliation(s)
- Wei Zheng
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, China
- William and Mary Research Institute, College of William and Mary, Williamsburg, Virginia 23187, United States
| | - Xin Zhao
- William and Mary Research Institute, College of William and Mary, Williamsburg, Virginia 23187, United States
| | - Wenjie Fu
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, China
- William and Mary Research Institute, College of William and Mary, Williamsburg, Virginia 23187, United States
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Santhosh NM, Vasudevan A, Jurov A, Filipič G, Zavašnik J, Cvelbar U. Oriented Carbon Nanostructures from Plasma Reformed Resorcinol-Formaldehyde Polymer Gels for Gas Sensor Applications. NANOMATERIALS (BASEL, SWITZERLAND) 2020; 10:E1704. [PMID: 32872479 PMCID: PMC7559324 DOI: 10.3390/nano10091704] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/28/2020] [Revised: 08/23/2020] [Accepted: 08/25/2020] [Indexed: 02/03/2023]
Abstract
Oriented carbon nanostructures (OCNs) with dominant graphitic characteristics have attracted research interest for various applications due to the excellent electrical and optical properties owing to their vertical orientation, interconnected structures, electronic properties, and large surface area. Plasma enhanced chemical vapor deposition (PECVD) is considered as a promising method for the large-scale synthesis of OCNs. Alternatively, structural reformation of natural carbon precursor or phenol-based polymers using plasma-assisted surface treatment is also considered for the fabrication of OCNs. In this work, we have demonstrated a fast technique for the synthesis of OCNs by plasma-assisted structure reformation of resorcinol-formaldehyde (RF) polymer gels using radio-frequency inductively coupled plasma (rf-ICP). A thin layer of RF polymer gel cast on a glass substrate was used as the carbon source and treated with rf plasma under different plasma discharge conditions. Argon and hydrogen gases were used in surface treatment, and the growth of carbon nanostructures at different discharge parameters was systematically examined. This study explored the influence of the gas flow rate, the plasma power, and the treatment time on the structural reformation of polymer gel to produce OCNs. Moreover, the gas-sensing properties of as-prepared OCNs towards ethanol at atmospheric conditions were also investigated.
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Affiliation(s)
- Neelakandan M. Santhosh
- Department of Gaseous Electronics, Jožef Stefan Institute, Jamova cesta 39, SI-1000 Ljubljana, Slovenia; (N.M.S.); (A.V.); (A.J.); (G.F.); (J.Z.)
- Jožef Stefan International Postgraduate School, Jamova cesta 39, SI-1000 Ljubljana, Slovenia
| | - Aswathy Vasudevan
- Department of Gaseous Electronics, Jožef Stefan Institute, Jamova cesta 39, SI-1000 Ljubljana, Slovenia; (N.M.S.); (A.V.); (A.J.); (G.F.); (J.Z.)
- Jožef Stefan International Postgraduate School, Jamova cesta 39, SI-1000 Ljubljana, Slovenia
| | - Andrea Jurov
- Department of Gaseous Electronics, Jožef Stefan Institute, Jamova cesta 39, SI-1000 Ljubljana, Slovenia; (N.M.S.); (A.V.); (A.J.); (G.F.); (J.Z.)
- Jožef Stefan International Postgraduate School, Jamova cesta 39, SI-1000 Ljubljana, Slovenia
| | - Gregor Filipič
- Department of Gaseous Electronics, Jožef Stefan Institute, Jamova cesta 39, SI-1000 Ljubljana, Slovenia; (N.M.S.); (A.V.); (A.J.); (G.F.); (J.Z.)
| | - Janez Zavašnik
- Department of Gaseous Electronics, Jožef Stefan Institute, Jamova cesta 39, SI-1000 Ljubljana, Slovenia; (N.M.S.); (A.V.); (A.J.); (G.F.); (J.Z.)
| | - Uroš Cvelbar
- Department of Gaseous Electronics, Jožef Stefan Institute, Jamova cesta 39, SI-1000 Ljubljana, Slovenia; (N.M.S.); (A.V.); (A.J.); (G.F.); (J.Z.)
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M Santhosh N, Filipič G, Kovacevic E, Jagodar A, Berndt J, Strunskus T, Kondo H, Hori M, Tatarova E, Cvelbar U. N-Graphene Nanowalls via Plasma Nitrogen Incorporation and Substitution: The Experimental Evidence. NANO-MICRO LETTERS 2020; 12:53. [PMID: 34138293 PMCID: PMC7770896 DOI: 10.1007/s40820-020-0395-5] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/21/2019] [Accepted: 01/28/2020] [Indexed: 05/12/2023]
Abstract
Incorporating nitrogen (N) atom in graphene is considered a key technique for tuning its electrical properties. However, this is still a great challenge, and it is unclear how to build N-graphene with desired nitrogen configurations. There is a lack of experimental evidence to explain the influence and mechanism of structural defects for nitrogen incorporation into graphene compared to the derived DFT theories. Herein, this gap is bridged through a systematic study of different nitrogen-containing gaseous plasma post-treatments on graphene nanowalls (CNWs) to produce N-CNWs with incorporated and substituted nitrogen. The structural and morphological analyses describe a remarkable difference in the plasma-surface interaction, nitrogen concentration and nitrogen incorporation mechanism in CNWs by using different nitrogen-containing plasma. Electrical conductivity measurements revealed that the conductivity of the N-graphene is strongly influenced by the position and concentration of C-N bonding configurations. These findings open up a new pathway for the synthesis of N-graphene using plasma post-treatment to control the concentration and configuration of incorporated nitrogen for application-specific properties.
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Affiliation(s)
- Neelakandan M Santhosh
- Jožef Stefan Institute, Jamova cesta 39, 1000, Ljubljana, Slovenia
- Jožef Stefan International Postgraduate School, Jamova cesta 39, 1000, Ljubljana, Slovenia
| | - Gregor Filipič
- Jožef Stefan Institute, Jamova cesta 39, 1000, Ljubljana, Slovenia
| | - Eva Kovacevic
- GREMI CNRS-University of Orleans, 14 rue d'Issoudun, 45067, Orleans Cedex 2, France
| | - Andrea Jagodar
- GREMI CNRS-University of Orleans, 14 rue d'Issoudun, 45067, Orleans Cedex 2, France
| | - Johannes Berndt
- GREMI CNRS-University of Orleans, 14 rue d'Issoudun, 45067, Orleans Cedex 2, France
| | - Thomas Strunskus
- Institute for Materials Science, Christian Albrechts University Kiel, Kaiserstr, 2, 24143, Kiel, Germany
| | - Hiroki Kondo
- Department of Electrical Engineering and Computer Science, University of Nagoya, Furo-cho Chikusa-ku, Nagoya, Aichi, 464-8603, Japan
| | - Masaru Hori
- Department of Electrical Engineering and Computer Science, University of Nagoya, Furo-cho Chikusa-ku, Nagoya, Aichi, 464-8603, Japan
| | - Elena Tatarova
- Instituto de Plasmas e Fusão Nuclear, Instituto Superior Técnico, Universidade de Lisboa, 1049, Lisbon, Portugal
| | - Uroš Cvelbar
- Jožef Stefan Institute, Jamova cesta 39, 1000, Ljubljana, Slovenia.
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Bo Z, Yang Y, Chen J, Yu K, Yan J, Cen K. Plasma-enhanced chemical vapor deposition synthesis of vertically oriented graphene nanosheets. NANOSCALE 2013; 5:5180-204. [PMID: 23670071 DOI: 10.1039/c3nr33449j] [Citation(s) in RCA: 124] [Impact Index Per Article: 11.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
Vertically oriented graphene (VG) nanosheets have attracted growing interest for a wide range of applications, from energy storage, catalysis and field emission to gas sensing, due to their unique orientation, exposed sharp edges, non-stacking morphology, and huge surface-to-volume ratio. Plasma-enhanced chemical vapor deposition (PECVD) has emerged as a key method for VG synthesis; however, controllable growth of VG with desirable characteristics for specific applications remains a challenge. This paper attempts to summarize the state-of-the-art research on PECVD growth of VG nanosheets to provide guidelines on the design of plasma sources and operation parameters, and to offer a perspective on outstanding challenges that need to be overcome to enable commercial applications of VG. The review starts with an overview of various types of existing PECVD processes for VG growth, and then moves on to research on the influences of feedstock gas, temperature, and pressure on VG growth, substrate pretreatment, the growth of VG patterns on planar substrates, and VG growth on cylindrical and carbon nanotube (CNT) substrates. The review ends with a discussion on challenges and future directions for PECVD growth of VG.
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Affiliation(s)
- Zheng Bo
- State Key Laboratory of Clean Energy Utilization, Institute for Thermal Power Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China.
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