1
|
Concepción O, Søgaard NB, Bae JH, Yamamoto Y, Tiedemann AT, Ikonic Z, Capellini G, Zhao QT, Grützmacher D, Buca D. Isothermal Heteroepitaxy of Ge 1-x Sn x Structures for Electronic and Photonic Applications. ACS APPLIED ELECTRONIC MATERIALS 2023; 5:2268-2275. [PMID: 37124237 PMCID: PMC10134428 DOI: 10.1021/acsaelm.3c00112] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/25/2023] [Accepted: 03/21/2023] [Indexed: 05/03/2023]
Abstract
Epitaxy of semiconductor-based quantum well structures is a challenging task since it requires precise control of the deposition at the submonolayer scale. In the case of Ge1-x Sn x alloys, the growth is particularly demanding since the lattice strain and the process temperature greatly impact the composition of the epitaxial layers. In this paper, the realization of high-quality pseudomorphic Ge1-x Sn x layers with Sn content ranging from 6 at. % up to 15 at. % using isothermal processes in an industry-compatible reduced-pressure chemical vapor deposition reactor is presented. The epitaxy of Ge1-x Sn x layers has been optimized for a standard process offering a high Sn concentration at a large process window. By varying the N2 carrier gas flow, isothermal heterostructure designs suitable for quantum transport and spintronic devices are obtained.
Collapse
Affiliation(s)
- Omar Concepción
- Peter
Gruenberg Institute 9 (PGI-9), Forschungszentrum Juelich, 52428 Juelich, Germany
| | - Nicolaj B. Søgaard
- Interdisciplinary
Nanoscience Center (iNANO), Aarhus University, 8000 Aarhus C, Denmark
| | - Jin-Hee Bae
- Peter
Gruenberg Institute 9 (PGI-9), Forschungszentrum Juelich, 52428 Juelich, Germany
| | - Yuji Yamamoto
- IHP
- Leibniz Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
| | - Andreas T. Tiedemann
- Peter
Gruenberg Institute 9 (PGI-9), Forschungszentrum Juelich, 52428 Juelich, Germany
| | - Zoran Ikonic
- Pollard
Institute, School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United
Kingdom
| | - Giovanni Capellini
- IHP
- Leibniz Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
- Dipartimento
di Scienze, Università Roma Tre, Viale G. Marconi 446, 00146 Roma, Italy
| | - Qing-Tai Zhao
- Peter
Gruenberg Institute 9 (PGI-9), Forschungszentrum Juelich, 52428 Juelich, Germany
| | - Detlev Grützmacher
- Peter
Gruenberg Institute 9 (PGI-9), Forschungszentrum Juelich, 52428 Juelich, Germany
| | - Dan Buca
- Peter
Gruenberg Institute 9 (PGI-9), Forschungszentrum Juelich, 52428 Juelich, Germany
| |
Collapse
|
2
|
Ren Y, Leubner P, Verheijen MA, Haverkort JEM, Bakkers EPAM. Hexagonal silicon grown from higher order silanes. NANOTECHNOLOGY 2019; 30:295602. [PMID: 30840942 DOI: 10.1088/1361-6528/ab0d46] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
We demonstrate the merits of an unexplored precursor, tetrasilane (Si4H10), as compared to disilane (Si2H6) for the growth of defect-free, epitaxial hexagonal silicon (Si). We investigate the growth kinetics of hexagonal Si shells epitaxially around defect-free wurtzite gallium phosphide (GaP) nanowires. Two temperature regimes are identified, representing two different surface reaction mechanisms for both types of precursors. Growth in the low temperature regime (415 °C-600 °C) is rate limited by interaction between the Si surface and the adsorbates, and in the high temperature regime (600 °C-735 °C) by chemisorption. The activation energy of the Si shell growth is 2.4 ± 0.2 eV for Si2H6 and 1.5 ± 0.1 eV for Si4H10 in the low temperature regime. We observe inverse tapering of the Si shells and explain this phenomenon by a basic diffusion model where the substrate acts as a particle sink. Most importantly, we show that, by using Si4H10 as a precursor instead of Si2H6, non-tapered Si shells can be grown with at least 50 times higher growth rate below 460 °C. The lower growth temperature may help to reduce the incorporation of impurities resulting from the growth of GaP.
Collapse
Affiliation(s)
- Yizhen Ren
- Eindhoven University of Technology, Department of Applied Physics, Eindhoven, The Netherlands
| | | | | | | | | |
Collapse
|
3
|
Origin of Pseudo Second Order Reaction in a-Si:H Growth. E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY 2017. [DOI: 10.1380/ejssnt.2017.93] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/20/2022]
|
4
|
Orlov LK, Ivin SV. Kinetics of the decomposition of disilane on a silicon growth surface into two non-identical radicals. RUSSIAN JOURNAL OF PHYSICAL CHEMISTRY B 2016. [DOI: 10.1134/s1990793116020056] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/23/2022]
|
5
|
Orlov LK, Ivin SV. Kinetics of surface pyrolysis of a silane–germane gas mixture under conditions of epitaxial film deposition of Si1–x Ge x solid solutions. RUSS J GEN CHEM+ 2016. [DOI: 10.1134/s107036321512004x] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/23/2022]
|
6
|
Orlov LK, Ivina NL, Smyslova TN. Specificity of mono- and disilane decomposition at silicon surface under conditions of epitaxial growth. RUSS J GEN CHEM+ 2014. [DOI: 10.1134/s1070363213120037] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/23/2022]
|
7
|
Ivina NL, Smyslova TN. Kinetics of the decomposition of disilane molecules on a silicon growth surface in vacuum chemical epitaxy. RUSSIAN JOURNAL OF PHYSICAL CHEMISTRY B 2013. [DOI: 10.1134/s1990793113050060] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/22/2022]
|
8
|
Ceriotti M, Montalenti F, Bernasconi M. Density functional study of the decomposition pathways of SiH₃ and GeH₃ at the Si(100) and Ge(100) surfaces. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2012; 24:104002. [PMID: 22354872 DOI: 10.1088/0953-8984/24/10/104002] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
By means of first-principles calculations we studied the decomposition pathways of SiH₃ on Ge(100) and of GeH₃ on Si(100), of interest for the growth of crystalline SiGe alloys and Si/Ge heterostructures by plasma-enhanced chemical vapor deposition. We also investigated H desorption via reaction of two adsorbed SiH₂/GeH₂ species (β₂ reaction) or via Eley-Rideal abstraction of surface H atoms from the impinging SiH₃ and GeH₃ species. The calculated activation energies for the different processes suggest that the rate-limiting step for the growth of Si/Ge systems is still the β₂ reaction of two SiH₂ as in the growth of crystalline Si.
Collapse
Affiliation(s)
- M Ceriotti
- Physical and Theoretical Chemistry Laboratory, University of Oxford, South Parks Road, Oxford OX1 3QZ, UK
| | | | | |
Collapse
|
9
|
Hirayama H, Hiroi M, Koyama K, Tatsumi T, Sato M. Gas Source Silicon Molecular Beam Epitaxy. ACTA ACUST UNITED AC 2011. [DOI: 10.1557/proc-220-545] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]
Abstract
ABSTRACTGas source silicon molecular beam epitaxial (Si-MBE) growth is microscopically governed by a disociative adsorption of silicon hydrides, such as Si2H6 source gas molecules on Si surface. The dissociative adsorption generates SiH species on the surface. From this hydride phase, hydrogen desorbs thermaly. The temperature dependence of the growth rate indicated that the hydrogen desorption from the SiH is the rate limiting step. In HBO2 Knudsen cell doping, B adsorbates block the surface migration. Such a blocking effect can be avoided by B2H6 gas dopant, because of the similar incorpration mechanism of B2H6 to that of Si2H6. However, in PH3 gas doping, a crystal quality degradation was observed at a high doping range due to the preferentially high sticking coefficient of PH3 and the resulting surface dangling bond termination. The selective epitaxial growth of a B doped layer using Si2H6 and B2H6 was applied to a novel structured base fabrication for super self-aligned selectively grown base transistor (SSSBT). A successful achievement of the SSSBT fabrication indicates the high potentiality of gas source Si-MBE to the sub-micron size ultra-high speed bipolar large scale integrated (LSI) circuits.
Collapse
|
10
|
Ong SW, Tok ES, Kang HC. Revisiting the vibrational spectra of silicon hydrides on Si(100)-(2x1) surface: What is on the surface when disilane dissociates? J Chem Phys 2010; 133:074708. [PMID: 20726664 DOI: 10.1063/1.3469978] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
Abstract
Even though the decomposition of disilane on silicon surfaces has been extensively studied, the molecular mechanism for its decomposition has not been fully resolved. The general view motivated partly by spectroscopic data is that decomposition occurs through silicon-silicon bond dissociation although there is evidence from kinetics that silicon-hydrogen bond dissociation is important, and perhaps even dominant. Thus, we reexamine the assignment of the experimental vibrational peaks observed in disilane and silane adsorption in order to assess the evidence for the silicon hydride species that are formed during decomposition. We calculate the vibrational density of states for a number of silicon hydride species on the Si(100)-(2x1) surface using Car-Parrinello molecular dynamics. We obtain the calculated vibrational frequency in the adiabatic limit by extrapolating to zero orbital mass, calibrating our method using the well-established monohydride peak. The calculated vibrational frequencies of the monohydride are in good agreement experimental data. Our results show that the spectroscopic data for silicon hydrides does not preclude the occurrence of Si(2)H(5) on the surface thus providing evidence for silicon-hydrogen bond dissociation during disilane adsorption. Specifically, we find that an experimentally observed vibrational peak at 2150 cm(-1) that has generally been attributed to the trihydride SiH(3) is more likely to be due to Si(2)H(5). Our results also clear up the assignment of two peaks for monohydride species adsorbed at the edge of a growing terrace, and a peak for the dihydride species adsorbed in the interdimer configuration.
Collapse
Affiliation(s)
- S W Ong
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
| | | | | |
Collapse
|
11
|
Ng RQM, Tok ES, Kang HC. Molecular mechanisms for disilane chemisorption on Si(100)-(2 x 1). J Chem Phys 2009; 130:114702. [PMID: 19317550 DOI: 10.1063/1.3089623] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
Abstract
The dissociative chemisorption of disilane is an important elementary process in the growth of silicon films. Although factors governing the rate of film growth such as surface temperature and disilane flux have been extensively studied experimentally by a large number of groups, the molecular mechanism for disilane adsorption is not well established. In particular, although it is generally held that chemisorption occurs via silicon-silicon bond dissociation, there have been a number of suggestions that silicon-hydrogen bond dissociation also occurs. We consider this issue in detail hereby examining a number of different paths that disilane can take to chemisorb. In addition to silicon-silicon bond dissociation paths, we examine three different mechanisms for silicon-hydrogen bond dissociation, for each path considering both adsorption at interdimer and intradimer sites. The calculated barriers are critically compared to experimental data. We conclude that silicon-hydrogen bond dissociation is likely, finding two zero barrier paths for chemisorption at interdimer sites, and a precursor-mediated path with a low barrier. We also find two precursor states, and show that each can lead to chemisorption via either silicon-silicon or silicon-hydrogen bond dissociation. Finally, we calculated the barriers for reaction of coadsorbed disilyl and hydrogen to form gas phase silane. Our calculations are performed using density-functional theory within a planewave ultrasoft pseudopotential methodology. We traced the reaction paths with the nudged-elastic band technique.
Collapse
Affiliation(s)
- Rachel Qiao-Ming Ng
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | | | | |
Collapse
|
12
|
Bisson R, Dang TT, Sacchi M, Beck RD. Vibrational activation in direct and precursor-mediated chemisorption of SiH4 on Si(100). J Chem Phys 2008; 129:081103. [DOI: 10.1063/1.2976563] [Citation(s) in RCA: 20] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/14/2022] Open
|
13
|
Chapter 16 Growth and Etching of Semiconductors. ACTA ACUST UNITED AC 2008. [DOI: 10.1016/s1573-4331(08)00016-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
14
|
Singh T, Valipa MS, Mountziaris TJ, Maroudas D. Mechanisms and energetics of hydride dissociation reactions on surfaces of plasma-deposited silicon thin films. J Chem Phys 2007; 127:194703. [DOI: 10.1063/1.2781393] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/16/2023] Open
|
15
|
Shi J, Tok ES, Kang HC. The dissociative adsorption of silane and disilane on Si(100)-(2×1). J Chem Phys 2007; 127:164713. [DOI: 10.1063/1.2799980] [Citation(s) in RCA: 19] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
|
16
|
Onischuk AA, Panfilov VN. Mechanism of thermal decomposition of silanes. RUSSIAN CHEMICAL REVIEWS 2007. [DOI: 10.1070/rc2001v070n04abeh000603] [Citation(s) in RCA: 25] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
|
17
|
|
18
|
Schneider KS, Nicholson KT, Owens TM, Orr BG, Holl MMB. The differential reactivity of octahydridosilsesquioxane on Si(100)-2x1 and Si(111)-7x7: a comparative experimental study. Ultramicroscopy 2003; 97:35-45. [PMID: 12801655 DOI: 10.1016/s0304-3991(03)00028-7] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/19/2022]
Abstract
Scanning tunneling microscopy (STM), in conjunction with X-ray photoemission (XPS) and reflection-absorption infrared (RAIRS) spectroscopy, has been used to investigate the reaction of octahydridosilsesquioxane clusters (H(8)Si(8)O(12)) on the Si(100)-2x1 and Si(111)-7x7 surfaces. The clusters exhibit a markedly different reactivity upon exposure to the two clean silicon surfaces. STM data is presented that, in conjunction with XPS and RAIRS data, provides numerous constraints upon possible geometries for the chemisorbed clusters. The sum of the data is consistent with a dissociative reaction mechanism on Si(100)-2x1, resulting in cluster attachment to the surface via a single vertex. Conversely, data of Si(111)-7x7 subject to a saturation exposure of H(8)Si(8)O(12) is presented that is highly suggestive of cluster decomposition on the surface.
Collapse
Affiliation(s)
- Kevin S Schneider
- Chemistry Department, University of Michigan, 930 N. University, 1500 Chemistry Building, Ann Arbor, MI 48109-1055, USA
| | | | | | | | | |
Collapse
|
19
|
Lin JS, Lee LF, Chou WC. Density Functional Study of the Effect of SiH 4/GeH 4and Si(001)/Ge(001) on Gas-Surface Reactivity during Initial Dissociative Adsorption. J CHIN CHEM SOC-TAIP 2003. [DOI: 10.1002/jccs.200300089] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
|
20
|
Rechtsteiner GA, Hampe O, Jarrold MF. Synthesis and Temperature-Dependence of Hydrogen-Terminated Silicon Clusters. J Phys Chem B 2001. [DOI: 10.1021/jp004223n] [Citation(s) in RCA: 43] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Affiliation(s)
- Gregory A. Rechtsteiner
- Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208
| | - Oliver Hampe
- Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208
| | - Martin F. Jarrold
- Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208
| |
Collapse
|
21
|
Lm JS, Kuo YT, Chen JC, Lee MH. Total Energy Calculations for Silane Dissociative Chemisorption onto Si(100) and Si(111) Surfaces. J CHIN CHEM SOC-TAIP 2000. [DOI: 10.1002/jccs.200000120] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
|
22
|
Lin J, Kuo Y, Lee MH, Lee KH, Chen J. Density functional study of structural and electronic properties of silane adsorbed Si(100) surface. ACTA ACUST UNITED AC 2000. [DOI: 10.1016/s0166-1280(99)00179-7] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
|
23
|
Brown AR, Doren DJ. Dissociative adsorption of silane on the Si(100)-(2×1) surface. J Chem Phys 1999. [DOI: 10.1063/1.477986] [Citation(s) in RCA: 45] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
|
24
|
Robinson Brown A, Doren DJ. Energetics of silicon hydrides on the Si(100)-(2×1) surface. J Chem Phys 1998. [DOI: 10.1063/1.476814] [Citation(s) in RCA: 18] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
|
25
|
Batinica GJ, Crowell JE. Photoinduced Reaction of Disilane with the Si(111) Surface. J Phys Chem B 1998. [DOI: 10.1021/jp980658n] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- Gregory J. Batinica
- Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093-0314
| | - John E. Crowell
- Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093-0314
| |
Collapse
|
26
|
Chiang CM, Gates SM, Lee SS, Kong M, Bent SF. Etching, Insertion, and Abstraction Reactions of Atomic Deuterium with Amorphous Silicon Hydride Films. J Phys Chem B 1997. [DOI: 10.1021/jp963717a] [Citation(s) in RCA: 33] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
|
27
|
Zhang KZ, Bender JE, Lee S, McFeely FR. Si 2p core-level shifts at the Si(100)-SiO2 interface: An experimental study. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:7686-7689. [PMID: 9984436 DOI: 10.1103/physrevb.54.7686] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
28
|
Pasquarello A, Hybertsen MS, Car R. Spherosiloxane H8Si8O12 clusters on Si(001): First-principles calculation of Si 2p core-level shifts. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:R2339-R2342. [PMID: 9986172 DOI: 10.1103/physrevb.54.r2339] [Citation(s) in RCA: 25] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
29
|
Hamers RJ, Wang Y. Atomically-Resolved Studies of the Chemistry and Bonding at Silicon Surfaces. Chem Rev 1996; 96:1261-1290. [PMID: 11848789 DOI: 10.1021/cr950213k] [Citation(s) in RCA: 160] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- Robert J. Hamers
- Department of Chemistry, University of Wisconsin, 1101 University Avenue, Madison, Wisconsin 53706
| | | |
Collapse
|
30
|
Gates SM. Surface Chemistry in the Chemical Vapor Deposition of Electronic Materials. Chem Rev 1996; 96:1519-1532. [PMID: 11848801 DOI: 10.1021/cr950233m] [Citation(s) in RCA: 69] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Affiliation(s)
- Stephen M. Gates
- IBM T. J. Watson Research Center, Yorktown Heights, New York, 10598
| |
Collapse
|
31
|
Lee SS, Kong MJ, Bent SF, Chiang CM, Gates SM. Infrared Study of the Reactions of Atomic Deuterium with Amorphous Silicon Monohydride. ACTA ACUST UNITED AC 1996. [DOI: 10.1021/jp961928+] [Citation(s) in RCA: 18] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
|
32
|
Xia L, Jones ME, Maity N, Engstrom JR. Dissociation and pyrolysis of Si2H6 on Si surfaces: The influence of surface structure and adlayer composition. J Chem Phys 1995. [DOI: 10.1063/1.469739] [Citation(s) in RCA: 41] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022] Open
|
33
|
D’Evelyn MP, Yang YL, Cohen SM. Adsorption, desorption, and decomposition of HCl and HBr on Ge(100): Competitive pairing and near‐first‐order desorption kinetics. J Chem Phys 1994. [DOI: 10.1063/1.467686] [Citation(s) in RCA: 23] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
|
34
|
McFeely FR. Si/SiO2 interface: New structures and well-defined model systems. PHYSICAL REVIEW LETTERS 1993; 71:2441-2444. [PMID: 10054681 DOI: 10.1103/physrevlett.71.2441] [Citation(s) in RCA: 19] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
|
35
|
Shane SF, Kolasinski KW, Zare RN. Internal‐state distributions of H2 desorbed from mono‐ and dihydride species on Si(100). J Chem Phys 1992. [DOI: 10.1063/1.462952] [Citation(s) in RCA: 53] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
|
36
|
Dissociative chemisorption mechanisms of disilane on Si(100)-(2×1) and H-terminated Si(100) surfaces. Chem Phys Lett 1991. [DOI: 10.1016/0009-2614(91)80017-r] [Citation(s) in RCA: 50] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
|
37
|
Boland JJ. Role of hydrogen desorption in the chemical-vapor deposition of Si(100) epitaxial films using disilane. PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 44:1383-1386. [PMID: 9999660 DOI: 10.1103/physrevb.44.1383] [Citation(s) in RCA: 87] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
38
|
Jing Z, Whitten JL. Ab initio studies of silane decomposition on Si(100). PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 44:1741-1746. [PMID: 9999708 DOI: 10.1103/physrevb.44.1741] [Citation(s) in RCA: 15] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|