Electronic structure of small GaAs clusters. II

AB INITIO STUDY OF DIFFERENT PROBABLE STRUCTURES OF GROUP III ANTIMONIDES

Ab initio studies of the small ( AlSb , InSb , GaSb ) clusters is performed to investigate the changes in structural, vibrational and electronic properties. The calculated results clearly demonstrate that any change in the electronic configuration of the neutral clusters gives rise to noticeable changes in the structure. The structures of the neutral, positively and negatively charged clusters are fully optimized, taking the importance of the symmetry into account in all the cases. The changes in vibrational properties are explained keeping in mind the change in the interatomic distances due to any change in the electronic configuration.

Ab initiofinite field (hyper)polarizability computations on stoichiometric gallium arsenide clusters GanAsn (n=2–9)

We report reliable ab initio finite field (hyper)polarizability values at Hartree-Fock and second order Moller-Plesset perturbation theory (MP2) levels of theory for different geometrical configurations of small gallium arsenide clusters Ga(n)As(n) with n=2-5. We relied on all-electron basis sets and pseudopotentials suitable for (hyper)polarizability calculations. In each case, we used structures that have been established in the literature after we optimized their geometries at B3LYP/cc-pVTZ-PP level of theory. Our results suggest that the first order hyperpolarizability (beta) is much more sensitive to the special geometric features than the second order hyperpolarizability (gamma). For the most stable configurations up to ten atoms the second order hyperpolarizability at MP2 level of theory varies between 15 x 10(4) and 32 x 10(4) e(4)a0 (4)Eh(-3). In addition, we examined the polarizability per atom evolution versus the cluster size for Ga(n)As(n) with n=2-9. Our work extends earlier theoretical studies which were limited to eight atoms and exposes that the polarizability/atom of the most stable stoichiometric configurations up to Ga(9)As(9) continues the monotonic downward trend with increasing size. Lastly, from the methodological point of view, our analysis shows that apart from polarizabilities, augmented pseudopotentials yield reliable first and second hyperpolarizability values as well.

Theoretical study of aluminum arsenide clusters: equilibrium geometries and electronic structures of Al(n)As(n) (n=1-4)

The geometry, electronic configurations, harmonic vibrational frequencies and stability of the structural isomers of Al(n)As(n) clusters (n=1-4) have been investigated using density functional theory. For dimers and trimers, the lowest energy structures are planar cumulenic rings (IIs, VIs) with D(nh) symmetry. The caged structure with T(d) symmetry (IXs) lie lowest in energy among the tetramers. The AlAs bond dominates the structures for many isomers so that one preferred dissociation channel is loss of the AlAs monomer. The atomic charges, hybridization and chemical bonding in the different structures are also discussed. Comparisons with valence-isoelectronic Si(2n), Al(n)P(n) and Ga(n)As(n) clusters of same size, the properties of the aluminum arsenide clusters are analogous to those of their corresponding Al(n)P(n), Si(2n) counterparts. The results can explain the modification and refinement of Si phase in AlSi alloy in the molecular level.

Electronic structure and stability of AlnPn (n = 2-4) clusters

The geometry, electronic configurations, harmonic vibrational frequencies, and stability of the structural isomers of aluminum phosphide clusters have been investigated using the density functional theory. For dimers and trimers, the lowest energy structures are cyclic (IIs, IIIs) with D(nh) symmetry. The caged structure with Td symmetry (Xs) lie lowest in energy among the tetramers. The Al--P bond dominates the structures for many isomers so that one preferred dissociation channel is loss of the AlP monomer. The hybridization and chemical bonding in the different structures are also discussed. Comparisons with silicon and boron nitride clusters, the ground state structures of Al(n)P(n) clusters are analogous to those of their corresponding Si(2n) counterparts. This similarity follows the isoelectronic principle.