Dark field photoelectron emission microscopy of micron scale few layer graphene

Graphene-diamond junction photoemission microscopy and electronic interactions

Polycrystalline graphene was transferred onto differently terminated epitaxial layers of boron-doped diamond deposited onto single crystal substrates. Chemical and electronic characterisation was performed using energy-filtered photoemission electron microscopy and angle-resolved photoemission spectroscopy. Electronic interaction between the diamond and graphene was observed, where doping of the graphene on the hydrogen and oxygen terminated diamond was n-doping of 250 meV and 0 meV respectively. We found that the wide window of achievable graphene doping is effectively determined by the diamond surface dipole, easily tuneable with a varying surface functionalisation. A Schottky junction using the graphene-diamond structure was clearly observed and shown to reduce downward band bending of the hydrogen terminated diamond, producing a Schottky barrier height of 330 meV.

A Perspective on the Application of Spatially Resolved ARPES for 2D Materials

In this paper, a perspective on the application of Spatially- and Angle-Resolved PhotoEmission Spectroscopy (ARPES) for the study of two-dimensional (2D) materials is presented. ARPES allows the direct measurement of the electronic band structure of materials generating extremely useful insights into their electronic properties. The possibility to apply this technique to 2D materials is of paramount importance because these ultrathin layers are considered fundamental for future electronic, photonic and spintronic devices. In this review an overview of the technical aspects of spatially localized ARPES is given along with a description of the most advanced setups for laboratory and synchrotron-based equipment. This technique is sensitive to the lateral dimensions of the sample. Therefore, a discussion on the preparation methods of 2D material is presented. Some of the most interesting results obtained by ARPES are reported in three sections including: graphene, transition metal dichalcogenides (TMDCs) and 2D heterostructures. Graphene has played a key role in ARPES studies because it inspired the use of this technique with other 2D materials. TMDCs are presented for their peculiar transport, optical and spin properties. Finally, the section featuring heterostructures highlights a future direction for research into 2D material structures.

Nanofaceting as a stamp for periodic graphene charge carrier modulations

The exceptional electronic properties of monatomic thin graphene sheets triggered numerous original transport concepts, pushing quantum physics into the realm of device technology for electronics, optoelectronics and thermoelectrics. At the conceptual pivot point is the particular two-dimensional massless Dirac fermion character of graphene charge carriers and its volitional modification by intrinsic or extrinsic means. Here, interfaces between different electronic and structural graphene modifications promise exciting physics and functionality, in particular when fabricated with atomic precision. In this study we show that quasiperiodic modulations of doping levels can be imprinted down to the nanoscale in monolayer graphene sheets. Vicinal copper surfaces allow to alternate graphene carrier densities by several 10(13) carriers per cm(2) along a specific copper high-symmetry direction. The process is triggered by a self-assembled copper faceting process during high-temperature graphene chemical vapor deposition, which defines interfaces between different graphene doping levels at the atomic level.

Cathode lens spectromicroscopy: methodology and applications

The implementation of imaging techniques with low-energy electrons at synchrotron laboratories allowed for significant advancement in the field of spectromicroscopy. The spectroscopic photoemission and low energy electron microscope, SPELEEM, is a notable example. We summarize the multitechnique capabilities of the SPELEEM instrument, reporting on the instrumental aspects and the latest developments on the technical side. We briefly review applications, which are grouped into two main scientific fields. The first one covers different aspects of graphene physics. In particular, we highlight the recent work on graphene/Ir(100). Here, SPELEEM was employed to monitor the changes in the electronic structure that occur for different film morphologies and during the intercalation of Au. The Au monolayer, which creeps under graphene from the film edges, efficiently decouples the graphene from the substrate lowering the Dirac energy from 0.42 eV to 0.1 eV. The second field combines magnetism studies at the mesoscopic length scale with self-organized systems featuring ordered nanostructures. This example highlights the possibility to monitor growth processes in real time and combine chemical characterization with X-ray magnetic circular dichroism-photoemission electron microscopy (XMCD-PEEM) magnetic imaging by using the variable photon polarization and energy available at the synchrotron source.

Laboratory-based real and reciprocal space imaging of the electronic structure of few layer graphene on SiC(0001¯) using photoelectron emission microscopy

We present real and reciprocal space photoelectron emission microscopy (PEEM) results on few layer graphene using laboratory based He I and II radiation. The combination of a focused high-intensity source and high transmission PEEM electron optics provides good signal to noise ratios for the different modes of acquisition. We demonstrate work function mapping and secondary electron analysis, related to the graphene layer thickness, band structure imaging from micron scale regions by wave vector resolved PEEM (k-PEEM) and local secondary electron spectroscopy, giving information on the valence and conduction band states and the dispersion relations of the π bands. Dark field PEEM is done by selecting the Dirac cone corresponding to the specific rotation of each graphene layer and allows spatial mapping of the commensurate rotation angles. The use of He II radiation increases the volume of reciprocal space accessible to k-PEEM and improves signal to background. The preferential linear polarization of the light source is used to investigate aspects of the electronic chirality near the Dirac cone. Recent developments in sample manipulation and cooling are presented.