All-electron GW quasiparticle band structures of group 14 nitride compounds

Au with sp3 Hybridization in Li5AuP2

The achievement of new bonding patterns of atoms in compounds is of great importance, which usually induces interesting physical and chemical properties. Rich oxidation states, diverse bonding types, and unique aurophilic attraction endow gold (Au) as a distinctive element. Here we report that a pressure-induced Li₅AuP₂, identified by a swarm intelligence-based structural prediction, becomes the first example of Au with sp³ hybridization. The most remarkable feature of Li₅AuP₂ is that it contains various frameworks made by AuP₄, AuLi₄, LiP₄, and blende-like Li-P units, exhibiting noncentrosymmetry. The charge transfer from Li to Au makes Au 6p orbitals activate and hybridize with the 6s one. On the other hand, Li donating electrons to P and polar Au-P covalence make the constituent atoms satisfy the octet rule, rendering Li₅AuP₂ with a semiconducting character and a large second-order nonlinear optical response in the near-infrared region. Our work represents a significant step toward extending the understanding of gold chemistry.

Assessment and prediction of band edge locations of nitrides using a self-consistent hybrid functional

Due to their optimal bandgap size and large defect tolerance, nitrides are becoming pivotal materials in several optoelectronic devices, photovoltaics, and photocatalysts. A computational method that can accurately predict their electronic structures is indispensable for exploring new nitride materials. However, the relatively small bandgap of nitrides, which stems from the subtle balance between ionic and covalent bond characteristics, makes conventional density functional theory challenging to achieve satisfactory accuracy. Here, we employed a self-consistent hybrid functional where the Hartree-Fock mixing parameter is self-consistently determined and thus the empiricism of the hybrid functional is effectively removed to calculate the bandgaps of various nitride compounds. By comparing the bandgaps from the self-consistent hybrid functional calculations with the available experimental and high-level GW calculation results, we found that the self-consistent hybrid functional can provide a computationally efficient approach for quantitative predictions of nitride electronic structures with an accuracy level comparable to the GW method. Additionally, we aligned the band edge positions of various nitride compounds using self-consistent hybrid functional calculations, providing material design principles for heterostructures of nitride-based optoelectronic devices. We anticipate the wide use of the self-consistent hybrid functional for accelerating explorations and predictions of new nitride-based functional materials in various photoactive applications.

Metallization and positive pressure dependency of bandgap in solid neon

The metallization of neon remains a controversial problem as there is no consensus in theoretical simulations and no experimental verification. In this work, the insulator-to-metal transition in fcc solid neon at high pressure was revisited with a coupling of the all-electron full-potential linear augmented-plane wave (FP-LAPW) method and the GW correction to avoid the potential unreliability of pseudopotential under high pressure and correct the inaccurate energy gaps caused by local density or generalized gradient approximation of the exchange-correlation. This FP-LAPW + GW calculation predicts that the bandgap closes at a density of 88.3 g/cm³ and a pressure of 208.4 TPa. Moreover, the reported positive pressure dependency of energy gap (increases with increasing density) for solid neon in 1.5-10.0 g/cm³ was confirmed with our FP-LAPW calculations, and the underlying mechanism was first revealed based upon analysis of the charge density distribution and the electron localization function. The results of this research will provide a valuable reference for future high pressure experiments and shed new insight into the planetary interiors.

Pressure-Tuneable Visible-Range Band Gap in the Ionic Spinel Tin Nitride

The application of pressure allows systematic tuning of the charge density of a material cleanly, that is, without changes to the chemical composition via dopants, and exploratory high-pressure experiments can inform the design of bulk syntheses of materials that benefit from their properties under compression. The electronic and structural response of semiconducting tin nitride Sn3 N4 under compression is now reported. A continuous opening of the optical band gap was observed from 1.3 eV to 3.0 eV over a range of 100 GPa, a 540 nm blue-shift spanning the entire visible spectrum. The pressure-mediated band gap opening is general to this material across numerous high-density polymorphs, implicating the predominant ionic bonding in the material as the cause. The rate of decompression to ambient conditions permits access to recoverable metastable states with varying band gaps energies, opening the possibility of pressure-tuneable electronic properties for future applications.

Synthesis of a mixed-valent tin nitride and considerations of its possible crystal structures

Recent advances in theoretical structure prediction methods and high-throughput computational techniques are revolutionizing experimental discovery of the thermodynamically stable inorganic materials. Metastable materials represent a new frontier for these studies, since even simple binary non-ground state compounds of common elements may be awaiting discovery. However, there are significant research challenges related to non-equilibrium thin film synthesis and crystal structure predictions, such as small strained crystals in the experimental samples and energy minimization based theoretical algorithms. Here, we report on experimental synthesis and characterization, as well as theoretical first-principles calculations of a previously unreported mixed-valent binary tin nitride. Thin film experiments indicate that this novel material is N-deficient SnN with tin in the mixed ii/iv valence state and a small low-symmetry unit cell. Theoretical calculations suggest that the most likely crystal structure has the space group 2 (SG2) related to the distorted delafossite (SG166), which is nearly 0.1 eV/atom above the ground state SnN polymorph. This observation is rationalized by the structural similarity of the SnN distorted delafossite to the chemically related Sn3N4 spinel compound, which provides a fresh scientific insight into the reasons for growth of polymorphs of metastable materials. In addition to reporting on the discovery of the simple binary SnN compound, this paper illustrates a possible way of combining a wide range of advanced characterization techniques with the first-principle property calculation methods, to elucidate the most likely crystal structure of the previously unreported metastable materials.

Photoluminescence and electronic transitions in cubic silicon nitride

A spectroscopic study of cubic silicon nitride (γ-Si₃N₄) at cryogenic temperatures of 8 K in the near IR - VUV range of spectra with synchrotron radiation excitation provided the first experimental evidence of direct electronic transitions in this material. The observed photoluminescence (PL) bands were assigned to excitons and excited and centers formed after the electron capture by neutral structural defects. The excitons are weakly quenched on neutral and strongly on charged defects. The fundamental band-gap energy of 5.05 ± 0.05 eV and strong free exciton binding energy ~0.65 eV were determined. The latter value suggests a high efficiency of the electric power transformation in light in defect-free crystals. Combined with a very high hardness and exceptional thermal stability in air, our results indicate that γ-Si₃N₄ has a potential for fabrication of robust and efficient photonic emitters.