Operating single quantum emitters with a compact Stirling cryocooler

Polarization-Selective Enhancement of Telecom Wavelength Quantum Dot Transitions in an Elliptical Bullseye Resonator

Semiconductor quantum dots are promising candidates for the generation of nonclassical light. Coupling a quantum dot to a device capable of providing polarization-selective enhancement of optical transitions is highly beneficial for advanced functionalities, such as efficient resonant driving schemes or applications based on optical cyclicity. Here, we demonstrate broadband polarization-selective enhancement by coupling a quantum dot emitting in the telecom O-band to an elliptical bullseye resonator. We report bright single-photon emission with a degree of linear polarization of 96%, Purcell factor of 3.9 ± 0.6, and count rates up to 3 MHz. Furthermore, we present a measurement of two-photon interference without any external polarization filtering. Finally, we demonstrate compatibility with compact Stirling cryocoolers by operating the device at temperatures up to 40 K. These results represent an important step toward practical integration of optimal quantum dot photon sources in deployment-ready setups.

Temperature-Enhanced Exciton Emission from GaAs Cone-Shell Quantum Dots

The temperature-dependent intensities of the exciton (X) and biexciton (XX) peaks from single GaAs cone-shell quantum dots (QDs) are studied with micro photoluminescence (PL) at varied excitation power and QD size. The QDs are fabricated by filling self-assembled nanoholes, which are drilled in an AlGaAs barrier by local droplet etching (LDE) during molecular beam epitaxy (MBE). This method allows the fabrication of strain-free QDs with sizes precisely controlled by the amount of material deposited for hole filling. Starting from the base temperature T = 3.2 K of the cryostat, single-dot PL measurements demonstrate a strong enhancement of the exciton emission up to a factor of five with increasing T. Both the maximum exciton intensity and the temperature Tx,max of the maximum intensity depend on excitation power and dot size. At an elevated excitation power, Tx,max becomes larger than 30 K. This allows an operation using an inexpensive and compact Stirling cryocooler. Above Tx,max, the exciton intensity decreases strongly until it disappears. The experimental data are quantitatively reproduced by a model which considers the competing processes of exciton generation, annihilation, and recombination. Exciton generation in the QDs is achieved by the sum of direct excitation in the dot, plus additional bulk excitons diffusing from the barrier layers into the dot. The thermally driven bulk-exciton diffusion from the barriers causes the temperature enhancement of the exciton emission. Above Tx,max, the intensity decreases due to exciton annihilation processes. In comparison to the exciton, the biexciton intensity shows only very weak enhancement, which is attributed to more efficient annihilation processes.

Beyond the Four-Level Model: Dark and Hot States in Quantum Dots Degrade Photonic Entanglement

Entangled photon pairs are essential for a multitude of quantum photonic applications. To date, the best performing solid-state quantum emitters of entangled photons are semiconductor quantum dots operated around liquid-helium temperatures. To favor the widespread deployment of these sources, it is important to explore and understand their behavior at temperatures accessible with compact Stirling coolers. Here we study the polarization entanglement among photon pairs from the biexciton-exciton cascade in GaAs quantum dots at temperatures up to ∼65 K. We observe entanglement degradation accompanied by changes in decay dynamics, which we ascribe to thermal population and depopulation of hot and dark states in addition to the four levels relevant for photon pair generation. Detailed calculations considering the presence and characteristics of the additional states and phonon-assisted transitions support the interpretation. We expect these results to guide the optimization of quantum dots as sources of highly entangled photons at elevated temperatures.

Thermal stability of emission from single InGaAs/GaAs quantum dots at the telecom O-band

Single-photon sources are key building blocks in most of the emerging secure telecommunication and quantum information processing schemes. Semiconductor quantum dots (QD) have been proven to be the most prospective candidates. However, their practical use in fiber-based quantum communication depends heavily on the possibility of operation in the telecom bands and at temperatures not requiring extensive cryogenic systems. In this paper we present a temperature-dependent study on single QD emission and single-photon emission from metalorganic vapour-phase epitaxy-grown InGaAs/GaAs QDs emitting in the telecom O-band at 1.3 μm. Micro-photoluminescence studies reveal that trapped holes in the vicinity of a QD act as reservoir of carriers that can be exploited to enhance photoluminescence from trion states observed at elevated temperatures up to at least 80 K. The luminescence quenching is mainly related to the promotion of holes to higher states in the valence band and this aspect must be primarily addressed in order to further increase the thermal stability of emission. Photon autocorrelation measurements yield single-photon emission with a purity of \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${g}_{50K}^{(2)}\left(0\right)=0.13$$\end{document}g50K(2)0=0.13 up to 50 K. Our results imply that these nanostructures are very promising candidates for single-photon sources at elevated (e.g., Stirling cryocooler compatible) temperatures in the telecom O-band and highlight means for improvements in their performance.

Deterministically fabricated solid-state quantum-light sources

The controlled generation of non-classical states of light is a challenging task at the heart of quantum optics. Aside from the mere spirit of science, the related research is strongly driven by applications in photonic quantum technologies, including the fields of quantum communication, quantum computation, and quantum metrology. In this context, the realization of integrated solid-state-based quantum-light sources is of particular interest, due to the prospects for scalability and device integration. This topical review focuses on solid-state quantum-light sources which are fabricated in a deterministic fashion. In this framework we cover quantum emitters represented by semiconductor quantum dots, colour centres in diamond, and defect-/strain-centres in two-dimensional materials. First, we introduce the topic of quantum-light sources and non-classical light generation for applications in photonic quantum technologies, motivating the need for the development of scalable device technologies to push the field towards real-world applications. In the second part, we summarize material systems hosting quantum emitters in the solid-state. The third part reviews deterministic fabrication techniques and comparatively discusses their advantages and disadvantages. The techniques are classified in bottom-up approaches, exploiting the site-controlled positioning of the quantum emitters themselves, and top-down approaches, allowing for the precise alignment of photonic microstructures to pre-selected quantum emitters. Special emphasis is put on the progress achieved in the development of in situ techniques, which significantly pushed the performance of quantum-light sources towards applications. Additionally, we discuss hybrid approaches, exploiting pick-and-place techniques or wafer-bonding. The fourth part presents state-of-the-art quantum-dot quantum-light sources based on the fabrication techniques presented in the previous sections, which feature engineered functionality and enhanced photon collection efficiency. The article closes by highlighting recent applications of deterministic solid-state-based quantum-light sources in the fields of quantum communication, quantum computing, and quantum metrology, and by discussing future perspectives in the field of solid-state quantum-light sources.

A stand-alone fiber-coupled single-photon source

In this work, we present a stand-alone and fiber-coupled quantum-light source. The plug-and-play device is based on an optically driven quantum dot delivering single photons via an optical fiber. The quantum dot is deterministically integrated in a monolithic microlens which is precisely coupled to the core of an optical fiber via active optical alignment and epoxide adhesive bonding. The rigidly coupled fiber-emitter assembly is integrated in a compact Stirling cryocooler with a base temperature of 35 K. We benchmark our practical quantum device via photon auto-correlation measurements revealing g⁽²⁾(0) = 0.07 ± 0.05 under continuous-wave excitation and we demonstrate triggered non-classical light at a repetition rate of 80 MHz. The long-term stability of our quantum light source is evaluated by endurance tests showing that the fiber-coupled quantum dot emission is stable within 4% over several successive cool-down/warm-up cycles. Additionally, we demonstrate non-classical photon emission for a user-intervention-free 100-hour test run and stable single-photon count rates up to 11.7 kHz with a standard deviation of 4%.

Single Quantum Dot with Microlens and 3D-Printed Micro-objective as Integrated Bright Single-Photon Source

Integrated single-photon sources with high photon-extraction efficiency are key building blocks for applications in the field of quantum communications. We report on a bright single-photon source realized by on-chip integration of a deterministic quantum dot microlens with a 3D-printed multilens micro-objective. The device concept benefits from a sophisticated combination of in situ 3D electron-beam lithography to realize the quantum dot microlens and 3D femtosecond direct laser writing for creation of the micro-objective. In this way, we obtain a high-quality quantum device with broadband photon-extraction efficiency of (40 ± 4)% and high suppression of multiphoton emission events with g⁽²⁾(τ = 0) < 0.02. Our results highlight the opportunities that arise from tailoring the optical properties of quantum emitters using integrated optics with high potential for the further development of plug-and-play fiber-coupled single-photon sources.

Highly indistinguishable and strongly entangled photons from symmetric GaAs quantum dots

The development of scalable sources of non-classical light is fundamental to unlocking the technological potential of quantum photonics. Semiconductor quantum dots are emerging as near-optimal sources of indistinguishable single photons. However, their performance as sources of entangled-photon pairs are still modest compared to parametric down converters. Photons emitted from conventional Stranski–Krastanov InGaAs quantum dots have shown non-optimal levels of entanglement and indistinguishability. For quantum networks, both criteria must be met simultaneously. Here, we show that this is possible with a system that has received limited attention so far: GaAs quantum dots. They can emit triggered polarization-entangled photons with high purity (g⁽²⁾(0) = 0.002±0.002), high indistinguishability (0.93±0.07 for 2 ns pulse separation) and high entanglement fidelity (0.94±0.01). Our results show that GaAs might be the material of choice for quantum-dot entanglement sources in future quantum technologies.

Scalable and integratable sources of entangled-photon pairs are an important building block for quantum photonic applications. Here, Huber et al. demonstrate that droplet-etched gallium arsenide quantum dots can emit highly indistinguishable photon pairs with a high degree of entanglement.

Exploring Dephasing of a Solid-State Quantum Emitter via Time- and Temperature-Dependent Hong-Ou-Mandel Experiments

We probe the indistinguishability of photons emitted by a semiconductor quantum dot (QD) via time- and temperature-dependent two-photon interference (TPI) experiments. An increase in temporal separation between consecutive photon emission events reveals a decrease in TPI visibility on a nanosecond time scale, theoretically described by a non-Markovian noise process in agreement with fluctuating charge traps in the QD's vicinity. Phonon-induced pure dephasing results in a decrease in TPI visibility from (96±4)% at 10 K to a vanishing visibility at 40 K. In contrast to Michelson-type measurements, our experiments provide direct access to the time-dependent coherence of a quantum emitter on a nanosecond time scale.