Ionic versus metallic bonding in AlnNam and AlnMgm (m ≤ 3, n + m ≤ 15) clusters

Massive dipoles across the metal-semiconductor cluster interface: towards chemically controlled rectification

An interface between a metallic cluster (MgAl₁₂) and a semiconducting cluster (Re₆Se₈(PMe₃)₅) is shown to be marked by a massive dipole reminiscent of a dipolar layer leading to a Schottky barrier at metal-semiconductor interfaces. The metallic cluster MgAl₁₂ with a valence electron count of 38 electrons is two electrons short of 40 electrons needed to complete its electronic shells in a superatomic model and is marked by a significant electron affinity of 2.99 eV. On the other hand, the metal-chalcogenide semiconducting cluster Re₆Se₈(PMe₃)₅, consisting of a Re₆Se₈ core ligated with five trimethylphosphine ligands, is highly stable in the +2 charge-state owing to its electronic shell closure, and has a low ionization energy of 3.3 eV. The composite cluster Re₆Se₈(PMe₃)₅-MgAl₁₂ formed by combining the MgAl₁₂ cluster through the unligated site of Re₆Se₈(PMe₃)₅ exhibits a massive dipole moment of 28.38 D resulting from a charge flow from Re₆Se₈(PMe₃)₅ to the MgAl₁₂ cluster. The highest occupied molecular orbital (HOMO) of the composite cluster is on the MgAl₁₂ side, which is 0.53 eV below the lowest unoccupied molecular orbital (LUMO) localized on the Re₆Se₈(PMe₃)₅ cluster, reminiscent of a Schottky barrier at metal-semiconductor interfaces. Therefore, the combination can act as a rectifier, and an application of a voltage of approximately 4.1 V via a homogeneous external electric field is needed to overcome the barrier aligning the two states: the HOMO in MgAl₁₂ with the LUMO in Re₆Se₈(PMe₃)₅. Apart from the bias voltage, the barrier can also be reduced by attaching ligands to the metallic cluster, which provides chemical control over rectification. Finally, the fused cluster is shown to be capable of separating electron-hole pairs with minimal recombination, offering the potential for photovoltaic applications.

Density Functional Theory Modeling of Reactions of Addition of H2 Molecules to Magnesium Clusters Mg17M Doped with Atoms M of Transition 3d Elements

Density functional theory calculations of potential energy surface (PES) have been performed for elementary hydrogenation reactions Mg₁₇M + H₂ → Mg₁₇MH₂ of magnesium clusters Mg₁₇M doped by transition 3d metals (M = Ti-Ni), and for consecutive reactions Mg₁₇Ni + nH₂ → Mg₁₇NiH_2n of addition of n hydrogen molecules to Ni-doped clusters Mg₁₇Ni and Mg₁₇NiH₂. Energetic, geometric, and spectroscopic features of intermediates and transition states along the minimum energy pathway have been found, and their trends were analyzed with dopants changing along the 3d series and with increasing number of atoms H attached to the surface positions of the magnesium backbone.

Ligand accommodation causes the anti-centrosymmetric structure of Au13Cu4 clusters with near-infrared emission

We synthesized an [Au₁₃Cu₄(PPh₃)₄(SPy)₈]⁺ nanocluster co-capped by phosphine and thiolate ligands. Interestingly, this Au₁₃Cu₄ cluster corresponds to an anti-centrosymmetric structure with the four copper atoms coordinated to the mixed ligands on the same side of the Au₁₃ icosahedron, which is in sharp contrast to the [Au₁₃Cu₄(PPh₂Py)₄(SPhtBu)₈]⁺ and [Au₁₃Cu₂(PPh₃)₆(SPy)₆]⁺ clusters which possess highly symmetric structures with well-separated Cu adatoms. Both [Au₁₃Cu₄(PPh₃)₄(SPy)₈]⁺ and [Au₁₃Cu₂(PPh₃)₆(SPy)₆]⁺ clusters correspond to 8 valence electron superatoms with large HOMO-LUMO gaps, respectively. The difference in structure is rooted in the nature of the mixed ligands, with the bidentate SPy binding strongly to Cu on both binding sites (-N-Cu and Au-SR-Cu) leading to the co-linking of adjacent Cu atoms, while the bidentate PPh₂Py binds Cu on one site and Au on the other giving rise to a separation of the Cu atoms even in the presence of relatively higher monomer concentration. Both [Au₁₃Cu₄(PPh₃)₄(SPy)₈]⁺ and [Au₁₃Cu₂(PPh₃)₆(SPy)₆]⁺ display emissions in the near-IR regions. TD-DFT calculations reproduce the spectroscopic results with specified excited states, shedding light on the geometric and electronic behaviors of the ligand-protected Au₁₃M_x clusters.

Multiple-Valence Aluminum and the Electronic and Geometric Structure of Al nO m Clusters

Electronic stability in aluminum clusters is typically associated with either closed electronic shells of delocalized electrons or a +3 oxidation state of aluminum. To investigate whether there are alternative routes toward electronic stability in aluminum oxide clusters, we used theoretical methods to examine the geometric and electronic structure of Al _nO _m (2 ≤ n ≤ 7; 1 ≤ m ≤ 10) clusters. Electronically stable clusters with large HOMO-LUMO (highest occupied molecular orbital and lowest unoccupied molecular orbital) gaps were identified and could be grouped into two categories. (1) Al_{2 n}O_{3 n} clusters with a +3 oxidation state on the aluminum and (2) planar clusters including Al₄O₄, Al₅O₃, Al₆O₅, and Al₆O₆. The structures of the planar clusters have external Al atoms bound to a single O atom. Their electronic stability is explained by the multiple-valence Al sites, with the internal Al atoms having an oxidation state of +3, whereas the external Al atoms have an oxidation state of +1.