Comparison of cryogenic low-pass filters

Engineering the microwave to infrared noise photon flux for superconducting quantum systems

Electromagnetic filtering is essential for the coherent control, operation and readout of superconducting quantum circuits at milliKelvin temperatures. The suppression of spurious modes around transition frequencies of a few GHz is well understood and mainly achieved by on-chip and package considerations. Noise photons of higher frequencies - beyond the pair-breaking energies - cause decoherence and require spectral engineering before reaching the packaged quantum chip. The external wires that pass into the refrigerator and go down to the quantum circuit provide a direct path for these photons. This article contains quantitative analysis and experimental data for the noise photon flux through coaxial, filtered wiring. The attenuation of the coaxial cable at room temperature and the noise photon flux estimates for typical wiring configurations are provided. Compact cryogenic microwave low-pass filters with CR-110 and Esorb-230 absorptive dielectric fillings are presented along with experimental data at room and cryogenic temperatures up to 70 GHz. Filter cut-off frequencies between 1 to 10 GHz are set by the filter length, and the roll-off is material dependent. The relative dielectric permittivity and magnetic permeability for the Esorb-230 material in the pair-breaking frequency range of 75 to 110 GHz are measured, and the filter properties in this frequency range are calculated. The estimated dramatic suppression of the noise photon flux due to the filter proves its usefulness for experiments with superconducting quantum systems.

Millikelvin scanning tunneling microscope at 20/22 T with a graphite enabled stick-slip approach and an energy resolution below 8 μeV: Application to conductance quantization at 20 T in single atom point contacts of Al and Au and to the charge density wave of 2H-NbSe2

We describe a scanning tunneling microscope (STM) that operates at magnetic fields up to 22 T and temperatures down to 80 mK. We discuss the design of the STM head, with an improved coarse approach, the vibration isolation system, and efforts to improve the energy resolution using compact filters for multiple lines. We measure the superconducting gap and Josephson effect in aluminum and show that we can resolve features in the density of states as small as 8 μeV. We measure the quantization of conductance in atomic size contacts and make atomic resolution and density of states images in the layered material 2H-NbSe₂. The latter experiments are performed by continuously operating the STM at magnetic fields of 20 T in periods of several days without interruption.

500 microkelvin nanoelectronics

Fragile quantum effects such as single electron charging in quantum dots or macroscopic coherent tunneling in superconducting junctions are the basis of modern quantum technologies. These phenomena can only be observed in devices where the characteristic spacing between energy levels exceeds the thermal energy, k_BT, demanding effective refrigeration techniques for nanoscale electronic devices. Commercially available dilution refrigerators have enabled typical electron temperatures in the 10 to 100 mK regime, however indirect cooling of nanodevices becomes inefficient due to stray radiofrequency heating and weak thermal coupling of electrons to the device substrate. Here, we report on passing the millikelvin barrier for a nanoelectronic device. Using a combination of on-chip and off-chip nuclear refrigeration, we reach an ultimate electron temperature of T_e = 421 ± 35 μK and a hold time exceeding 85 h below 700 μK measured by a self-calibrated Coulomb-blockade thermometer.

Quantum dot thermometry at ultra-low temperature in a dilution refrigerator with a 4He immersion cell

Experiments performed at a temperature of a few millikelvins require effective thermalization schemes, low-pass filtering of the measurement lines, and low-noise electronics. Here, we report on the modifications to a commercial dilution refrigerator with a base temperature of 3.5 mK that enable us to lower the electron temperature to 6.7 mK measured from the Coulomb peak width of a quantum dot gate-defined in an [Al]GaAs heteostructure. We present the design and implementation of a liquid ⁴He immersion cell tight against superleaks, implement an innovative wiring technology, and develop optimized transport measurement procedures.