Stabilization of metallic phases through formation of metallic/semiconducting lateral heterostructures

Covalent functionalization of transition metal dichalcogenides with perylene for light harvesting devices

This study investigates the optical and electronic properties of eight two-dimensional transition metal chalcogenides (TMDs)-MoS2, WS2, MoSe2, WSe2, MoTe2, WTe2, MoO2, and WO2-covalently functionalized with perylene, forming zero-dimensional/two-dimensional hybrid materials. Comprehensive characterization was conducted using techniques including XPS, Raman, EDX, TEM, and AFM. Optical properties were assessed using UV-Vis-NIR absorption and photoluminescence spectroscopy, while electronic properties were examined through cyclic voltammetry and field-effect transistor devices. Notably, the spectroscopic signatures of isolated perylene predominate in the hybrid materials, while WSe2 and MoSe2 displayed a novel band in the near-IR region, and MoTe2 exhibited enhanced conductivity. Perylene significantly boosted absorption between 400-600 nm, leading to remarkable improvements in the photo-response and responsivities showing values exceeding 2 × 105% and 2 × 104 mA W-1, respectively. The presented hybrid materials rival the best examples of non-covalent functionalization, underscoring the potential of covalent functionalization as a powerful technique for further tailoring the optical and electronic properties of 2D materials.

Insulating 6,6-Phenyl-C61-butyric Acid Methyl Ester on Transition-Metal Dichalcogenides: Impact of the Hybrid Materials on the Optical and Electrical Properties

In this study we develop a strategy to insulate 6,6 -Phenyl C61 butyric acid methyl ester (PCBM) on the basal plane of transition metal dichalcogenides (TMDs). Concretely single layers of MoS2, MoSe2, MoTe2, WS2, WSe2 and WTe2 and ultrathin MoO2 and WO2 were grown via chemical vapor deposition (CVD). Then, the thiol group of a PCBM modified with cysteine reacts with the chalcogen vacancies on the basal plane of TMDs, yielding PCBM-MoS2, PCBM-MoSe2, PCBM-WS2, PCBM-WSe2, PCBM-WTe2, PCBM-MoO2 and PCBM-WO2. Afterwards, all the hybrid materials were characterized using several techniques, including XPS, Raman spectroscopy, TEM, AFM, and cyclic voltammetry. Furthermore, PCBM causes a unique optical and electrical impact in every TMDs. For MoS2 devices, the conductivity and photoluminescence (PL) emission achieve a remarkable enhancement of 1700 % and 200 % in PCBM-MoS2 hybrids. Similarly, PCBM-MoTe2 hybrids exhibit a 2-fold enhancement in PL emission at 1.1 eV. On the other hand, PCBM-MoSe2, PCBM-WSe2 and PCBM-WS2 hybrids exhibited a new interlayer exciton at 1.29-1.44, 1.7 and 1.37-154 eV along with an enhancement of the photo-response by 2400, 3200 and 600 %, respectively. Additionally, PCBM-WTe2 and PCBM-WO2 showed a modest photo-response, in sharp contrast with pristine WTe2 or WO2 which archive pure metallic character.

Synthesis and Characterization of Transition Metal Dichalcogenide Nanoribbons Based on a Controllable O2 Etching

Although the synthesis of monolayer transition metal dichalcogenides has been established in the last decade, synthesizing nanoribbons remains challenging. In this study, we have developed a straightforward method to obtain nanoribbons with controllable widths (25-8000 nm) and lengths (1-50 μm) by O₂ etching of the metallic phase in metallic/semiconducting in-plane heterostructures of monolayer MoS₂. We also successfully applied this process for synthesizing WS₂, MoSe₂, and WSe₂ nanoribbons. Furthermore, field-effect transistors of the nanoribbons show an on/off ratio of larger than 1000, photoresponses of 1000%, and time responses of 5 s. The nanoribbons were compared with monolayer MoS₂, highlighting a substantial difference in the photoluminescence emission and photoresponses. Additionally, the nanoribbons were used as a template to build one-dimensional (1D)-1D or 1D-2D heterostructures with various transition metal dichalcogenides. The process developed in this study offers simple production of nanoribbons with applications in several fields of nanotechnology and chemistry.

Field-effect transistor antigen/antibody-TMDs sensors for the detection of COVID-19 samples

We fabricated sensors by modifying the surface of MoS₂ and WS₂ with COVID-19 antibodies and investigated their characteristics, including stability, reusability, sensitivity, and selectivity. Thiols and disulfanes in antibodies strongly interact with vacant Mo or W sites of MoS₂ or WS₂, yielding durable devices that are stable for several days in the air or water. More importantly, detachment of the antibodies is suppressed even during the aggressive cleaning process of the devices at pH 3, which allows reusing the same device in several experiments without appreciable loss of sensitivity. Therefore, the nanodevice may be employed in samples of different patients. Further, we found a limit of detection (LOD) of 1 fg ml^-1 at room temperature, time responses of 1 second, and selectivity against interferences such as KLH protein or Albumin.