Nonlinear heating and scattering in a single crystalline silicon nanostructure

Multipole engineering by displacement resonance: a new degree of freedom of Mie resonance

The canonical studies on Mie scattering unravel strong electric/magnetic optical responses in nanostructures, laying foundation for emerging meta-photonic applications. Conventionally, the morphology-sensitive resonances hinge on the normalized frequency, i.e. particle size over wavelength, but non-paraxial incidence symmetry is overlooked. Here, through confocal reflection microscopy with a tight focus scanning over silicon nanostructures, the scattering point spread functions unveil distinctive spatial patterns featuring that linear scattering efficiency is maximal when the focus is misaligned. The underlying physical mechanism is the excitation of higher-order multipolar modes, not accessible by plane wave irradiation, via displacement resonance, which showcases a significant reduction of nonlinear response threshold, sign flip in all-optical switching, and spatial resolution enhancement. Our result fundamentally extends the century-old light scattering theory, and suggests new dimensions to tailor Mie resonances.

Silicon-based spectrally selective emitters with good high-temperature stability on stepped metasurfaces

Solar thermophotovoltaic (STPV) systems have attracted increasing attention due to their great prospects for breaking the Shockley-Queisser limit. As a critical component of high-performance STPV systems, fabrication of a spectrally selective emitter with good stability at high temperature is one of the main research challenges. In this study, we developed a hybrid silicon-based metasurface emitter with spectral selectivity and high temperature stability using a simple fabrication process by introducing a controlled silicon nitride (SiN_x) layer on a silicon stepped nanopillar substrate coated with molybdenum (Mo). Owing to the cooperative effect of cavity mode resonance and the interference effect of the SiN_x dielectric layer, our proposed silicon-based metasurface emitter achieves a broadband optical absorption of ∼95% in the wavelength range of 220-2000 nm, while effectively suppressing the heat radiation to ∼19% in the long wavelength range (>5 μm). Moreover, polarization-independence and angle-insensitivity behaviors are demonstrated in the emitters. Additionally, due to the presence of a SiN_x protection layer, this silicon-based metasurface emitter is experimentally proved to sustain its excellent spectral properties after ultra-high temperature treatments, including annealing at 1273 K under an Ar atmosphere for 6 h, even at 1073 K in air for 1 h, which makes it an alternative candidate for application in actual STPV systems.