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For: Chen C, He S, Weng H, Zhang W, Zhao L, Liu H, Jia X, Mou D, Liu S, He J, Peng Y, Feng Y, Xie Z, Liu G, Dong X, Zhang J, Wang X, Peng Q, Wang Z, Zhang S, Yang F, Chen C, Xu Z, Dai X, Fang Z, Zhou XJ. Robustness of topological order and formation of quantum well states in topological insulators exposed to ambient environment. Proc Natl Acad Sci U S A 2012;109:3694-8. [PMID: 22355146 DOI: 10.1073/pnas.1115555109] [Citation(s) in RCA: 60] [Impact Index Per Article: 4.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022] Open

For:	Chen C, He S, Weng H, Zhang W, Zhao L, Liu H, Jia X, Mou D, Liu S, He J, Peng Y, Feng Y, Xie Z, Liu G, Dong X, Zhang J, Wang X, Peng Q, Wang Z, Zhang S, Yang F, Chen C, Xu Z, Dai X, Fang Z, Zhou XJ. Robustness of topological order and formation of quantum well states in topological insulators exposed to ambient environment. Proc Natl Acad Sci U S A 2012;109:3694-8. [PMID: 22355146 DOI: 10.1073/pnas.1115555109] [Citation(s) in RCA: 60] [Impact Index Per Article: 4.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022] Open

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