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For: Campisano SU, Foti G, Grasso F, Quercia IF, Rimini E. Depth dependence of angular dips: Measurements and calculations for H+and D+in Si and Ge. ACTA ACUST UNITED AC 2006. [DOI: 10.1080/00337577208231157] [Citation(s) in RCA: 13] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
Number Cited by Other Article(s)
1
Validity of the continuum approximation in calculating the scattering yields for atom location. ACTA ACUST UNITED AC 2006. [DOI: 10.1080/00337577608234779] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
2
Critical channeling angles of low energy ions in silicon. ACTA ACUST UNITED AC 2006. [DOI: 10.1080/00337577608233496] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
3
Chemical trapping and crystalline amorphous transition accompanying energetic proton and deuteron bombardment of silicon and germanium. J Chem Phys 1976. [DOI: 10.1063/1.432151] [Citation(s) in RCA: 27] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022]  Open
4
Channeling dips for outer-shell X-ray yields. ACTA ACUST UNITED AC 1976. [DOI: 10.1016/0029-554x(76)90733-3] [Citation(s) in RCA: 25] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
5
Channeling studies of ion-implanted silicon. ACTA ACUST UNITED AC 1973. [DOI: 10.1080/00337577308232617] [Citation(s) in RCA: 15] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
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