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Citation(s) in
RCA
8
(from Reference Citation Analysis)
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ACTA ACUSTICA UNITED WITH ACUSTICA (6)
PHYSICAL REVIEW. B, CONDENSED MATTER (2)
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For:
Thompson DA
, Walker RS.
Channeling measurements of damage in ion bombarded semiconductors at 50° K.
ACTA ACUST UNITED AC
2006. [DOI:
10.1080/00337577608233514
]
[
Citation(s) in
RCA
: 14
]
[
Impact Index Per Article: 0.8
]
[
Reference Citation Analysis
]
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[Indexed: 10/23/2022]
Number
Cited by Other Article(s)
1
Geist V
, Ascheron C, Flagmeyer R, Ullrich HJ, Stephan D. In-situ determination of lattice expansion in proton-bombarded GaP single crystals.
ACTA ACUST UNITED AC
2006. [DOI:
10.1080/00337578108207133
]
[
Citation(s) in
RCA
: 15
]
[
Impact Index Per Article: 0.8
]
[
Reference Citation Analysis
]
[
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]
[
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[Indexed: 10/23/2022]
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2
Nielsen BB
. Interaction of deuterium with defects in silicon studied by means of channeling.
PHYSICAL REVIEW. B, CONDENSED MATTER
1988;
37
:6353-6367. [PMID:
9943877
DOI:
10.1103/physrevb.37.6353
]
[
Citation(s) in
RCA
: 55
]
[
Impact Index Per Article: 1.5
]
[
Reference Citation Analysis
]
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[Indexed: 04/11/2023]
Abstract
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3
Andersen JU
. Beam-induced annealing of defects in silicon after light-ion implantation at 30 K.
PHYSICAL REVIEW. B, CONDENSED MATTER
1987;
35
:2732-2739. [PMID:
9941749
DOI:
10.1103/physrevb.35.2732
]
[
Citation(s) in
RCA
: 9
]
[
Impact Index Per Article: 0.2
]
[
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[Indexed: 04/11/2023]
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4
Corbett JW
, Karins JP, Tan TY. Ion-induced defects in semiconductors.
ACTA ACUST UNITED AC
1981. [DOI:
10.1016/0029-554x(81)90717-5
]
[
Citation(s) in
RCA
: 142
]
[
Impact Index Per Article: 3.3
]
[
Reference Citation Analysis
]
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[Indexed: 10/27/2022]
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5
Walker RS
, Thompson DA. Contribution of strain effects toward the damage measured in semiconductors by channeling.
ACTA ACUST UNITED AC
1978. [DOI:
10.1080/00337577808240849
]
[
Citation(s) in
RCA
: 10
]
[
Impact Index Per Article: 0.2
]
[
Reference Citation Analysis
]
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[Indexed: 10/23/2022]
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6
Ahmed NAG
, Christodoulides CE, Carter G. Evidence for spike-effects in low energy ar ion bombardment of Si at room temperature.
ACTA ACUST UNITED AC
1978. [DOI:
10.1080/00337577808233231
]
[
Citation(s) in
RCA
: 7
]
[
Impact Index Per Article: 0.2
]
[
Reference Citation Analysis
]
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]
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[Indexed: 10/23/2022]
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7
Carter G
, Armour DG, Donnelly SE, Webb R. Energy spike generation and quenching processesin ion bombardment induced amorphizationof solids.
ACTA ACUST UNITED AC
1978. [DOI:
10.1080/00337577808233164
]
[
Citation(s) in
RCA
: 42
]
[
Impact Index Per Article: 0.9
]
[
Reference Citation Analysis
]
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[Indexed: 10/23/2022]
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8
Thompson DA
, Walker RS, Davies JA. Evidence for spike-effects in low-energy heavy-ion bombardment of Si and Ge.
ACTA ACUST UNITED AC
1977. [DOI:
10.1080/00337577708233066
]
[
Citation(s) in
RCA
: 77
]
[
Impact Index Per Article: 1.6
]
[
Reference Citation Analysis
]
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[Indexed: 10/23/2022]
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