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For: Heidemann KF, Grüner M, te Kaat E. Optical characterization of damage and concentration profiles in H ion implanted amorphous silicon. ACTA ACUST UNITED AC 2006. [DOI: 10.1080/00337578408206088] [Citation(s) in RCA: 15] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]

For:	Heidemann KF, Grüner M, te Kaat E. Optical characterization of damage and concentration profiles in H ion implanted amorphous silicon. ACTA ACUST UNITED AC 2006. [DOI: 10.1080/00337578408206088] [Citation(s) in RCA: 15] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]

Number	Cited by Other Article(s)
1	Custer JS, Snoeks E, Polman A. Photoluminescence of Erbium in Amorphous Silicon: Structural Relaxation and Optical Doping. ACTA ACUST UNITED AC 2011. [DOI: 10.1557/proc-235-51] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022] Abstract ABSTRACTPhotoluminescence of erbium in ion-implanted amorphous Si has been observed after annealing at 400°C. In addition, a broad band of luminescence attributed to intrinsic defects in amorphous Si is present. The background level steadily increases with increasing anneal temperature. The fluorescence lifetimes of either the Er or the background in all samples are ≤150μsec. Collapse Key Words Collapse MESH Headings Collapse Grants Collapse Affiliation(s) Collapse
2	Acco S, Williamson DL, Stolk PA, Saris FW, Sinke WC, Roorda S, Zalm PC. Hydrogen solubility and network stability in amorphous silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1996;53:4415-4427. [PMID: 9983995 DOI: 10.1103/physrevb.53.4415] [Citation(s) in RCA: 30] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023] Abstract Collapse Key Words Collapse MESH Headings Collapse Grants Collapse Affiliation(s) Collapse
3	Roorda S, Sinke WC, Poate JM, Jacobson DC, Dierker S, Dennis BS, Eaglesham DJ, Spaepen F, Fuoss P. Structural relaxation and defect annihilation in pure amorphous silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1991;44:3702-3725. [PMID: 9999999 DOI: 10.1103/physrevb.44.3702] [Citation(s) in RCA: 137] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023] Abstract Collapse Key Words Collapse MESH Headings Collapse Grants Collapse Affiliation(s) Collapse