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For: Foti G, Csepregi L, Kennedy EF, Mayer JW, Pronko PP, Rechtin MD. Dechannelling of MeV He ions by twinned regions in implanted Si crystals. ACTA ACUST UNITED AC 2006. [DOI: 10.1080/01418617808239193] [Citation(s) in RCA: 16] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
Number Cited by Other Article(s)
1
Grob J, Siffert P. Formation of dislocations during high dose boron implantation into silicon. ACTA ACUST UNITED AC 1983. [DOI: 10.1016/0167-5087(83)90832-3] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/25/2022]
2
Charles HK, King RJ, Ariotedjo AP. Measurement techniques in thin film polycrystalline materials and devices (solar cells). ACTA ACUST UNITED AC 1980. [DOI: 10.1016/0379-6787(80)90089-7] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/27/2022]
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