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Vogelsberg E, Griebel J, Engelmann I, Bauer J, Taube F, Corzilius B, Zahn S, Kahnt A, Monakhov KY. Reversible Optical Switching of Polyoxovanadates and Their Communication via Photoexcited States. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2401595. [PMID: 38868906 PMCID: PMC11321688 DOI: 10.1002/advs.202401595] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/14/2024] [Revised: 04/19/2024] [Indexed: 06/14/2024]
Abstract
The 2-bit Lindqvist-type polyoxometalate (POM) [V6O13((OCH2)3CCH2N3)2]2- with a diamagnetic {V6O19} core and azide termini shows six fully oxidized VV centers in solution as well as the solid state, according to 51V NMR spectroscopy. Under UV irradiation, it exhibits reversible switching between its ground S0 state and the energetically higher lying states in acetonitrile and water solutions. TD-DFT calculations demonstrate that this process is mainly initialized by excitation from the S0 to S9 state. Pulse radiolysis transient absorption spectroscopy experiments with a solvated electron point out photochemically induced charge disproportionation of VV into VIV and electron communication between the POM molecules via their excited states. The existence of this unique POM-to-POM electron communication is also indicated by X-ray photoelectron spectroscopy (XPS) studies on gold-metalized silicon wafers (Au//SiO2//Si) under ambient conditions. The amount of reduced vanadium centers in the "confined" environment increases substantially after beam irradiation with soft X-rays compared to non-irradiated samples. The excited state of one POM anion seems to give rise to subsequent electron transfer from another POM anion. However, this reaction is prohibited as soon as the relaxed T1 state of the POM is reached.
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Affiliation(s)
- Eric Vogelsberg
- Leibniz Institute of Surface Engineering (IOM)Permoserstr. 1504318LeipzigGermany
| | - Jan Griebel
- Leibniz Institute of Surface Engineering (IOM)Permoserstr. 1504318LeipzigGermany
| | - Iryna Engelmann
- Leibniz Institute of Surface Engineering (IOM)Permoserstr. 1504318LeipzigGermany
| | - Jens Bauer
- Leibniz Institute of Surface Engineering (IOM)Permoserstr. 1504318LeipzigGermany
| | - Florian Taube
- Institute of Chemistry and Department of LifeLight & MatterUniversity of RostockAlbert‐Einstein‐Str. 25–2718059RostockGermany
| | - Björn Corzilius
- Institute of Chemistry and Department of LifeLight & MatterUniversity of RostockAlbert‐Einstein‐Str. 25–2718059RostockGermany
- Leibniz‐Institute of Catalysis (LIKAT)Albert‐Einstein‐Str. 29a18059RostockGermany
| | - Stefan Zahn
- Leibniz Institute of Surface Engineering (IOM)Permoserstr. 1504318LeipzigGermany
| | - Axel Kahnt
- Leibniz Institute of Surface Engineering (IOM)Permoserstr. 1504318LeipzigGermany
| | - Kirill Yu. Monakhov
- Leibniz Institute of Surface Engineering (IOM)Permoserstr. 1504318LeipzigGermany
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Palii A, Tsukerblat B. Thermal processes in anisotropic metal complexes induced by non-adiabatic switching of magnetic field. Dalton Trans 2024; 53:9161-9170. [PMID: 38742462 DOI: 10.1039/d4dt00723a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/16/2024]
Abstract
In this article we analyze the thermal processes in magnetically anisotropic metal complexes under the action of non-adiabatic switching of magnetic field. Using the non-stationary perturbation theory for the case of sudden perturbation, we show that this field can cause not only heat release, but also heat absorption, interconnected with the axial zero field splitting (parameter D) in a paramagnetic metal complex. As an illustrative example we consider the simplest S = 1-complexes having "easy axis" and "easy plane" types of anisotropy influenced by the magnetic field that is suddenly turned off. We demonstrate that the character of the thermal processes (heat dissipation or absorption) depends on the sign of D and direction of applied field and so the analysis of these processes can be in principle used as a complementary tool (in addition to SQIUD magnetometry, EPR spectroscopy and INS) for studying magnetic anisotropy. The conditions under which the non-adiabatic switching of the magnetic field gives rise to the heat absorption are revealed. This unusual phenomenon, which can be called "nonadiabatic field switching cooling", may have practical applications.
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Affiliation(s)
- Andrew Palii
- Laboratory of Molecular Magnetic Nanomaterials, Federal Research Center of Problems of Chemical Physics and Medicine Chemistry, Chernogolovka, Moscow Region, 142432, Russian Federation.
| | - Boris Tsukerblat
- Department of Chemistry, Ben-Gurion University of the Negev, 84105 Beer-Sheva, Israel.
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Monakhov KY. Oxovanadium electronics for in-memory, neuromorphic, and quantum computing applications. MATERIALS HORIZONS 2024; 11:1838-1842. [PMID: 38334459 DOI: 10.1039/d3mh01926h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/10/2024]
Abstract
Vanadium is a critical raw material. In the nearby future, it may, however, become one of the key elements of computer devices based on two-dimensional arrays of spin qubits for quantum information processing or charge- and resistance-based data memory cells for non-volatile in-memory and neuromorphic computing. The research and development (R&D) of vanadium-containing electronic materials and methods for their responsible fabrication underpins the transition to innovative hybrid semiconductors for energy- and resource-efficient memory and information processing technologies. The combination of standard and emerging solid-state semiconductors with stimuli-responsive oxo complexes of vanadium(IV,V) is envisioned to result in electronics with a new room-temperature device nanophysics, and the ability to modulate and control it at the sub-nanometer level. The development of exponential (Boolean) logics based on the oxovanadium-comprising circuitry and crossbar arrays of individual memristive cells for in-memory computing, the implementation of basic synaptic functions via dynamic electrical pulses for neuromorphic computing, and the readout and control of spin networks and interfaces for quantum computing are strategically important future areas of molecular chemistry and applied physics of vanadium.
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Affiliation(s)
- Kirill Yu Monakhov
- Leibniz Institute of Surface Engineering (IOM), Permoserstr. 15, Leipzig 04318, Germany.
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Wu P, Wang Y, Chen W, Hu X, Huang B, Xiao Z. Structural and Magnetical Studies of Mixed-Valence Hexavanadate Hybrids: How Organic Ligands Affect the Magnetism of Polyoxometalates? Inorg Chem 2021; 60:4347-4351. [PMID: 33739094 DOI: 10.1021/acs.inorgchem.1c00044] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
In this Communication, we illustrate the influence of organic ligands on magnetic structure and behavior by employing a mixed-valence Lindqvist-type hexavanadate as a research platform. Through covalently attaching to different halogen-containing organic ligands, the derived hybrid materials have different magnetism compared to their parent structure. Single-crystal X-ray analyses show that the introduction of organic ligands can modify the crystal packing manners of the derivatives, leading to further changes of the interaction between magnetic units. This work demonstrates that organic functionalization can remarkably affect the magnetism of polyoxometalates by adjusting the distance and location of the magnetic fractions.
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Affiliation(s)
- Pingfan Wu
- Institute of POM-Based Materials, Hubei Provincial Key Laboratory of Green Materials for Light Industry, School of Materials and Chemical Engineering,, Hubei University of Technology, Wuhan 430068, China
| | - Yu Wang
- Institute of POM-Based Materials, Hubei Provincial Key Laboratory of Green Materials for Light Industry, School of Materials and Chemical Engineering,, Hubei University of Technology, Wuhan 430068, China
| | - Weizhou Chen
- Institute of POM-Based Materials, Hubei Provincial Key Laboratory of Green Materials for Light Industry, School of Materials and Chemical Engineering,, Hubei University of Technology, Wuhan 430068, China
| | - Xunliang Hu
- Institute of POM-Based Materials, Hubei Provincial Key Laboratory of Green Materials for Light Industry, School of Materials and Chemical Engineering,, Hubei University of Technology, Wuhan 430068, China
| | - Bo Huang
- Institute of POM-Based Materials, Hubei Provincial Key Laboratory of Green Materials for Light Industry, School of Materials and Chemical Engineering,, Hubei University of Technology, Wuhan 430068, China.,CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Key Lab Standardization & Measurement Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
| | - Zicheng Xiao
- Institute of POM-Based Materials, Hubei Provincial Key Laboratory of Green Materials for Light Industry, School of Materials and Chemical Engineering,, Hubei University of Technology, Wuhan 430068, China
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Moberg C. Symmetry as a Tool for Solving Chemical Problems. BULLETIN OF THE CHEMICAL SOCIETY OF JAPAN 2021. [DOI: 10.1246/bcsj.20200338] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
Affiliation(s)
- Christina Moberg
- Department of Chemistry, Organic Chemistry, KTH Royal Institute of Technology, SE 100 44 Stockholm, Sweden
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Abstract
The effect of the double exchange in a square-planar mixed-valence dn+1−dn+1−dn−dn–type tetramers comprising two excess electrons delocalized over four spin cores is discussed. The detailed analysis of a relatively simple d2−d2−d1−d1–type tetramer shows that in system with the delocalized electronic pair the double exchange is able to produce antiferromagnetic spin alignment. This is drastically different from the customary ferromagnetic effect of the double exchange which is well established for mixed-valence dimers and tetramers with one excess electron or hole. That is why the question “Can double exchange cause antiferromagnetic spin alignment?” became the title of this article. As an answer to this question the qualitative and quantitative study revealed that due to antiparallel directions of spins of the two mobile electrons which give competitive contributions to the overall polarization of spin cores, the system entirely becomes antiferromagnetic. It has been also shown that depending on the relative strength of the second-order double exchange and Heisenberg–Dirac–Van Vleck exchange the system has either the ground localized spin-triplet or the ground delocalized spin-singlet.
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