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Seidman D, Averback R, Okamoto P, Baily A. The Crystalline-To-Amorphous Phase Transition In Irradiated Silicon. ACTA ACUST UNITED AC 2011. [DOI: 10.1557/proc-51-349] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]
Abstract
ABSTRACTThe amorphous(a)-to-crystalline (c) phase transition has been studied in electron(e-) and/or ion irradiated silicon (Si). The irradiations were performed in i n the Argonne High Voltage Microscope-Tandem Facility The irradia ion of Si, at <10 K, with 1-MeV e- to a fluence of 14 dpa failed to induce the c-to-a transition. Whereas an irradiation, at <10 K, with 1.0 or 1.5-MeV Kr+ ions induced the c-to-a transition by a fluence of ≈0.37 dpa. Alternatively a dual irradiation, at 10 K, with 1.0-MeV e and 1.0 or 1.5-MeV Kr+ to a Kr+ fluence of 1.5 dpa -- where the ratio of the displacement rates for e- to ions was ≈0.5--resulted in the Si specimen retaining a degree of crystallinity. These results are discussed in terms of the degree of dispersion of point defects in the primary state of radiation damage and the mobilities of point defects.
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Bartuch U, Karthe W. A generalized overlap-damage model of amorphous phase and point defect generation during ion implantation into silicon. ACTA ACUST UNITED AC 2006. [DOI: 10.1080/01422448208228834] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
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Kalish R, Bernsteins T, Shapiro B, Talmi A. A percolation theory approach to the implantation induced diamond to amorphous-carbon transition. ACTA ACUST UNITED AC 2006. [DOI: 10.1080/00337578008210028] [Citation(s) in RCA: 66] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
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Lohner T, Mezey G, Kótai E, Pászti F, Manuaba A, Gyulai J. Characterization of ion implanted silicon by ellipsometry and channeling. ACTA ACUST UNITED AC 1983. [DOI: 10.1016/0167-5087(83)90857-8] [Citation(s) in RCA: 22] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/27/2022]
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Glaser E, Götz G, Sobolev N, Wesch W. Investigations of Radiation Damage Production in Ion Implanated Silicon. ACTA ACUST UNITED AC 1982. [DOI: 10.1002/pssa.2210690221] [Citation(s) in RCA: 23] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
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