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Vatan Meidanshahi R, Bowden S, Goodnick SM. Electronic structure and localized states in amorphous Si and hydrogenated amorphous Si. Phys Chem Chem Phys 2019; 21:13248-13257. [DOI: 10.1039/c9cp01121h] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/31/2023]
Abstract
Calculated DOS of a-Si:H close to the band gap for different H concentrations in the case of (a) thermodynamic and (b) kinetic H addition.
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Affiliation(s)
| | - Stuart Bowden
- Arizona State University
- School of Electrical
- Computer and Energy Engineering
- Tempe
- USA
| | - Stephen M. Goodnick
- Arizona State University
- School of Electrical
- Computer and Energy Engineering
- Tempe
- USA
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Liao B, Najafi E, Li H, Minnich AJ, Zewail AH. Photo-excited hot carrier dynamics in hydrogenated amorphous silicon imaged by 4D electron microscopy. NATURE NANOTECHNOLOGY 2017; 12:871-876. [PMID: 28674459 DOI: 10.1038/nnano.2017.124] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/21/2016] [Accepted: 05/22/2017] [Indexed: 06/07/2023]
Abstract
Charge carrier dynamics in amorphous semiconductors has been a topic of intense research that has been propelled by modern applications in thin-film solar cells, transistors and optical sensors. Charge transport in these materials differs fundamentally from that in crystalline semiconductors owing to the lack of long-range order and high defect density. Despite the existence of well-established experimental techniques such as photoconductivity time-of-flight and ultrafast optical measurements, many aspects of the dynamics of photo-excited charge carriers in amorphous semiconductors remain poorly understood. Here, we demonstrate direct imaging of carrier dynamics in space and time after photo-excitation in hydrogenated amorphous silicon (a-Si:H) by scanning ultrafast electron microscopy (SUEM). We observe an unexpected regime of fast diffusion immediately after photoexcitation, together with spontaneous electron-hole separation and charge trapping induced by the atomic disorder. Our findings demonstrate the rich dynamics of hot carrier transport in amorphous semiconductors that can be revealed by direct imaging based on SUEM.
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Affiliation(s)
- Bolin Liao
- Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, California 91125, USA
- Kavli Nanoscience Institute, California Institute of Technology, Pasadena, California 91125, USA
| | - Ebrahim Najafi
- Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, California 91125, USA
| | - Heng Li
- Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, California 91125, USA
| | - Austin J Minnich
- Kavli Nanoscience Institute, California Institute of Technology, Pasadena, California 91125, USA
- Division of Engineering and Applied Science, California Institute of Technology, Pasadena, California 91125, USA
| | - Ahmed H Zewail
- Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, California 91125, USA
- Kavli Nanoscience Institute, California Institute of Technology, Pasadena, California 91125, USA
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Ganguly G, Matsuda A. Control of the Electron and Hole Drift mobilities in Plasma Deposited a-Si:H. ACTA ACUST UNITED AC 2011. [DOI: 10.1557/proc-336-7] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]
Abstract
ABSTRACTThe ‘time-of-flight’ technique measured electron and hole drift mobilities are shown to be independent of deposition parameters in capacitively coupled, diode type RF-PECVD a-Si:H. However, the carrier mobilities can be varied by orders of magnitude by changing the bias applied to the mesh type controlling electrode in a triode type reactor. The room temperature hole drift mobility increases to 10−1cm2/Vs when an appropriate bias is applied to the mesh providing optimum energy ion stimulation of the film growth surface during deposition. Analysis of the field and temperature dependences of the drift mobilities shows that in the best specimens the conduction (valence) band tail density of states are approximately exponential with a reciprocal slope of lOMeV (25MeV).
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Murayamaand K, Mori M. Monte Carlo simulation of dispersive transient transport in percolation clusters. ACTA ACUST UNITED AC 2006. [DOI: 10.1080/13642819208207646] [Citation(s) in RCA: 20] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
Affiliation(s)
- Kazuro Murayamaand
- a College of Humanities and Sciences, Nihon University , Sakurajosui, Tokyo 156 , Japan
| | - Mitsunori Mori
- a College of Humanities and Sciences, Nihon University , Sakurajosui, Tokyo 156 , Japan
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Marshall JM, Berkin J, Main C. Calculation of localized-state energy distributions from transient-photoresponse data. ACTA ACUST UNITED AC 2006. [DOI: 10.1080/13642818708220169] [Citation(s) in RCA: 39] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
Affiliation(s)
- J. M. Marshall
- a Department of Materials Engineering , University College Swansea , Singleton Park, Swansea , SA2 8PP , Wales
| | - J. Berkin
- b Department of Physics , Dundee College of Technology , Bell Street, Dundee , DD1 1HG , Scotland
| | - C. Main
- b Department of Physics , Dundee College of Technology , Bell Street, Dundee , DD1 1HG , Scotland
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Longeaud C, Vanderhaghen R. Determination of the density of states of the conduction-band tail in amorphous materials: Application to a-Si1−xGex:H alloys. ACTA ACUST UNITED AC 2006. [DOI: 10.1080/13642819008205526] [Citation(s) in RCA: 16] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
Affiliation(s)
- C. Longeaud
- a Laboratoire de Génie Electrique de Paris (URA DO127 du CNRS), Ecole Supérieure d'Electricité, Plateau du Moulon , 91190, Gif-sur-Yvette , France
| | - R. Vanderhaghen
- b Laboratoire de Physique des Interfaces et Couches Minces (UPR A 0258 du CNRS) , Ecole Polytechnique , 91128, Palaiseau Cedex , France
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Nebel CE, Bauer GH. Tail-state distribution and trapping probability in a-Si:H investigated by time-of-flight experiments and computer simulations. ACTA ACUST UNITED AC 2006. [DOI: 10.1080/13642818908218394] [Citation(s) in RCA: 33] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
Affiliation(s)
- C. E. Nebel
- a Institut für Physikalische Elektronik, Universität Stuttgart , Pfaffenwaldring 47, D-7000, Stuttgart , 80 , F.R. Germany
| | - G. H. Bauer
- a Institut für Physikalische Elektronik, Universität Stuttgart , Pfaffenwaldring 47, D-7000, Stuttgart , 80 , F.R. Germany
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Maschke K, Merk E, Czaja W. Thermalization and radiative recombination of photo-excited carriers in a-Si: H. ACTA ACUST UNITED AC 2006. [DOI: 10.1080/13642818708221332] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
Affiliation(s)
- K. Maschke
- a Ecole Polytechnique Fédérate de Lausanne , Institut de Physique Appliquée , CH-1015, Lausanne , Switzerland
| | - E. Merk
- a Ecole Polytechnique Fédérate de Lausanne , Institut de Physique Appliquée , CH-1015, Lausanne , Switzerland
| | - W. Czaja
- a Ecole Polytechnique Fédérate de Lausanne , Institut de Physique Appliquée , CH-1015, Lausanne , Switzerland
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Han D, Wang K. Dispersive-Transport-Controlled Luminescence in Hydrogenated Amorphous Silicon. PHYSICAL REVIEW LETTERS 1996; 77:4410-4413. [PMID: 10062531 DOI: 10.1103/physrevlett.77.4410] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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Juska G, Arlauskas K, Kocka J, Hoheisel M, Chabloz P. Hot electrons in amorphous silicon. PHYSICAL REVIEW LETTERS 1995; 75:2984-2987. [PMID: 10059459 DOI: 10.1103/physrevlett.75.2984] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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Jakobs A, Kehr KW. Theory and simulation of multiple-trapping transport through a finite slab. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 48:8780-8789. [PMID: 10007093 DOI: 10.1103/physrevb.48.8780] [Citation(s) in RCA: 25] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Han D, Melcher DC, Schiff EA, Silver M. Optical-bias effects in electron-drift measurements and defect relaxation in a-Si:H. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 48:8658-8666. [PMID: 10007079 DOI: 10.1103/physrevb.48.8658] [Citation(s) in RCA: 21] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Wang Q, Antoniadis H, Schiff EA, Guha S. Electron-drift-mobility measurements and exponential conduction-band tails in hydrogenated amorphous silicon-germanium alloys. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 47:9435-9448. [PMID: 10005010 DOI: 10.1103/physrevb.47.9435] [Citation(s) in RCA: 28] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Antoniadis H, Schiff EA. Transient photocharge measurements and electron emission from deep levels in undoped a-Si:H. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 46:9482-9492. [PMID: 10002754 DOI: 10.1103/physrevb.46.9482] [Citation(s) in RCA: 14] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Nebel CE, Street RA, Johnson NM, Kocka J. High-electric-field transport in a-Si:H. I. Transient photoconductivity. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 46:6789-6802. [PMID: 10002381 DOI: 10.1103/physrevb.46.6789] [Citation(s) in RCA: 16] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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16
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Jackson WB, Tsai CC. Hydrogen transport in amorphous silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 45:6564-6580. [PMID: 10000416 DOI: 10.1103/physrevb.45.6564] [Citation(s) in RCA: 45] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Kocka J, Klíma O, Sipek E, Nebel CE, Bauer GH, Jurska G, Hoheisel M. a-Si:H electron drift mobility measured under extremely high electric field. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 45:6593-6600. [PMID: 10000419 DOI: 10.1103/physrevb.45.6593] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Sharma DK, Narasimhan KL, Periasamy N, Bapat DR. Temperature dependence of the electron drift mobility in doped and undoped amorphous silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 44:12806-12808. [PMID: 9999457 DOI: 10.1103/physrevb.44.12806] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Hamed AJ. Persistent photoconductance in doping-modulated and compensated a-Si:H. PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 44:5585-5602. [PMID: 9998398 DOI: 10.1103/physrevb.44.5585] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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20
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Antoniadis H, Schiff EA. Isotropy of drift mobilities in hydrogenated amorphous silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 44:3627-3637. [PMID: 9999990 DOI: 10.1103/physrevb.44.3627] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Antoniadis H, Schiff EA. Nonlinear photocarrier drift in hydrogenated amorphous silicon-germanium alloys. PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 43:13957-13966. [PMID: 9997263 DOI: 10.1103/physrevb.43.13957] [Citation(s) in RCA: 15] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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22
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Overhof H, Silver M. Comment on "Electron drift mobility in doped amorphous silicon". PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 39:10426-10428. [PMID: 9947842 DOI: 10.1103/physrevb.39.10426] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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23
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Seynhaeve GF, Barclay RP, Adriaenssens GJ, Marshall JM. Post-transit time-of-flight currents as a probe of the density of states in hydrogenated amorphous silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 39:10196-10205. [PMID: 9947800 DOI: 10.1103/physrevb.39.10196] [Citation(s) in RCA: 46] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Vanderhaghen R. Electron-transport parameters and tail-state distribution in hydrogenated amorphous silicon obtained from position and tail-state matrix simulation of drift experiments. PHYSICAL REVIEW. B, CONDENSED MATTER 1988; 38:10755-10775. [PMID: 9945932 DOI: 10.1103/physrevb.38.10755] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
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Winer K, Hirabayashi I, Ley L. Distribution of occupied near-surface band-gap states in a-Si:H. PHYSICAL REVIEW. B, CONDENSED MATTER 1988; 38:7680-7693. [PMID: 9945495 DOI: 10.1103/physrevb.38.7680] [Citation(s) in RCA: 33] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
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26
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Dupree R, Smith M. Structural influences on high-resolution yttrium-89 NMR spectra of solids. Chem Phys Lett 1988. [DOI: 10.1016/0009-2614(88)87257-9] [Citation(s) in RCA: 54] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
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Winer K, Hirabayashi I, Ley L. Exponential conduction-band tail in P-doped a-Si:H. PHYSICAL REVIEW LETTERS 1988; 60:2697-2700. [PMID: 10038425 DOI: 10.1103/physrevlett.60.2697] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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28
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Street RA, Hack M, Jackson WB. Mechanisms of thermal equilibration in doped amorphous silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1988; 37:4209-4224. [PMID: 9945059 DOI: 10.1103/physrevb.37.4209] [Citation(s) in RCA: 77] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
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