Phase formation sequences in the silicon-phosphorus system: Determined by in-situ synchrotron and conventional X-ray diffraction measurements and predicted by a theoretical model

Theoretical study on structures and stability of Si2CP isomers

The structures, energetics, spectroscopies, and isomerization of various doublet Si2CP species are explored theoretically. In contrast to the previously studied SiC2N and SiC2P radicals that have linear SiCCN and SiCCP ground states, the title Si2CP radical has a four-membered-ring form cSiSiPC 1 (0.0 kcal/mol) with Si-C cross-bonding as the ground-state isomer at the CCSD(T)/6-311G(2df)//B3LYP/6-311G(d)+ZPVE level, similar to the Si2CN radical. The second low-lying isomer 2 at 11.6 kcal/mol has a SiCSiP four-membered ring with C-P cross-bonding, yet it is kinetically quite unstable toward conversion to 1 with a barrier of 3.5 kcal/mol. In addition, three cyclic species with divalent carbene character, i.e., cSiSiCP 7, 7' with C-P cross-bonding and cSiCSiP 8 with Si-Si cross-bonding, are found to possess considerable kinetic stability, although they are energetically high lying at 44.4, 46.5, and 41.4 kcal/mol, respectively. Moreover, a linear isomer SiCSiP 5 at 44.3 kcal/mol also has considerable kinetic stability and predominantly features the interesting cumulenic /Si=C=Si=P/* form with a slight contribution from the silicon-phosphorus triply bonded form /Si=C*-Si[triple bond]P/. The silicon-carbon triply bonded form *Si[triple bond]C-Si[triple bond]P/ has negligible contribution. All five isomers are expected to be observable in low-temperature environments. Their bonding nature and possible formation strategies are discussed. For relevant species, the QCISD/6-311G(d) and CCSD(T)/6-311+G(2df) (single-point) calculations are performed to provide more reliable results. The calculated results are compared to those of the analogous C3N, C3P, SiC2N, and Si2CN radicals with 17 valence electrons. Implications in interstellar space and P-doped SiC vaporization processes are also discussed.