Recent advances in two-dimensional ferromagnetism: strain-, doping-, structural- and electric field-engineering toward spintronic applications

Charge doping and electric field tunable ferromagnetism and Curie temperature of the MnS2 monolayer

Two-dimensional ferromagnets with a long-range ferromagnetic ordering at finite temperature present a bright prospect for their potential applications in nanoscale spintronic devices. The tuning of their intrinsic ferromagnetism and Curie temperature is essential for the development of next-generation data storage and spintronic devices. In this work, the electronic structures, ferromagnetism and Curie temperature of two-dimensional MnS2 monolayer are controlled by charge doping and electric field using first principles calculations. The results show that the dynamic and thermal stability of monolayer MnS2 for all of the cases can be still maintained. Moreover, there is no existence of phase transition and all MnS2 monolayers at any charge doping concentrations and electric field intensities favor ferromagnetic coupling. For the manipulation of electron doping, the calculated total magnetic moment Mtot of the MnS2 monolayer exhibits an increase from 3.112 to 3.491μB per unit cell. Further analysis indicates that a transition from half-metal to metal occurs by introducing the charge doping and vertical electric field, and the Mn 3d electronic states are the major determinants of ferromagnetism. Additionally, the charge doping enables the magnetic anisotropy energy to transform from an in-plane easy axis to the magnetization direction out of the plane. The Curie temperature Tc of the MnS2 monolayer can be moderately enhanced above room temperature by hole doping and application of a vertical electric field. Remarkably, Tc reaches its peak at 767 K at a hole doping concentration of -0.8e. This work enriches the microscopic understanding of the tuning mechanism of ferromagnetism and supplies a sound theoretical basis for subsequent experimental studies.

Emerging Enhancement and Regulation Strategies for Ferromagnetic 2D Transition Metal Dichalcogenides

Two-dimensional transition metal dichalcogenides (2D TMDs) present promising applications in various fields such as electronics, optoelectronics, memory devices, batteries, superconductors, and hydrogen evolution reactions due to their regulable energy band structures and unique properties. For emerging spintronics applications, materials with excellent room-temperature ferromagnetism are required. Although most transition metal compounds do not possess room-temperature ferromagnetism on their own, they are widely modified by researchers using the emerging strategies to engineer or modulate their intrinsic properties. This paper reviews recent enhancement approaches to induce magnetism in 2D TMDs, mainly using doping, vacancy defects, composite of heterostructures, phase modulation, and adsorption, and also by electron irradiation induction, O plasma treatment, etc. On this basis, the produced effects of these methods for the introduction of magnetism into 2D TMDs are compressively summarized and constructively discussed. For perspective, research on magnetic doping techniques for 2D TMDs materials should be directed toward more reliable and efficient directions, such as exploring advanced design strategies to combine dilute magnetic semiconductors, antiferromagnetic semiconductors, and superconductors to develop new types of heterojunctions; and advancing experimentation strategies to fabricate the designed materials and enable their functionalities with simultaneously pursuing the upscalable growth methods for high-quality monolayers to multilayers.

Pressure-Induced Structural Phase Transition and Enhanced Interlayer Coupling in Two-Dimensional Ferromagnet CrSiTe3

The two-dimensional van der Waals ferromagnetic semiconductor CrSiTe₃ has attracted growing interest as an intrinsic topological magnet. Both superconductivity and enhancement of ferromagnetism, usually competing for orders, have been observed in CrSiTe₃ at high pressure. However, the high-pressure structure of CrSiTe₃ is still unclear, setting obstacles in understanding pressure-induced novel physics. Here, combining the Raman spectra and first-principles calculations, the structure of CrSiTe₃ at high pressure has been clarified. The interlayer breathing mode located at ∼42.1 cm^-1 has been observed for the first time in CrSiTe₃ by ultralow-frequency Raman spectroscopy at high pressure. Theoretical calculations confirm a phase transition from the R3̅ phase to the R3 phase accompanying noticeable enhancement of the Curie temperature. Our results highlight ultralow-frequency Raman spectroscopy combined with high pressure for detecting and modulating the structure and interlayer coupling of two-dimensional materials.

Proximity Coupling of Graphene to a Submonolayer 2D Magnet

Imprinting magnetism into graphene may lead to unconventional electron states and enable the design of spin logic devices with low power consumption. The ongoing active development of 2D magnets suggests their coupling with graphene to induce spin-dependent properties via proximity effects. In particular, the recent discovery of submonolayer 2D magnets on surfaces of industrial semiconductors provides an opportunity to magnetize graphene coupled with silicon. Here, synthesis and characterization of large-area graphene/Eu/Si(001) heterostructures combining graphene with a submonolayer magnetic superstructure of Eu on silicon are reported. Eu intercalation at the interface of the graphene/Si(001) system results in a Eu superstructure different from those formed on pristine Si in terms of symmetry. The resulting system graphene/Eu/Si(001) exhibits 2D magnetism with the transition temperature controlled by low magnetic fields. Negative magnetoresistance and the anomalous Hall effect in the graphene layer provide evidence for spin polarization of the carriers. Most importantly, the graphene/Eu/Si system seeds a class of graphene heterostructures based on submonolayer magnets aiming at applications in graphene spintronics.

Influence of Group-IVA Doping on Electronic and Optical Properties of ZnS Monolayer: A First-Principles Study

Element doping is a universal way to improve the electronic and optical properties of two-dimensional (2D) materials. Here, we investigate the influence of group-ⅣA element (C, Si, Ge, Sn, and Pb) doping on the electronic and optical properties of the ZnS monolayer with a tetragonal phase by using first-principles calculations. The results indicate that the doping atoms tend to form tetrahedral structures with neighboring S atoms. In these doped models, the formation energies are all negative, indicating that the formation processes of the doped models will release energy. The formation energy is smallest for C-doped ZnS and gradually increases with the metallicity of the doping element. The doped ZnS monolayer retains a direct band gap, with this band gap changing little in other element doping cases. Moreover, intermediate states are observed that are induced by the sp³ hybridization from the doping atoms and S atoms. Such intermediate states expand the optical absorption range into the visible spectrum. Our findings provide an in-depth understanding of the electronic and optical properties of the ZnS monolayer and the associated doping structures, which is helpful for application in optoelectronic devices.

Adsorption Mechanism and Electrochemical Characteristic of Methyl Blue onto Calcium Ferrite Nanosheets

A rapid combustion process was applied to prepare CaFe2O4 nanomaterials using CaBr2·xH2O and Fe(NO3)3·9H2O as raw materials and CaFe2O4 nanomaterials were characterized by SEM, TEM, VSM, XRD, and FTIR techniques. The results showed that the prepared nanomaterials had a sheet-like structure, and for larger adsorption capacity of dyes, CaFe2O4 nanosheets prepared at 700°C for 2 h with average grain size was 93.3 nm, a thickness of 8.4 nm, and the saturation magnetization of 8.15 emu/g were employed as adsorbate for the removal of methyl blue (MB). The adsorption performance of MB onto CaFe2O4 nanosheets was investigated; CaFe2O4 nanosheets displayed favorable adsorption capacity, and the adsorption conformed to the pseudo-second-order model and the Freundlich model, which demonstrated that the adsorption process of MB on CaFe2O4 nanosheets belonged to multilayer chemisorption process. When the pH value reached 3, the adsorption capacity of MB by CaFe2O4 nanosheets kept maximum value of 478.07 mg/g; and after 5 regenerations, the removal efficiency of MB was reduced to 59.06% of the first time. The electrochemical behavior of MB onto the nanosheets was evaluated through CV in conjunction with EIS. The CaFe2O4 nanosheets revealed a promising prospect for the adsorption of dyes.

2D magnetic phases of Eu on Ge(110)

2D magnetic materials are at the forefront of research on fundamentals of magnetism; they exhibit unconventional phases and properties controlled by external stimuli. 2D magnets offer a solution to the problem of miniaturization of spintronic devices. A technological target of materials science is to find suitable magnetic materials and scale their thickness down as much as possible, a single monolayer being a natural limit. However, magnetism does not halt at one monolayer - it may persist beyond this boundary, to sparse but regular lattices of magnetic atoms. Here, we report 2D magnetic phases of Eu on the Ge(110) surface. We synthesized two submonolayer structures Eu/Ge(110) employing molecular beam epitaxy. The phases, identified by electron diffraction, differ in the surface density of Eu atoms. At low temperature, they exhibit magnetic ordering with magnetic moments lying in-plane. Strong dependence of the effective magnetic transition temperature on weak magnetic fields points at the 2D nature of the observed magnetism. The results are set against those on the Eu/Si system. The study of Eu/Ge(110) magnets demonstrates that a variety of substrates of different structure and symmetry can host submonolayer 2D magnetic phases, suggesting the phenomenon to be rather general.