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For: Carter AC, Stradling RA, Dean PJ, Skolnick MS. The complex form of donor energy levels in gallium phosphide. ACTA ACUST UNITED AC 2001. [DOI: 10.1088/0022-3719/10/24/029] [Citation(s) in RCA: 39] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
Number Cited by Other Article(s)
1
Fung S, Nicholas RJ. Optical investigations of the states in GaP:Ni. ACTA ACUST UNITED AC 2000. [DOI: 10.1088/0022-3719/15/36/017] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
2
Goldys E, Galtier P, Martinez G, Gorczyca I. Low-temperature infrared absorption of n-type GaP. PHYSICAL REVIEW. B, CONDENSED MATTER 1987;36:9662-9670. [PMID: 9942864 DOI: 10.1103/physrevb.36.9662] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
3
Gell MA, Ninno D, Jaros M, Wolford DJ, Keuch TF, Bradley JA. Effects of alloying and hydrostatic pressure on electronic and optical properties of GaAs-AlxGa1-xAs superlattices and multiple-quantum-well structures. PHYSICAL REVIEW. B, CONDENSED MATTER 1987;35:1196-1222. [PMID: 9941527 DOI: 10.1103/physrevb.35.1196] [Citation(s) in RCA: 47] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
4
Galtier P, Martinez G, Lambert B, Gauneau M. Interacting donors in n-type GaP studied with Raman scattering and ESR techniques. PHYSICAL REVIEW. B, CONDENSED MATTER 1986;33:6909-6915. [PMID: 9938014 DOI: 10.1103/physrevb.33.6909] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
5
Oxygen in gallium phosphide — A canonical deep donor. ACTA ACUST UNITED AC 1983. [DOI: 10.1016/0378-4363(83)90464-3] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/19/2022]
6
Point Defects in GaP, GaAs, and InP. ADVANCES IN ELECTRONICS AND ELECTRON PHYSICS VOLUME 58 1982. [DOI: 10.1016/s0065-2539(08)61022-7] [Citation(s) in RCA: 63] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/04/2023]
7
Dean P. Photoluminescence as a diagnostic of semiconductors. ACTA ACUST UNITED AC 1982. [DOI: 10.1016/0146-3535(82)90010-7] [Citation(s) in RCA: 99] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/26/2022]
8
Bound Excitons in Semiconductors. EXCITONS 1979. [DOI: 10.1007/978-3-642-81368-9_3] [Citation(s) in RCA: 55] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/03/2023]
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