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Zhou N, Zhang Z, Wang F, Li J, Xu X, Li H, Ding S, Liu J, Li X, Xie Y, Yang R, Ma Y, Zhai T. Spin Ordering Induced Broadband Photodetection Based on Two-Dimensional Magnetic Semiconductor α-MnSe. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2202177. [PMID: 35666075 PMCID: PMC9353471 DOI: 10.1002/advs.202202177] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/14/2022] [Revised: 05/05/2022] [Indexed: 06/15/2023]
Abstract
Two-dimensional (2D) magnetic semiconductors are considered to have great application prospects in spintronic logic devices, memory devices, and photodetectors, due to their unique structures and outstanding physical properties in 2D confinement. Understanding the influence of magnetism on optical/optoelectronic properties of 2D magnetic semiconductors is a significant issue for constructing multifunctional electronic devices and implementing sophisticated functions. Herein, the influence of spin ordering and magnons on the optical/optoelectronic properties of 2D magnetic semiconductor α-MnSe synthesized by space-confined chemical vapor deposition (CVD) is explored systematically. The spin-ordering-induced magnetic phase transition triggers temperature-dependent photoluminescence spectra to produce a huge transition at Néel temperature (TN ≈ 160 K). The magnons- and defects-induced emissions are the primary luminescence path below TN and direct internal 4 a T1g →6 A1g transition-induced emissions are the main luminescence path above TN . Additionally, the magnons and defect structures endow 2D α-MnSe with a broadband luminescence from 550 to 880 nm, and an ultraviolet-near-infrared photoresponse from 365 to 808 nm. Moreover, the device also demonstrates improved photodetection performance at 80 K, possibly influenced by spin ordering and trap states associated with defects. These above findings indicate that 2D magnetic semiconductor α-MnSe provides an excellent platform for magneto-optical and magneto-optoelectronic research.
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Affiliation(s)
- Nan Zhou
- School of Advanced Materials and NanotechnologyXidian UniversityXi'an710126P. R. China
- Guangzhou Institute of TechnologyXidian UniversityGuangzhou710068P. R. China
| | - Zhimiao Zhang
- School of Advanced Materials and NanotechnologyXidian UniversityXi'an710126P. R. China
| | - Fakun Wang
- State Key Laboratory of Materials Processing and Die and Mould TechnologySchool of Materials Science and EngineeringHuazhong University of Science and TechnologyWuhan430074P. R. China
- School of Electrical and Electronic EngineeringNanyang Technological UniversitySingapore639798Singapore
| | - Junhao Li
- Institute of Information SensingXidian UniversityXi'an710126P. R. China
| | - Xiang Xu
- State Key Laboratory of Materials Processing and Die and Mould TechnologySchool of Materials Science and EngineeringHuazhong University of Science and TechnologyWuhan430074P. R. China
| | - Haoran Li
- School of Advanced Materials and NanotechnologyXidian UniversityXi'an710126P. R. China
| | - Su Ding
- School of Advanced Materials and NanotechnologyXidian UniversityXi'an710126P. R. China
| | - Jinmei Liu
- School of Advanced Materials and NanotechnologyXidian UniversityXi'an710126P. R. China
| | - Xiaobo Li
- School of Advanced Materials and NanotechnologyXidian UniversityXi'an710126P. R. China
- Guangzhou Institute of TechnologyXidian UniversityGuangzhou710068P. R. China
| | - Yong Xie
- School of Advanced Materials and NanotechnologyXidian UniversityXi'an710126P. R. China
| | - Rusen Yang
- School of Advanced Materials and NanotechnologyXidian UniversityXi'an710126P. R. China
| | - Ying Ma
- State Key Laboratory of Materials Processing and Die and Mould TechnologySchool of Materials Science and EngineeringHuazhong University of Science and TechnologyWuhan430074P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die and Mould TechnologySchool of Materials Science and EngineeringHuazhong University of Science and TechnologyWuhan430074P. R. China
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Atomically Thin 2D van der Waals Magnetic Materials: Fabrications, Structure, Magnetic Properties and Applications. COATINGS 2022. [DOI: 10.3390/coatings12020122] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
Two-dimensional (2D) van der Waals (vdW) magnetic materials are considered to be ideal candidates for the fabrication of spintronic devices because of their low dimensionality, allowing the quantization of electronic states and more degrees of freedom for device modulation. With the discovery of few-layer Cr2Ge2Te6 and monolayer CrI3 ferromagnets, the magnetism of 2D vdW materials is becoming a research focus in the fields of material science and physics. In theory, taking the Heisenberg model with finite-range exchange interactions as an example, low dimensionality and ferromagnetism are in competition. In other words, it is difficult for 2D materials to maintain their magnetism. However, the introduction of anisotropy in 2D magnetic materials enables the realization of long-range ferromagnetic order in atomically layered materials, which may offer new effective means for the design of 2D ferromagnets with high Curie temperature. Herein, current advances in the field of 2D vdW magnetic crystals, as well as intrinsic and induced ferromagnetism or antiferromagnetism, physical properties, device fabrication, and potential applications, are briefly summarized and discussed.
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Huang B, McGuire MA, May AF, Xiao D, Jarillo-Herrero P, Xu X. Emergent phenomena and proximity effects in two-dimensional magnets and heterostructures. NATURE MATERIALS 2020; 19:1276-1289. [PMID: 32948831 DOI: 10.1038/s41563-020-0791-8] [Citation(s) in RCA: 101] [Impact Index Per Article: 25.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/23/2019] [Accepted: 07/30/2020] [Indexed: 05/24/2023]
Abstract
Ultrathin van der Waals materials and their heterostructures offer a simple, yet powerful platform for discovering emergent phenomena and implementing device structures in the two-dimensional limit. The past few years has pushed this frontier to include magnetism. These advances have brought forth a new assortment of layered materials that intrinsically possess a wide variety of magnetic properties and are instrumental in integrating exchange and spin-orbit interactions into van der Waals heterostructures. This Review Article summarizes recent progress in exploring the intrinsic magnetism of atomically thin van der Waals materials, manipulation of their magnetism by tuning the interlayer coupling, and device structures for spin- and valleytronic applications.
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Affiliation(s)
- Bevin Huang
- Department of Physics, University of Washington, Seattle, WA, USA.
| | - Michael A McGuire
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, USA
| | - Andrew F May
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, USA
| | - Di Xiao
- Department of Physics, Carnegie Mellon University, Pittsburgh, PA, USA
| | | | - Xiaodong Xu
- Department of Physics, University of Washington, Seattle, WA, USA.
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, USA.
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Gong C, Zhang X. Two-dimensional magnetic crystals and emergent heterostructure devices. Science 2019; 363:363/6428/eaav4450. [DOI: 10.1126/science.aav4450] [Citation(s) in RCA: 683] [Impact Index Per Article: 136.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
Abstract
Magnetism, originating from the moving charges and spin of elementary particles, has revolutionized important technologies such as data storage and biomedical imaging, and continues to bring forth new phenomena in emergent materials and reduced dimensions. The recently discovered two-dimensional (2D) magnetic van der Waals crystals provide ideal platforms for understanding 2D magnetism, the control of which has been fueling opportunities for atomically thin, flexible magneto-optic and magnetoelectric devices (such as magnetoresistive memories and spin field-effect transistors). The seamless integration of 2D magnets with dissimilar electronic and photonic materials opens up exciting possibilities for unprecedented properties and functionalities. We review the progress in this area and identify the possible directions for device applications, which may lead to advances in spintronics, sensors, and computing.
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Xue Y, Zhang JY, Zhao B, Wei XY, Yang ZQ. Non-Dirac Chern insulators with large band gaps and spin-polarized edge states. NANOSCALE 2018; 10:8569-8577. [PMID: 29693673 DOI: 10.1039/c8nr00201k] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Based on first-principles calculations and k·p models, we demonstrate that PbC/MnSe heterostructures are a non-Dirac type of Chern insulator with very large band gaps (244 meV) and exotically half-metallic edge states, providing the possibilities of realizing very robust, completely spin polarized, and dissipationless spintronic devices from the heterostructures. The achieved extraordinarily large nontrivial band gap can be ascribed to the contribution of the non-Dirac type electrons (composed of px and py) and the very strong atomic spin-orbit coupling (SOC) interaction of the heavy Pb element in the system. Surprisingly, the band structures are found to be sensitive to the different exchange and correlation functionals adopted in the first-principles calculations. Chern insulators with various mechanisms are acquired from them. These discoveries show that the predicted nontrivial topology in PbC/MnSe heterostructures is robust and can be observed in experiments at high temperatures. The system has great potential to have attractive applications in future spintronics.
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Affiliation(s)
- Y Xue
- State Key Laboratory of Surface Physics and Key Laboratory for Computational Physical Sciences (MOE) & Department of Physics, Fudan University, Shanghai 200433, China.
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O'Hara DJ, Zhu T, Trout AH, Ahmed AS, Luo YK, Lee CH, Brenner MR, Rajan S, Gupta JA, McComb DW, Kawakami RK. Room Temperature Intrinsic Ferromagnetism in Epitaxial Manganese Selenide Films in the Monolayer Limit. NANO LETTERS 2018; 18:3125-3131. [PMID: 29608316 DOI: 10.1021/acs.nanolett.8b00683] [Citation(s) in RCA: 182] [Impact Index Per Article: 30.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
Abstract
Monolayer van der Waals (vdW) magnets provide an exciting opportunity for exploring two-dimensional (2D) magnetism for scientific and technological advances, but the intrinsic ferromagnetism has only been observed at low temperatures. Here, we report the observation of room temperature ferromagnetism in manganese selenide (MnSe x) films grown by molecular beam epitaxy (MBE). Magnetic and structural characterization provides strong evidence that, in the monolayer limit, the ferromagnetism originates from a vdW manganese diselenide (MnSe2) monolayer, while for thicker films it could originate from a combination of vdW MnSe2 and/or interfacial magnetism of α-MnSe(111). Magnetization measurements of monolayer MnSe x films on GaSe and SnSe2 epilayers show ferromagnetic ordering with a large saturation magnetization of ∼4 Bohr magnetons per Mn, which is consistent with the density functional theory calculations predicting ferromagnetism in monolayer 1T-MnSe2. Growing MnSe x films on GaSe up to a high thickness (∼40 nm) produces α-MnSe(111) and an enhanced magnetic moment (∼2×) compared to the monolayer MnSe x samples. Detailed structural characterization by scanning transmission electron microscopy (STEM), scanning tunneling microscopy (STM), and reflection high energy electron diffraction (RHEED) reveals an abrupt and clean interface between GaSe(0001) and α-MnSe(111). In particular, the structure measured by STEM is consistent with the presence of a MnSe2 monolayer at the interface. These results hold promise for potential applications in energy efficient information storage and processing.
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Affiliation(s)
- Dante J O'Hara
- Materials Science and Engineering , University of California , Riverside , California 92521 , United States
| | - Tiancong Zhu
- Department of Physics , The Ohio State University , Columbus , Ohio 43210 , United States
| | - Amanda H Trout
- Center for Electron Microscopy and Analysis , The Ohio State University , Columbus , Ohio 43212 , United States
- Department of Materials Science and Engineering , The Ohio State University , Columbus , Ohio 43210 , United States
| | - Adam S Ahmed
- Department of Physics , The Ohio State University , Columbus , Ohio 43210 , United States
| | - Yunqiu Kelly Luo
- Department of Physics , The Ohio State University , Columbus , Ohio 43210 , United States
| | - Choong Hee Lee
- Department of Electrical and Computer Engineering , The Ohio State University , Columbus , Ohio 43210 , United States
| | - Mark R Brenner
- Department of Electrical and Computer Engineering , The Ohio State University , Columbus , Ohio 43210 , United States
- Semiconductor Epitaxy and Analysis Laboratory , The Ohio State University , Columbus , Ohio 43210 , United States
| | - Siddharth Rajan
- Department of Materials Science and Engineering , The Ohio State University , Columbus , Ohio 43210 , United States
- Department of Electrical and Computer Engineering , The Ohio State University , Columbus , Ohio 43210 , United States
| | - Jay A Gupta
- Department of Physics , The Ohio State University , Columbus , Ohio 43210 , United States
| | - David W McComb
- Center for Electron Microscopy and Analysis , The Ohio State University , Columbus , Ohio 43212 , United States
- Department of Materials Science and Engineering , The Ohio State University , Columbus , Ohio 43210 , United States
| | - Roland K Kawakami
- Materials Science and Engineering , University of California , Riverside , California 92521 , United States
- Department of Physics , The Ohio State University , Columbus , Ohio 43210 , United States
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