A model for some defect-related bound exciton lines in the photoluminescence spectrum of GaAs layers grown by molecular beam epitaxy

Defect Engineering in Few-Layer Phosphorene

Defect engineering in 2D phosphorene samples is becoming an important and powerful technique to alter their properties, enabling new optoelectronic applications, particularly at the infrared wavelength region. Defect engineering in a few-layer phosphorene sample via introduction of substrate trapping centers is realized. In a three-layer (3L) phosphorene sample, a strong photoluminescence (PL) emission peak from localized excitons at ≈1430 nm is observed, a much lower energy level than free excitonic emissions. An activation energy of ≈77 meV for the localized excitons is determined in temperature-dependent PL measurements. The relatively high activation energy supports the strong stability of the localized excitons even at elevated temperature. The quantum efficiency of localized exciton emission in 3L phosphorene is measured to be approximately three times higher than that of free excitons. These results could enable exciting applications in infrared optoelectronics.

Exciton Brightening in Monolayer Phosphorene via Dimensionality Modification

Exciton brightening in monolayer phosphorene is achieved via the dimensionality modification of excitons from quasi-1D to 0D. The luminescence quantum yield of 0D-like excitons is >33.6 times larger than that of quasi-1D free excitons. 2D phosphorene with quasi-1D free excitons and 0D-like excitons provides a unique platform to investigate the fundamental phenomena in the ideal 2D-1D-0D hybrid system.

High magnetic field reveals the nature of excitons in a single GaAs/AlAs core/shell nanowire

Magneto-photoluminescence measurements of individual zinc-blende GaAs/AlAs core/shell nanowires are reported. At low temperature, a strong emission line at 1.507 eV is observed under low power (nW) excitation. Measurements performed in high magnetic field allowed us to detect in this emission several lines associated with excitons bound to defect pairs. Such lines were observed before in epitaxial GaAs of very high quality, as reported by Kunzel and Ploog. This demonstrates that the optical quality of our GaAs/AlAs core/shell nanowires is comparable to the best GaAs layers grown by molecular beam epitaxy. Moreover, strong free exciton emission is observed even at room temperature. The bright optical emission of our nanowires in room temperature should open the way for numerous optoelectronic device applications.