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For: Eaves L, Skolnick MS, Halliday DP. Comment on the time-resolved photoluminescence study of MBE-growth-induced defect lines. ACTA ACUST UNITED AC 2000. [DOI: 10.1088/0022-3719/19/20/005] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
Number Cited by Other Article(s)
1
Charbonneau S, Thewalt ML. Optical properties of shallow defect-related acceptors in GaAs grown by molecular-beam epitaxy. PHYSICAL REVIEW. B, CONDENSED MATTER 1990;41:8221-8228. [PMID: 9993145 DOI: 10.1103/physrevb.41.8221] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
2
Charbonneau S, Steiner T, Thewalt ML. Photoluminescence decay times of the defect-induced bound-exciton lines in GaAs grown by molecular-beam epitaxy. PHYSICAL REVIEW. B, CONDENSED MATTER 1990;41:2861-2864. [PMID: 9994052 DOI: 10.1103/physrevb.41.2861] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
3
Skolnick MS, Halliday DP, Tu CW. Zeeman spectroscopy of the defect-induced bound-exciton lines in GaAs grown by molecular-beam epitaxy. PHYSICAL REVIEW. B, CONDENSED MATTER 1988;38:4165-4179. [PMID: 9946791 DOI: 10.1103/physrevb.38.4165] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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