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Chen Y, Gil B, Mathieu H. Exciton et polariton dans les semiconducteurs cubiques : étude de la réflectivité. ACTA ACUST UNITED AC 2004. [DOI: 10.1051/anphys:01987001203010900] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022]
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Rorison J, Herbert DC, Dean PJ, Skolnick MS. A model for the neutral donor bound exciton system in InP at high magnetic field. ACTA ACUST UNITED AC 2000. [DOI: 10.1088/0022-3719/17/35/014] [Citation(s) in RCA: 19] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
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Skolnick MS, Dean PJ. Near-gap energy levels of InP-luminescence and photoconductivity study. ACTA ACUST UNITED AC 2000. [DOI: 10.1088/0022-3719/15/28/018] [Citation(s) in RCA: 25] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
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Holtz PO, Zhao QX, Ferreira AC, Monemar B, Pasquarello A, Sundaram M, Merz JL, Gossard AC. Magneto-optical studies of acceptors confined in GaAs/AlxGa1-xAs quantum wells. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 50:4901-4904. [PMID: 9976807 DOI: 10.1103/physrevb.50.4901] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Sapega VF, Ruf T, Cardona M, Ploog K, Ivchenko EL, Mirlin DN. Resonant Raman scattering due to bound-carrier spin flip in GaAs/AlxGa1-xAs quantum wells. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 50:2510-2519. [PMID: 9976472 DOI: 10.1103/physrevb.50.2510] [Citation(s) in RCA: 22] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Karasyuk VA, Beckett DG, Nissen MK, Villemaire A, Steiner TW, Thewalt ML. Fourier-transform magnetophotoluminescence spectroscopy of donor-bound excitons in GaAs. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:16381-16397. [PMID: 10010789 DOI: 10.1103/physrevb.49.16381] [Citation(s) in RCA: 20] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Ramsbey MT, Szafranek I, Stillman G, Wolfe JP. Optical detection and imaging of nonequilibrium phonons in GaAs using excitonic photoluminescence. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:16427-16440. [PMID: 10010795 DOI: 10.1103/physrevb.49.16427] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Holtz PO, Zhao QX, Monemar B, Sundaram M, Merz JL, Gossard AC. Electronic structure of a shallow acceptor confined in a GaAs/AlxGa1-xAs quantum well. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 47:15675-15678. [PMID: 10005960 DOI: 10.1103/physrevb.47.15675] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Gutowski J, Broser I, Kudlek G. Spectroscopy of bound excitons in cubic ZnS at moderate to high excitation densities. PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 39:3670-3676. [PMID: 9948688 DOI: 10.1103/physrevb.39.3670] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Gutowski J. Excitonic Complexes in Wide-Gap II-VI Semiconductors. GROWTH AND OPTICAL PROPERTIES OF WIDE-GAP II–VI LOW-DIMENSIONAL SEMICONDUCTORS 1989. [DOI: 10.1007/978-1-4684-5661-5_14] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/09/2023]
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Monemar B, Lindefelt U, Chen W. Electronic structure of bound excitons in semiconductors. ACTA ACUST UNITED AC 1987. [DOI: 10.1016/0378-4363(87)90066-0] [Citation(s) in RCA: 32] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
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Chen Y, Gil B, Mathieu H, Lascaray JP. Exciton-polaritons in InP: Magnetoreflectance investigation. PHYSICAL REVIEW. B, CONDENSED MATTER 1987; 36:1510-1518. [PMID: 9942982 DOI: 10.1103/physrevb.36.1510] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
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Arfi B, Masselink WT, Chang YC. Theory of the exciton molecule bound to an isoelectronic impurity in GaP. PHYSICAL REVIEW. B, CONDENSED MATTER 1986; 33:2401-2412. [PMID: 9938576 DOI: 10.1103/physrevb.33.2401] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
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Molva E, Dang LS. Magneto-optical study of Li and Na acceptor bound excitons in CdTe: Fine structure and cubic crystal-field effect. PHYSICAL REVIEW. B, CONDENSED MATTER 1985; 32:1156-1164. [PMID: 9937127 DOI: 10.1103/physrevb.32.1156] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
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Lösch K, Fischbach JU. Measurement of high near-edge absorption coefficients in surface layers of InP. ACTA ACUST UNITED AC 1976. [DOI: 10.1002/pssa.2210330204] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
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