ZnO nanorod ultraviolet photodetector on porous silicon substrate

Fabrication and Characterization of High-Quality UV Photodetectors Based ZnO Nanorods Using Traditional and Modified Chemical Bath Deposition Methods

Ultraviolet (UV) photodetectors (PDs) based on high-quality well-aligned ZnO nanorods (NRs) were fabricated using both modified and conventional chemical bath deposition (CBD) methods. The modified chemical bath deposition (M-CBD) method was made by adding air bubbles to the growth solution during the CBD process. The viability and effectiveness of M-CBD were examined by developing UV PDs based on ZnO NRs. The ZnO nano-seed layer was coated on a glass substrate utilizing radiofrequency (RF) sputtering. The impact of the different growth-times on morphology, growth rate, crystal structure, and optical and chemical properties were investigated systematically using different characterization techniques, such as field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD) analysis, UV–VIS double beam spectrometer, and energy dispersive X-ray analysis (EDX), respectively. The Al/ZnO UV PDs based on ZnO nanorods were fabricated with optimum growth conditions through the two methods of preparation. This study showed that the synthesized ZnO NRs using the M-CBD method for different growth times possess better properties than the conventional method under similar deposition conditions. Despite having the highest aspect ratio and growth rate of ZnO NRs, which were found at 4 h growth duration for both methods, the aspect ratio of ZnO NRs using the M-CBD technique was comparatively higher than the conventional CBD method. Besides, the UV PDs fabricated by the M-CBD method at 5 V bias voltage showed high sensitivity, short response time, quick recovery time, high gain, low dark current, and high photocurrent compared with the UV PD device fabricated by the conventional CBD method.

High-Performance Flexible Ultraviolet (UV) Phototransistor Using Hybrid Channel of Vertical ZnO Nanorods and Graphene

A flexible ultraviolet (UV) photodetector based on ZnO nanorods (NRs) as nanostructure sensing materials integrated into a graphene (Gr) field-effect transistor (FET) platform is investigated with high performance. Based on the negative shift of the Dirac point (VDirac) in the transfer characteristics of a phototransistor, high-photovoltage responsivity (RV) is calculated with a maximum value of 3 × 10(8) V W(-1). The peak response at a wavelength of ∼365 nm indicated excellent selectivity to UV light. The phototransistor also allowed investigation of the photocurrent responsivity (RI) and photoconductive gain (G) at various gate voltages, with maximum values of 2.5 × 10(6) A W(-1) and 8.3 × 10(6), respectively, at a gate bias of 5 V. The UV response under bending conditions was virtually unaffected and was unchanged after 10,000 bending cycles at a bending radius of 12 mm, subject to a strain of 0.5%. The attributes of high stability, selectivity, and sensitivity of this flexible UV photodetector based on a ZnO NRs/Gr hybrid FET indicate promising potential for future flexible optoelectronic devices.

Growth of Aligned ZnO Nanorods Grown on Polyethylene Naphthalate Substrates: Effect of the Growth Duration

Aligned ZnO nanorods were synthesized on a polyethylene naphthalate (PEN) substrates using a chemical bath deposition method. The growth temperature and precursor concentration were 95 °C and 0.025 M, respectively. The effects of growth duration (2 h to 8 h) on the optical and structural properties of the obtained ZnO nanorods on seed layer ZnO/PEN substrate were then investigated using X-ray diffraction, field-emission scanning electron microscopy (FESEM), and photoluminescence (PL) spectroscopy at room temperature. The high intensity of (002) peak compared with (100) and (101) in the X-ray diffraction (XRD) pattern demonstrated that the ZnO nanorods grown for 6.5 h had more vertical higher crystal quality than the samples grown for other durations. The average diameter of ZnO nanorods grown on PEN substrates increased from 19 nm to 45 nm with increased growth duration from 2 h to 8 h, respectively.