Effect of oxygen content on the transport properties of LaTiO(3+β/2) thin films

Tailoring Materials for Mottronics: Excess Oxygen Doping of a Prototypical Mott Insulator

The Mott transistor is a paradigm for a new class of electronic devices-often referred to by the term Mottronics-which are based on charge correlations between the electrons. Since correlation-induced insulating phases of most oxide compounds are usually very robust, new methods have to be developed to push such materials right to the boundary to the metallic phase in order to enable the metal-insulator transition to be switched by electric gating. Here, it is demonstrated that thin films of the prototypical Mott insulator LaTiO₃ grown by pulsed laser deposition under oxygen atmosphere are readily tuned by excess oxygen doping across the line of the band-filling controlled Mott transition in the electronic phase diagram. The detected insulator to metal transition is characterized by a strong change in resistivity of several orders of magnitude. The use of suitable substrates and capping layers to inhibit oxygen diffusion facilitates full control of the oxygen content and renders the films stable against exposure to ambient conditions. These achievements represent a significant advancement in control and tuning of the electronic properties of LaTiO_3+x thin films making it a promising channel material in future Mottronic devices.

The role of magnetoelastic strain on orbital control and transport properties in an LaTiO(3)-CoFe(2)O(4) heterostructure

Epitaxial heterostructures of CoFe(2)O(4)/LaTiO(3)/LaAlO(3) have been successfully prepared by using the pulsed laser deposition technique. The magnetoresistance (MR) of the samples is negative and linear with field at H≥2 T, exhibiting no dependence on field directions. Nevertheless, when H<2 T, the MR is negative in a field parallel to the sample plane, but positive in that along the film normal. This novel observed anisotropic MR is explained in terms of the magnetic anisotropy in the ferrimagnetic layer, as well as the magnetoelastic coupling between the two. In fields of different directions, the top CoFe(2)O(4) layer contracts or expands in the sample plane due to the significant magnetostriction effect, changing its resistance accordingly and exerting compressive or tensile strains on the bottom LaTiO(3) layer. Apparently the orbital status and the one-electron bandwidth in the LaTiO(3) layer are altered, which leads to a change in resistance.