Hayamizu Y, Yoshita M, Takahashi Y, Akiyama H, Ning CZ, Pfeiffer LN, West KW. Biexciton gain and the Mott transition in GaAs quantum wires.
PHYSICAL REVIEW LETTERS 2007;
99:167403. [PMID:
17995291 DOI:
10.1103/physrevlett.99.167403]
[Citation(s) in RCA: 5] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/02/2006] [Indexed: 05/22/2023]
Abstract
Optical gain and the Mott transition in GaAs quantum wires were studied via simultaneous measurements of absorption and photoluminescence (PL). We observed well-separated PL peaks assigned to excitons (X) and biexcitons (XX) even at densities where optical gain existed. A sharp optical gain first appeared when the XX peak overtook the X peak, indicating the gain origin of biexciton-exciton population inversion. The XX peak eventually changed to a broad peak of plasma, and a broad gain due to plasma was observed as the Mott transition was completed.
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