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Unger WES, Senoner M, Stockmann JM, Fernandez V, Fairley N, Passiu C, Spencer ND, Rossi A. Summary of ISO/TC 201 International Standard ISO 18516:2019 Surface chemical analysis—Determination of lateral resolution and sharpness in beam‐based methods with a range from nanometres to micrometres and its implementation for imaging laboratory X‐ray photoelectron spectrometers (XPS). SURF INTERFACE ANAL 2021. [DOI: 10.1002/sia.7025] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/30/2023]
Affiliation(s)
- Wolfgang E. S. Unger
- Surface Analysis & Interfacial Chemistry Bundesanstalt für Materialforschung und ‐prüfung (BAM) Berlin Germany
| | - Mathias Senoner
- Surface Analysis & Interfacial Chemistry Bundesanstalt für Materialforschung und ‐prüfung (BAM) Berlin Germany
| | - Jörg M. Stockmann
- Surface Analysis & Interfacial Chemistry Bundesanstalt für Materialforschung und ‐prüfung (BAM) Berlin Germany
| | - Vincent Fernandez
- Service d'analyse de surface Institut des Matériaux Jean Rouxel (IMN) Nantes Cedex 3 France
| | | | - Cristiana Passiu
- Laboratory for Surface Science and Technology, Department of Materials ETH Zurich Zürich Switzerland
| | - Nicholas D. Spencer
- Laboratory for Surface Science and Technology, Department of Materials ETH Zurich Zürich Switzerland
| | - Antonella Rossi
- Laboratory for Surface Science and Technology, Department of Materials ETH Zurich Zürich Switzerland
- Dipartimento di Scienze Chimiche e Geologiche Università di Cagliari Monserrato (Cagliari) Italy
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Røst HI, Reed BP, Strand FS, Durk JA, Evans DA, Grubišić-Čabo A, Wan G, Cattelan M, Prieto MJ, Gottlob DM, Tănase LC, de Souza Caldas L, Schmidt T, Tadich A, Cowie BCC, Chellappan RK, Wells JW, Cooil SP. A Simplified Method for Patterning Graphene on Dielectric Layers. ACS APPLIED MATERIALS & INTERFACES 2021; 13:37510-37516. [PMID: 34328712 PMCID: PMC8365599 DOI: 10.1021/acsami.1c09987] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/29/2021] [Accepted: 07/13/2021] [Indexed: 06/13/2023]
Abstract
The large-scale formation of patterned, quasi-freestanding graphene structures supported on a dielectric has so far been limited by the need to transfer the graphene onto a suitable substrate and contamination from the associated processing steps. We report μm scale, few-layer graphene structures formed at moderate temperatures (600-700 °C) and supported directly on an interfacial dielectric formed by oxidizing Si layers at the graphene/substrate interface. We show that the thickness of this underlying dielectric support can be tailored further by an additional Si intercalation of the graphene prior to oxidation. This produces quasi-freestanding, patterned graphene on dielectric SiO2 with a tunable thickness on demand, thus facilitating a new pathway to integrated graphene microelectronics.
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Affiliation(s)
- Håkon I. Røst
- Center
for Quantum Spintronics, Department of Physics, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway
| | - Benjamen P. Reed
- Department
of Physics, Aberystwyth University, Aberystwyth SY23 3BZ, United Kingdom
| | - Frode S. Strand
- Center
for Quantum Spintronics, Department of Physics, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway
| | - Joseph A. Durk
- Department
of Physics, Aberystwyth University, Aberystwyth SY23 3BZ, United Kingdom
| | - D. Andrew Evans
- Department
of Physics, Aberystwyth University, Aberystwyth SY23 3BZ, United Kingdom
| | - Antonija Grubišić-Čabo
- School
of Physics & Astronomy, Monash University, 1 Wellington Rd., Clayton, Victoria 3800, Australia
| | - Gary Wan
- School
of Physics, HH Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL, United Kingdom
| | - Mattia Cattelan
- School
of Chemistry, University of Bristol, Cantocks Close, Bristol BS8 1TS, United
Kingdom
| | - Mauricio J. Prieto
- Department
of Interface Science, Fritz-Haber-Institute
of the Max-Planck Society, Faradayweg 4-6, 14195 Berlin, Germany
| | - Daniel M. Gottlob
- Department
of Interface Science, Fritz-Haber-Institute
of the Max-Planck Society, Faradayweg 4-6, 14195 Berlin, Germany
| | - Liviu C. Tănase
- Department
of Interface Science, Fritz-Haber-Institute
of the Max-Planck Society, Faradayweg 4-6, 14195 Berlin, Germany
| | - Lucas de Souza Caldas
- Department
of Interface Science, Fritz-Haber-Institute
of the Max-Planck Society, Faradayweg 4-6, 14195 Berlin, Germany
| | - Thomas Schmidt
- Department
of Interface Science, Fritz-Haber-Institute
of the Max-Planck Society, Faradayweg 4-6, 14195 Berlin, Germany
| | - Anton Tadich
- Australian
Synchrotron, 800 Blackburn
Rd., Clayton, Victoria 3168, Australia
| | - Bruce C. C. Cowie
- Australian
Synchrotron, 800 Blackburn
Rd., Clayton, Victoria 3168, Australia
| | - Rajesh Kumar Chellappan
- Center
for Quantum Spintronics, Department of Physics, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway
| | - Justin W. Wells
- Center
for Quantum Spintronics, Department of Physics, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway
- Semiconductor
Physics, Department of Physics, University
of Oslo (UiO), NO-0371 Oslo, Norway
| | - Simon P. Cooil
- Department
of Physics, Aberystwyth University, Aberystwyth SY23 3BZ, United Kingdom
- Semiconductor
Physics, Department of Physics, University
of Oslo (UiO), NO-0371 Oslo, Norway
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Senoner M, Maassdorf A, Rooch H, Österle W, Malcher M, Schmidt M, Kollmer F, Paul D, Hodoroaba VD, Rades S, Unger WES. Lateral resolution of nanoscaled images delivered by surface-analytical instruments: application of the BAM-L200 certified reference material and related ISO standards. Anal Bioanal Chem 2014; 407:3211-7. [PMID: 25213216 DOI: 10.1007/s00216-014-8135-7] [Citation(s) in RCA: 22] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/11/2014] [Revised: 08/22/2014] [Accepted: 08/25/2014] [Indexed: 11/30/2022]
Abstract
The certified reference material BAM-L200, a nanoscale stripe pattern for length calibration and specification of lateral resolution, is described. BAM-L200 is prepared from a cross-sectioned epitaxially grown layer stack of AlxGa1-xAs and InxGa1-xAs on a GaAs substrate. The surface of BAM-L200 provides a flat pattern with stripe widths ranging down to 1 nm. Calibration distances, grating periods and stripe widths have been certified by TEM with traceability to the length unit. The combination of gratings, isolated narrow stripes and sharp edges of wide stripes offers plenty of options for the determination of lateral resolution, sharpness and calibration of length scale at selected settings of imaging surface-analytical instruments. The feasibility of the reference material for an analysis of the lateral resolution is demonstrated in detail by evaluation of ToF-SIMS, AES and EDX images. Other applications developed in the community are summarized, too. BAM-L200 fully supports the implementation of the revised International Standard ISO 18516 (in preparation) which is based on knowledge outlined in the Technical Report ISO/TR 19319:2013.
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Affiliation(s)
- M Senoner
- BAM Bundesanstalt für Materialforschung und -prüfung, 12200, Berlin, Germany
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Borowik L, Lepage H, Chevalier N, Mariolle D, Renault O. Measuring the lifetime of silicon nanocrystal solar cell photo-carriers by using Kelvin probe force microscopy and x-ray photoelectron spectroscopy. NANOTECHNOLOGY 2014; 25:265703. [PMID: 24916454 DOI: 10.1088/0957-4484/25/26/265703] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
We report the first measurements of photo-carrier lifetimes in silicon nanocrystal-based third generation solar cells by Kelvin force microscopy and x-ray photoelectron spectroscopy under modulated frequency light illumination. A high concentration of active defects at the interface between the nanocrystals and silicon oxide matrix may be passivated by annealing under hydrogen. We found that the carrier lifetime, τ, is τ = 7 × 10(-5) s and τ = 3.5 × 10(-5) s within 10% accuracy for the hydrogen passivated and non-passivated nanocrystals, respectively. We used an exponential model to confirm the experimental potential measurements and to estimate photo-carrier lifetimes.
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Affiliation(s)
- L Borowik
- CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 GRENOBLE Cedex 9, France
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