Raman scattering and isotopic phonon effects in dodecaborides

High-pressure synthesis of fully sp2-hybridized polymeric nitrogen layer in potassium supernitride

Searching for fully sp²-hybridized layered structures is of fundamental importance because of their fascinating physical properties and potential to host topologically non-trivial electronic states. However, the synthesis of fully sp²-hybridized layered polymeric nitrogen structures remains a challenging work because of their low stability. Here, we report the synthesis of a fully sp²-hybridized layered polymeric nitrogen structure featuring fused 18-membered rings in potassium supernitride (K₂N₁₆) under high-pressure and high-temperature conditions. Bader charge analysis reveals that the potassium atomic layer stabilizes the unique sp²-hybridized polymeric nitrogen layers through the charge transfer effect in K₂N₁₆. The calculation of electronic structure indicates that K₂N₁₆ is a topological semimetal with multiple Dirac points and hosts higher-order Dirac fermions with cubic dispersion, which are contributed by the sp²-hybridized polymeric nitrogen layers arranged in P6/mcc symmetry. The high-pressure synthesis of the fully sp²-hybridized polymeric nitrogen layered structure provides promising prospects for exploring novel topological materials with effective stabilization routes.

Hall Effect Anisotropy in the Paramagnetic Phase of Ho0.8Lu0.2B12 Induced by Dynamic Charge Stripes

A detailed study of charge transport in the paramagnetic phase of the cage-cluster dodecaboride Ho0.8Lu0.2B12 with an instability both of the fcc lattice (cooperative Jahn−Teller effect) and the electronic structure (dynamic charge stripes) was carried out at temperatures 1.9−300 K in magnetic fields up to 80 kOe. Four mono-domain single crystals of Ho0.8Lu0.2B12 samples with different crystal axis orientation were investigated in order to establish the singularities of Hall effect, which develop due to (i) the electronic phase separation (stripes) and (ii) formation of the disordered cage-glass state below T*~60 K. It was demonstrated that a considerable intrinsic anisotropic positive component ρanxy appears at low temperatures in addition to the ordinary negative Hall resistivity contribution in magnetic fields above 40 kOe applied along the [001] and [110] axes. A relation between anomalous components of the resistivity tensor ρanxy~ρanxx1.7 was found for H||[001] below T*~60 K, and a power law ρanxy~ρanxx0.83 for the orientation H||[110] at temperatures T < TS~15 K. It is argued that below characteristic temperature TS~15 K the anomalous odd ρanxy(T) and even ρanxx(T) parts of the resistivity tensor may be interpreted in terms of formation of long chains in the filamentary structure of fluctuating charges (stripes). We assume that these ρanxy(H||[001]) and ρanxy(H||[110]) components represent the intrinsic (Berry phase contribution) and extrinsic (skew scattering) mechanism, respectively. Apart from them, an additional ferromagnetic contribution to both isotropic and anisotropic components in the Hall signal was registered and attributed to the effect of magnetic polarization of 5d states (ferromagnetic nano-domains) in the conduction band of Ho0.8Lu0.2B12.

Low-temperature infrared spectroscopy of the strongly correlated semiconductor Tm0.19Yb0.81B12with dynamic charge stripes

Tm_1-xYb_xB₁₂dodecaborides represent model objects for the studies of quantum critical behavior, metal-insulator transitions (MITs) and complex charge-spin-orbital-phonon coupling phenomena. In spite of intensive investigations, the mechanism of semiconducting ground state formation both in YbB₁₂and in the Yb-based strongly correlated electron systems remains a subject of active debates. We have performed first systematic measurements of temperature-dependent spectra of infrared conductivity of Tm_0.19Yb₈₁B₁₂at frequencies 40-35 000 cm^-1and in the temperature range 10-300 K. Analysis of the temperature evolution of the observed absorption resonances is performed allowing to associate these with the cooperative dynamic Jahn-Teller instability of the boron sub-lattice. This ferrodistortive effect of B₁₂-complexes induces the rattling modes of the rare earth ions leading to emergence of both the intra-gap mixed-type collective excitations and the dynamic charge stripes. We estimate the temperature-dependent effective mass of charge carriers and propose the scenario of transformation of the many-body states in the multiple relaxation channels. We attribute the MIT to the localization of electrons at the vibrationally coupled Yb-Yb pairs, which is accompanied by the electronic phase separation and formation of the nanoscale filamentary structure of electron density (stripes) in Tm_1-xYb_xB₁₂compounds.

Insight into the Crystal Structures and Physical Properties of the Uranium Borides UB1.78±0.02, UB3.61±0.041 and UB11.19±0.13

In this study we reported the synthesis of three polycrystalline uranium borides UB1.78±0.02, UB3.61±0.041, and UB11.19±0.13 and their analyses using chemical analysis, X-ray diffraction, SQUID magnetometry, solid-state NMR, and Fourier transformed infrared spectroscopy. We discuss the effects of stoichiometry deviations on the lattice parameters and magnetic properties. We also provide their static and MAS-NMR spectra showing the effects of the 5f-electrons on the 11B shifts. Finally, the FTIR measurements showed the presence of a local disorder.

Pressure-Dependent Behavior of Defect-Modulated Band Structure in Boron Arsenide

The recent observation of unusually high thermal conductivity exceeding 1000 W m^-1 K^-1 in single-crystal boron arsenide (BAs) has led to interest in the potential application of this semiconductor for thermal management. Although both the electron/hole high mobilities have been calculated for BAs, there is a lack of experimental investigation of its electronic properties. Here, a photoluminescence (PL) measurement of single-crystal BAs at different temperatures and pressures is reported. The measurements reveal an indirect bandgap and two donor-acceptor pair (DAP) recombination transitions. Based on first-principles calculations and time-of-flight secondary-ion mass spectrometry results, the two DAP transitions are confirmed to originate from Si and C impurities occupying shallow energy levels in the bandgap. High-pressure PL spectra show that the donor level with respect to the conduction band minimum shrinks with increasing pressure, which affects the release of free carriers from defect states. These findings suggest the possibility of strain engineering of the transport properties of BAs for application in electronic devices.

Effect of concentrated light on morphology and vibrational properties of boron and tantalum mixtures

Heating a mixture of boron (impurities: carbon ∼ B₅₀C₂, boric acid - H₃BO₃) and tantalum (Ta) powders in nitrogen flow in a xenon high-flux optical furnace was performed. As-received powder composed of h-BN, H₃BO₃, TaB₂, B₉H₁₁ and a number of other phases including β-rhombohedral boron, apparently, heavily doped with Ta. FT-IR examination of any sample of the material reveals the complicated vibration spectrum containing, in particular, an absorption band near 2260 cm^-1. The shapes of these bands are different for samples because powders were synthesized at different temperatures. Known, that in β-rhombohedral boron lattice, there are nano-sized voids of different types, which allow an accommodation of single atoms or small groups of atoms. Theoretical calculations performed by the method of quasi-classical type yields the same value, 2260 cm^-1, for the vibrations frequency of Ta atoms in D-type crystallographic voids in β-rhombohedral boron lattice. Since, Ta atoms are known to prefer accommodation just in D-voids the experimentally detected bands can be identified with localized vibrations of Ta atoms.

Rediscovering the Crystal Chemistry of Borides

For decades, borides have been primarily studied as crystallographic oddities. With such a wide variety of structures (a quick survey of the Inorganic Crystal Structure Database counts 1253 entries for binary boron compounds!), it is surprising that the applications of borides have been quite limited despite a great deal of fundamental research. If anything, the rich crystal chemistry found in borides could well provide the right tool for almost any application. The interplay between metals and the boron results in even more varied material's properties, many of which can be tuned via chemistry. Thus, the aim of this review is to reintroduce to the scientific community the developments in boride crystal chemistry over the past 60 years. We tie structures to material properties, and furthermore, elaborate on convenient synthetic routes toward preparing borides.