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Smołka T, Rygała M, Hilska J, Puustinen J, Koivusalo E, Guina M, Motyka M. Influence of the Bismuth Content on the Optical Properties and Photoluminescence Decay Time in GaSbBi Films. ACS OMEGA 2023; 8:36355-36360. [PMID: 37810694 PMCID: PMC10552505 DOI: 10.1021/acsomega.3c05046] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/13/2023] [Accepted: 09/08/2023] [Indexed: 10/10/2023]
Abstract
We report the optical properties of GaSbBi layers grown on GaSb (100) substrates with different bismuth contents of 5.8 and 8.0% Bi. Fourier-transform photoluminescence spectra were determined to identify the band gaps of the studied materials. Further temperature- and power-dependent photoluminescence measurements indicated the presence of localized states connected to bismuth clustering. Finally, time-resolved photoluminescence measurements based on single-photon counting allowed the determination of characteristic photoluminescence decay time constants. Because of the increasing bismuth content and clustering effects, an increase in the time constant was observed.
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Affiliation(s)
- Tristan Smołka
- Laboratory
for Optical Spectroscopy of Nanostructures, Department of Experimental
Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego
27, 50-370 Wrocław, Poland
| | - Michał Rygała
- Laboratory
for Optical Spectroscopy of Nanostructures, Department of Experimental
Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego
27, 50-370 Wrocław, Poland
| | - Joonas Hilska
- Optoelectronics
Research Centre, Physics Unit, Tampere University, Korkeakoulunkatu 3, 33720 Tampere, Finland
| | - Janne Puustinen
- Optoelectronics
Research Centre, Physics Unit, Tampere University, Korkeakoulunkatu 3, 33720 Tampere, Finland
| | - Eero Koivusalo
- Optoelectronics
Research Centre, Physics Unit, Tampere University, Korkeakoulunkatu 3, 33720 Tampere, Finland
| | - Mircea Guina
- Optoelectronics
Research Centre, Physics Unit, Tampere University, Korkeakoulunkatu 3, 33720 Tampere, Finland
| | - Marcin Motyka
- Laboratory
for Optical Spectroscopy of Nanostructures, Department of Experimental
Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego
27, 50-370 Wrocław, Poland
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Gao X, Wei Z, Zhao F, Yang Y, Chen R, Fang X, Tang J, Fang D, Wang D, Li R, Ge X, Ma X, Wang X. Investigation of Localized States in GaAsSb Epilayers Grown by Molecular Beam Epitaxy. Sci Rep 2016; 6:29112. [PMID: 27381641 PMCID: PMC4933967 DOI: 10.1038/srep29112] [Citation(s) in RCA: 36] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/26/2016] [Accepted: 06/15/2016] [Indexed: 01/29/2023] Open
Abstract
We report the carrier dynamics in GaAsSb ternary alloy grown by molecular beam epitaxy through comprehensive spectroscopic characterization over a wide temperature range. A detailed analysis of the experimental data reveals a complex carrier relaxation process involving both localized and delocalized states. At low temperature, the localized degree shows linear relationship with the increase of Sb component. The existence of localized states is also confirmed by the temperature dependence of peak position and band width of the emission. At temperature higher than 60 K, emissions related to localized states are quenched while the band to band transition dominates the whole spectrum. This study indicates that the localized states are related to the Sb component in the GaAsSb alloy, while it leads to the poor crystal quality of the material, and the application of GaAsSb alloy would be limited by this deterioration.
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Affiliation(s)
- Xian Gao
- State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China
| | - Zhipeng Wei
- State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China
| | - Fenghuan Zhao
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology of China, Shenzhen, Guangdong 518055, China
| | - Yahui Yang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology of China, Shenzhen, Guangdong 518055, China
| | - Rui Chen
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology of China, Shenzhen, Guangdong 518055, China
| | - Xuan Fang
- State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China
| | - Jilong Tang
- State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China
| | - Dan Fang
- State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China
| | - Dengkui Wang
- State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China
| | - Ruixue Li
- State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China
| | - Xiaotian Ge
- State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China
| | - Xiaohui Ma
- State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China
| | - Xiaohua Wang
- State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China
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