Molecular dynamics simulations of oxygen vacancy diffusion in SrTiO3

Dimension-Confined Growth of a Crack-Free PbS Microplate Array for Infrared Image Sensing

Epitaxy of semiconductors is a necessary step toward the development of electronic devices such as lasers, detectors, transistors, and solar cells. However, the lattice ordering of semiconductor functional films is inevitably disrupted by excessive concentrated stress due to the mismatch of the thermal expansion coefficient. Herein, combined with the first-principles calculation, we find that a rigid film/substrate bilayer heterostructure with a large thermal expansion mismatch upon cooling to room temperature from growth is free of surface cracks when the rigid film exhibits a dimension smaller than the critical condition for the breaking energy. The principle has been verified in a PbS/SrTiO3 bilayer system that is crack free on PbS single-crystalline microplate arrays through the designing of a dimension-confined growth (DCG) method. Interestingly, this crack-free, large-scale PbS microplate array exhibits exceptional uniformity in morphology, dimensions, thickness, and photodetection properties, enabling a broad-band infrared image sensing. This work provides a new perspective to design materials and arrays that demand smooth and continuous surfaces, which are not limited only to semiconductor electronics but also include mechanical structures, optical materials, biomedical materials, and others.

A Theoretical Study of Oxygen Anion Diffusion through the A-Site Deficient SrTiO3 Lattice Structure: A Machine Learning Approach

The performance of strontium titanate-based perovskite materials, widely employed as electrode materials for reversible solid oxide cells, is directly characterized by their efficiency and their ability to facilitate the diffusion of generated oxygen ions. A technique frequently employed for enhancing oxygen ion diffusivity involves artificially generating A-site vacancies in these structures. In this study, the molecular-level mechanism of oxygen ion diffusion for a range of A-site deficient structures is extensively investigated using combined molecular dynamics simulations and machine learning-based technique. The analysis of molecular simulation trajectories yields diffusion parameters for the bulk system. Additionally, clustering analysis of time-overlapped locations of oxygen ions provides a spatial distribution of oxygen ion dislocations. Concurrently, tracking the motion of individual oxygen ions elucidates the contribution of each ion to the overall ionic conductance. Overall, the systematic generation of A-site deficiency is found to significantly influence oxygen ion dislocations, thereby impacting the performance of these materials in terms of oxide ion conduction.

Controlled manipulation of oxygen vacancies using nanoscale flexoelectricity

Oxygen vacancies, especially their distribution, are directly coupled to the electromagnetic properties of oxides and related emergent functionalities that have implications for device applications. Here using a homoepitaxial strontium titanate thin film, we demonstrate a controlled manipulation of the oxygen vacancy distribution using the mechanical force from a scanning probe microscope tip. By combining Kelvin probe force microscopy imaging and phase-field simulations, we show that oxygen vacancies can move under a stress-gradient-induced depolarisation field. When tailored, this nanoscale flexoelectric effect enables a controlled spatial modulation. In motion, the scanning probe tip thereby deterministically reconfigures the spatial distribution of vacancies. The ability to locally manipulate oxygen vacancies on-demand provides a tool for the exploration of mesoscale quantum phenomena and engineering multifunctional oxide devices.The properties of complex oxides such as strontium titanate are strongly affected by the presence and distribution of oxygen vacancies. Here, the authors demonstrate that a scanning probe microscope tip can be used to manipulate vacancies by the flexoelectric effect.

Thermally Activated Point Defect Diffusion in Methylammonium Lead Trihalide: Anisotropic and Ultrahigh Mobility of Iodine

We study the diffusion of point defects in crystalline methylammonium lead halide (MAPI) at finite temperatures by using all-atoms molecular dynamics. We find that, for what concerns intrinsic defects, iodine diffusion is by far the dominant mechanism of ionic transport in MAPI, with diffusivities as high as 7.4 × 10(-7) and 4.3 × 10(-6) cm(2) s(-1) at 300 K and single activation energies of 0.24 and 0.10 eV, for interstitials and vacancies, respectively. The comparison with common covalent and oxide crystals reveals the ultrahigh mobility of defects in MAPI. Though at room temperature the vacancies are about 1 order of magnitude more diffusive, the anisotropic interstitial dynamics increases more rapidly with temperature, and it can be dominant at high temperatures. Present results are fully consistent with the involvement of iodide ions in hysteresis and have implications for improvement of the material quality by better control of defect diffusion.

Computational Study of Oxygen Diffusion along a[100] Dislocations in the Perovskite Oxide SrTiO3

We used classical molecular-dynamics simulations to study the atomistic structure of, and the diffusion of oxygen ions along, the periodic array of edge dislocations comprising a symmetrical 6.0° [100] tilt grain boundary in SrTiO3. The results indicate that, at elevated temperatures, the two types of dislocation core (TiO2-type and SrO-type) that make up the boundary are stable and that oxygen-deficient cores maintain their dissociated structures. They also confirm that oxygen vacancies prefer to reside at the cores rather than in the bulk. Tracer diffusion coefficients of oxygen were obtained for oxygen-deficient bulk and grain-boundary simulation cells at temperatures in the range of 1000 ≤ T/K ≤ 2300. Calculated values of the oxygen-vacancy diffusion coefficient for the bulk phase agree extremely well with published experimental data. Tracer diffusion coefficients obtained for the grain-boundary cell are, in comparison to those for the bulk, lower in magnitude and have a higher activation enthalpy, indicating that, relative to the bulk, the migration of oxygen ions along a[100] dislocation cores in SrTiO3 is hindered. These results provide further support for the decoupled model of filament formation in resistively switching SrTiO3.