Crystal growth and electronic properties of a 3D Rashba material, BiTeI, with adjusted carrier concentrations

Two-dimensional BiTeI as a novel perovskite additive for printable perovskite solar cells

Hybrid organic-inorganic perovskite solar cells (PSCs) are attractive printable, flexible, and cost-effective optoelectronic devices constituting an alternative technology to conventional Si-based ones. The incorporation of low-dimensional materials, such as two-dimensional (2D) materials, into the PSC structure is a promising route for interfacial and bulk perovskite engineering, paving the way for improved power conversion efficiency (PCE) and long-term stability. In this work, we investigate the incorporation of 2D bismuth telluride iodide (BiTeI) flakes as additives in the perovskite active layer, demonstrating their role in tuning the interfacial energy-level alignment for optimum device performance. By varying the concentration of BiTeI flakes in the perovskite precursor solution between 0.008 mg mL^-1 and 0.1 mg mL^-1, a downward shift in the energy levels of the perovskite results in an optimal alignment of the energy levels of the materials across the cell structure, as supported by device simulations. Thus, the cell fill factor (FF) increases with additive concentration, reaching values greater than 82%, although the suppression of open circuit voltage (V _oc) is reported beyond an additive concentration threshold of 0.03 mg mL^-1. The most performant devices delivered a PCE of 18.3%, with an average PCE showing a +8% increase compared to the reference devices. This work demonstrates the potential of 2D-material-based additives for the engineering of PSCs via energy level optimization at perovskite/charge transporting layer interfaces.

Electrically Controlled Spin Injection from Giant Rashba Spin-Orbit Conductor BiTeBr

Ferromagnetic materials are the widely used source of spin-polarized electrons in spintronic devices, which are controlled by external magnetic fields or spin-transfer torque methods. However, with increasing demand for smaller and faster spintronic components utilization of spin-orbit phenomena provides promising alternatives. New materials with unique spin textures are highly desirable since all-electric creation and control of spin polarization is expected where the strength, as well as an arbitrary orientation of the polarization, can be defined without the use of a magnetic field. In this work, we use a novel spin-orbit crystal BiTeBr for this purpose. Because of its giant Rashba spin splitting, bulk spin polarization is created at room temperature by an electric current. Integrating BiTeBr crystal into graphene-based spin valve devices, we demonstrate for the first time that it acts as a current-controlled spin injector, opening new avenues for future spintronic applications in integrated circuits.

Enhanced thermoelectric performance in the Rashba semiconductor BiTeI through band gap engineering

Rashba semiconductors are of great interest in spintronics, superconducting electronics and thermoelectrics. Bulk BiTeI is a new Rashba system with a giant spin-split band structure. 2D-like thermoelectric response has been found in BiTeI. However, as optimizing the carrier concentration, the bipolar effect occurs at elevated temperature and deteriorates the thermoelectric performance of BiTeI. In this paper, band gap engineering in Rashba semiconductor BiTeI through Br-substitution successfully reduces the bipolar effect and improves the thermoelectric properties. By utilizing the optical absorption and Burstein-Moss-effect analysis, we find that the band gap in Rashba semiconductor BiTeI increases upon bromine substitution, which is consistent with theoretical predictions. Bipolar transport is mitigated due to the larger band gap, as the thermally-activated minority carriers diminish. Consequently, the Seebeck coefficient keeps increasing with a corresponding rise in temperature, and thermoelectric performance can thus be enhanced with a ZT  =  0.5 at 570 K for BiTeI0.88Br0.12.

Signatures of a pressure-induced topological quantum phase transition in BiTeI

We report the observation of two signatures of a pressure-induced topological quantum phase transition in the polar semiconductor BiTeI using x-ray powder diffraction and infrared spectroscopy. The x-ray data confirm that BiTeI remains in its ambient-pressure structure up to 8 GPa. The lattice parameter ratio c/a shows a minimum between 2.0-2.9 GPa, indicating an enhanced c-axis bonding through p(z) band crossing as expected during the transition. Over the same pressure range, the infrared spectra reveal a maximum in the optical spectral weight of the charge carriers, reflecting the closing and reopening of the semiconducting band gap. Both of these features are characteristics of a topological quantum phase transition and are consistent with a recent theoretical proposal.