Comparison of the stability of free-standing silicene and hydrogenated silicene in oxygen: a first principles investigation

First designing of a silicene-based optical MOSFET with outstanding performance

Miniaturized integrated optical devices with low power consumption have long been considered hot candidates for plasmonic applications. While 2D materials such as graphene have been proposed for this purpose, they suffer from large propagation loss and low controllability at room temperature. Here, a silicene-based optical MOSFET with excellent performance is designed to achieve integrated circuit optical technology. The designed device is comprised of a silicene optical waveguide whose switching operation is performed by a gate and has a structure similar to an enhancement MOSFET with a formed channel. Unlike graphene, the surface conductivity of silicene can be controlled by both chemical potential and an electric field perpendicular to its surface. This unique feature of silicene is used to design and simulate an optical-MOSFET with transverse electric polarization at 300 K. The salient characteristics of the optical device include its nanoscale dimensions, ultra-low insertion loss of 0.13 dB, infinite extinction ratio, and quality factor of 688, proposing it as a promising tool for optical integration.

Rise of silicene and its applications in gas sensing

Reviewing a subject is done to provide an insight into theoretical and conceptual background of the study. Looking back into the history of an emerging field and summarizing it in a few pages is a herculean task. Anyway, it was imperative to write a few words about the rise of silicene, its properties, and its applications as gas sensors. Currently, silicene is a growing field of interest. It is probably one of the most studied materials nowadays and scientists and researchers are studying it because of its intriguing electronic properties and potential applications in nanoelectronics. Various experimental and theoretical investigations are going on worldwide to explore the various aspects of this field. It is essential to review the literature based on investigations by various scientists in this field.

Oxidized Monolayers of Epitaxial Silicene on Ag(111)

The properties of epitaxial silicene monolayers on Ag(111) at various levels of oxidation are determined through complementary density functional theory calculations and soft X-ray spectroscopy experiments. Our calculations indicate that moderate levels of oxidation do not cause a significant bandgap opening in the epitaxial silicene monolayer, suggesting that oxygen functionalization is not a viable mechanism for bandgap tuning while the silicene monolayer remains on its metallic substrate. In addition, moderate oxidation is calculated to strongly distort the hexagonal Si lattice, causing it to cluster in regions of highest oxygen adatom concentration but retain its 2D sheet structure. However, our experiments reveal that beam-induced oxidation is consistent with the formation of islands of bulk-like SiO2. Complete exposure of the monolayer to ambient conditions results in a fully oxidized sample that closely resembles bulk SiO2, of which a significant portion is completely detached from the substrate.

How silicene on Ag(111) oxidizes: microscopic mechanism of the reaction of O2 with silicene

We demonstrate, using first-principles molecular-dynamics simulations, that oxidation of silicene can easily take place either at low or high oxygen doses, which importantly helps clarify previous inconsistent reports on the oxidation of silicene on the Ag(111) substrate. We show that, while the energy barrier for an O₂ molecule reacting with a Si atom strongly depends on the position and orientation of the molecule, the O₂ molecule immediately dissociates and forms an Si-O-Si configuration once it finds a barrier-less chemisorption pathway around an outer Si atom of the silicene overlayer. A synergistic effect between the molecular dissociation and subsequent structural rearrangements is found to accelerate the oxidation process at a high oxygen dose. This effect also enhances self-organized formation of sp³-like tetrahedral configurations (consisting of Si and O atoms), which results in collapse of the two-dimensional silicene structure and its exfoliation from the substrate. We also find that the electronic properties of the silicene can be significantly altered by oxidation. The present findings suggest that low flux and low temperature of the oxygen gas are key to controlling oxidation of silicene.