Growth, characterization, and transport properties of ternary (Bi1-x Sb x )2Te3 topological insulator layers

Epitaxial Growth and Characterization of Nanoscale Magnetic Topological Insulators: Cr-Doped (Bi0.4Sb0.6)2Te3

The exploration initiated by the discovery of the topological insulator (BixSb1-x)2Te3 has extended to unlock the potential of quantum anomalous Hall effects (QAHEs), marking a revolutionary era for topological quantum devices, low-power electronics, and spintronic applications. In this study, we present the epitaxial growth of Cr-doped (Bi0.4Sb0.6)2Te3 (Cr:BST) thin films via molecular beam epitaxy, incorporating various Cr doping concentrations with varying Cr/Sb ratios (0.025, 0.05, 0.075, and 0.1). High-quality crystalline of the Cr:BST thin films deposited on a c-plane sapphire substrate has been rigorously confirmed through reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), and high-resolution transmission electron microscopy (HRTEM) analyses. The existence of a Cr dopant has been identified with a reduction in the lattice parameter of BST from 30.53 ± 0.05 to 30.06 ± 0.04 Å confirmed by X-ray diffraction, and the valence state of Cr verified by X-ray photoemission (XPS) at binding energies of ~573.1 and ~583.5 eV. Additionally, the influence of Cr doping on lattice vibration was qualitatively examined by Raman spectroscopy, revealing a blue shift in peaks with increased Cr concentration. Surface characteristics, crucial for the functionality of topological insulators, were explored via Atomic Force Microscopy (AFM), illustrating a sevenfold reduction in surface roughness as the Cr concentration increased from 0 to 0.1. The ferromagnetic properties of Cr:BST were examined by a superconducting quantum interference device (SQUID) with a magnetic field applied in out-of-plane and in-plane directions. The Cr:BST samples exhibited a Curie temperature (Tc) above 50 K, accompanied by increased magnetization and coercivity with increasing Cr doping levels. The introduction of the Cr dopant induces a transition from n-type ((Bi0.4Sb0.6)2Te3) to p-type (Cr:(Bi0.4Sb0.6)2Te3) carriers, demonstrating a remarkable suppression of carrier density up to one order of magnitude, concurrently enhancing carrier mobility up to a factor of 5. This pivotal outcome is poised to significantly influence the development of QAHE studies and spintronic applications.

High Curie temperature ferromagnetic structures of (Sb2Te3)1-x(MnSb2Te4)x with x = 0.7-0.8

Magnetic topological materials are promising for realizing novel quantum physical phenomena. Among these, bulk Mn-rich MnSb₂Te₄ is ferromagnetic due to Mn_Sb antisites and has relatively high Curie temperatures (T_C), which is attractive for technological applications. We have previously reported the growth of materials with the formula (Sb₂Te₃)_1-x(MnSb₂Te₄)_x, where x varies between 0 and 1. Here we report on their magnetic and transport properties. We show that the samples are divided into three groups based on the value of x (or the percent septuple layers within the crystals) and their corresponding T_C values. Samples that contain x < 0.7 or x > 0.9 have a single T_C value of 15-20 K and 20-30 K, respectively, while samples with 0.7 < x < 0.8 exhibit two T_C values, one (T_C1) at ~ 25 K and the second (T_C2) reaching values above 80 K, almost twice as high as any reported value to date for these types of materials. Structural analysis shows that samples with 0.7 < x < 0.8 have large regions of only SLs, while other regions have isolated QLs embedded within the SL lattice. We propose that the SL regions give rise to a T_C1 of ~ 20 to 30 K, and regions with isolated QLs are responsible for the higher T_C2 values. Our results have important implications for the design of magnetic topological materials having enhanced properties.

Enhancement of the Surface Morphology of (Bi0.4Sb0.6)2Te3 Thin Films by In Situ Thermal Annealing

The study of the exotic properties of the surface states of topological insulators requires defect-free and smooth surfaces. This work aims to study the enhancement of the surface morphology of optimally doped, high-crystalline (Bi_0.4Sb_0.6)₂Te₃ films deposited by molecular beam epitaxy on Al₂O₃ (001) substrates. Atomic force microscopy shows that by employing an in situ thermal post anneal, the surface roughness is reduced significantly, and transmission electron microscopy reveals that structural defects are diminished substantially. Thence, these films provide a great platform for the research on the thickness-dependent properties of topological insulators.

Revisiting the van der Waals Epitaxy in the Case of (Bi0.4Sb0.6)2Te3 Thin Films on Dissimilar Substrates

Ultrathin films of the ternary topological insulator (Bi0.4Sb0.6)2Te3 are fabricated by molecular beam epitaxy. Although it is generally assumed that the ternary topological insulator tellurides grow by van der Waals epitaxy, our results show that the influence of the substrate is substantial and governs the formation of defects, mosaicity, and twin domains. For this comparative study, InP (111)A, Al2O3 (001), and SrTiO3 (111) substrates were selected. While the films deposited on lattice-matched InP (111)A show van der Waals epitaxial relations, our results point to a quasi-van der Waals epitaxy for the films grown on substrates with a larger lattice mismatch.

Anisotropic optical responses of layered thallium arsenic sulfosalt gillulyite

Multi-element two-dimensional (2D) materials hold great promise in the context of tailoring the physical and chemical properties of the materials via stoichiometric engineering. However, the rational and controllable synthesis of complex 2D materials remains a challenge. Herein, we demonstrate the preparation of large-area thin quaternary 2D material flakes via mechanical exfoliation from a naturally occurring bulk crystal named gillulyite. Furthermore, the anisotropic linear and nonlinear optical properties including anisotropic Raman scattering, linear dichroism, and anisotropic third-harmonic generation (THG) of the exfoliated gillulyite flakes are investigated. The observed highly anisotropic optical properties originate from the reduced in-plane crystal symmetry. Additionally, the third-order nonlinear susceptibility of gillulyite crystal is retrieved from the measured thickness-dependent THG emission. We anticipate that the demonstrated strong anisotropic linear and nonlinear optical responses of gillulyite crystal will facilitate the better understanding of light-matter interaction in quaternary 2D materials and its implications in technological innovations such as photodetectors, frequency modulators, nonlinear optical signal processors, and solar cell applications.

Polarization-dependent optical responses in natural 2D layered mineral teallite

Multi-element layered materials enable the use of stoichiometric variation to engineer their optical responses at subwavelength scale. In this regard, naturally occurring van der Waals minerals allow us to harness a wide range of chemical compositions, crystal structures and lattice symmetries for layered materials under atomically thin limit. Recently, one type of naturally occurring sulfide mineral, ternary teallite has attained significant interest in the context of thermoelectric, optoelectronic, and photovoltaic applications, but understanding of light-matter interactions in such ternary teallite crystals is scarcely available. Herein, polarization-dependent linear and nonlinear optical responses in mechanically exfoliated teallite crystals are investigated including anisotropic Raman modes, wavelength-dependent linear dichroism, optical band gap evolution, and anisotropic third-harmonic generation (THG). Furthermore, the third-order nonlinear susceptibility of teallite crystal is estimated using the thickness-dependent THG emission process. We anticipate that our findings will open the avenue to a better understanding of the tailored light-matter interactions in complex multi-element layered materials and their implications in optical sensors, frequency modulators, integrated photonic circuits, and other nonlinear signal processing applications.

Flux periodic oscillations and phase-coherent transport in GeTe nanowire-based devices

Despite the fact that GeTe is known to be a very interesting material for applications in thermoelectrics and for phase-change memories, the knowledge on its low-temperature transport properties is only limited. We report on phase-coherent phenomena in the magnetotransport of GeTe nanowires. From universal conductance fluctuations measured on GeTe nanowires with Au contacts, a phase-coherence length of about 280 nm at 0.5 K is determined. The distinct phase-coherence is confirmed by the observation of Aharonov-Bohm type oscillations for parallel magnetic fields. We interpret the occurrence of these magnetic flux-periodic oscillations by the formation of a tubular hole accumulation layer. For Nb/GeTe-nanowire/Nb Josephson junctions we obtained a critical current of 0.2 μA at 0.4 K. By applying a perpendicular magnetic field the critical current decreases monotonously with increasing field, whereas in a parallel field the critical current oscillates with a period of the magnetic flux quantum confirming the presence of a tubular hole channel.

Phase-coherent loops in selectively-grown topological insulator nanoribbons

We succeeded in the fabrication of topological insulator (Bi_0.57Sb_0.43)₂Te₃ Hall bars as well as nanoribbons by means of selective-area growth using molecular beam epitaxy. By performing magnetotransport measurements at low temperatures information on the phase-coherence of the electrons is gained by analyzing the weak-antilocalization effect. Furthermore, from measurements on nanoribbons at different magnetic field tilt angles an angular dependence of the phase-coherence length is extracted, which is attributed to transport anisotropy and geometrical factors. For the nanoribbon structures universal conductance fluctuations were observed. By performing a Fourier transform of the fluctuation pattern a series of distinct phase-coherent closed-loop trajectories are identified. The corresponding enclosed areas can be explained in terms of nanoribbon dimensions and phase-coherence length. In addition, from measurements at different magnetic field tilt angles we can deduce that the area enclosed by the loops are predominately oriented parallel to the quintuple layers.

Room temperature in-situ measurement of the spin voltage of a BiSbTe3 thin film

One of the hallmarks of topological insulators (TIs), the intrinsic spin polarisation in the topologically protected surface states, is investigated at room temperature in-situ by means of four-probe scanning tunnelling microscopy (STM) for a BiSbTe₃ thin film. To achieve the required precision of tip positions for measuring a spin signal, a precise positioning method employing STM scans of the local topography with each individual tip is demonstrated. From the transport measurements, the spin polarisation in the topological surface states (TSS) is estimated as p ~ 0.3 – 0.6, which is close to the theoretical limit.

Band structure engineering in 3D topological insulators

The discovery of novel topological phases has revolutionized the way we think about electronic matter. Topologically protected states have been demonstrated for many materials, however, creating materials that exhibit desired properties often remains a challenge. For example, one of the key challenges in three dimensional topological insulators has been the realization of insulating bulk, such that the unique properties of surface states could be fully employed in electron transport applications. Further challenges are in creating materials that simultaneously exhibit states protected by various symmetries on their different surfaces, inducing magnetic exchange coupling into the topological materials, as well as potentially creating non-trivial transient electronic states. This review presents theoretical concepts and a selection of experimental results from the point view of a spectroscopist, and as such might be useful for physicists who want to get familiar with the key concepts in a self-contained form with formalism reduced to readily understandable concepts.

Phase-coherent transport in selectively grown topological insulator nanodots

Oxidized Si(111) substrates were pre-structured by electron beam lithography and used as a substrate for the selective growth of three-dimensional topological insulators (TI) by molecular beam epitaxy. The patterned holes were filled up by the TI, i.e. Sb₂Te₃ and Bi₂Te₃, to form nanodots. Scanning electron microscopy and focused ion beam cross-sectioning was utilized to determine the morphology and depth profile of the nanodots. The magnetotransport measurements revealed universal conductance fluctuations originating from electron interference in phase-coherent loops. We find that these loops are oriented preferentially within the quintuple layers of the TI with only a small perpendicular contribution. Furthermore, we found clear indications of an conductivity anisotropy between different crystal orientations.

Nanoscale Near-Field Tomography of Surface States on (Bi0.5Sb0.5)2Te3

Three-dimensional topological insulators (TIs) have attracted tremendous interest for their possibility to host massless Dirac Fermions in topologically protected surface states (TSSs), which may enable new kinds of high-speed electronics. However, recent reports have outlined the importance of band bending effects within these materials, which results in an additional two-dimensional electron gas (2DEG) with finite mass at the surface. TI surfaces are also known to be highly inhomogeneous on the nanoscale, which is masked in conventional far-field studies. Here, we use near-field microscopy in the mid-infrared spectral range to probe the local surface properties of custom-tailored (Bi_0.5Sb_0.5)₂Te₃ structures with nanometer precision in all three spatial dimensions. Applying nanotomography and nanospectroscopy, we reveal a few-nanometer-thick layer of high surface conductivity and retrieve its local dielectric function without assuming any model for the spectral response. This allows us to directly distinguish between different types of surface states. An intersubband transition within the massive 2DEG formed by quantum confinement in the bent conduction band manifests itself as a sharp, surface-bound, Lorentzian-shaped resonance. An additional broadband background in the imaginary part of the dielectric function may be caused by the TSS. Tracing the intersubband resonance with nanometer spatial precision, we observe changes of its frequency, likely originating from local variations of doping or/and the mixing ratio between Bi and Sb. Our results highlight the importance of studying the surfaces of these novel materials on the nanoscale to directly access the local optical and electronic properties via the dielectric function.

Electrical resistance of individual defects at a topological insulator surface

Three-dimensional topological insulators host surface states with linear dispersion, which manifest as a Dirac cone. Nanoscale transport measurements provide direct access to the transport properties of the Dirac cone in real space and allow the detailed investigation of charge carrier scattering. Here we use scanning tunnelling potentiometry to analyse the resistance of different kinds of defects at the surface of a (Bi_0.53Sb_0.47)₂Te₃ topological insulator thin film. We find the largest localized voltage drop to be located at domain boundaries in the topological insulator film, with a resistivity about four times higher than that of a step edge. Furthermore, we resolve resistivity dipoles located around nanoscale voids in the sample surface. The influence of such defects on the resistance of the topological surface state is analysed by means of a resistor network model. The effect resulting from the voids is found to be small compared with the other defects.

Exploiting topological insulator surface states in electronic devices requires an understanding of the factors that affect transport. Here, the authors use scanning tunnelling potentiometry to determine the contributions of different kinds of surface defects to the electrical resistance.