Stacking dependence of carrier transport properties in multilayered black phosphorous

Interlayer Doping of Cu on Bilayer Black Phosphorus for Enhanced Charge Transfer and Transport Properties

Metal doping between black phosphorus (BP) layers has great advantages in modulating electronic properties. Here, the effects of Cu intercalation on charge transfer and carrier dynamics are investigated by theoretical calculations. Relative to the pristine bilayer BP, Cu suppresses the nonradiative electron-hole recombination, reducing the major pathways of energy and current loss. Furthermore, we investigate a novel pn homogeneous junction based on the Cu-doped bilayer BP, which shows enhanced transport properties and Ohmic contact characteristics. This is because doping leads to the transformation of BP from p-type to n-type, charge accumulation on conduction bands allows electrons to be easily transferred to the p-type bilayer BP, and associated electrical properties can be modulated by the doping concentration. This study has fundamental importance for understanding structure-property relationships in metal intercalation, which is an important guidance for integration and interlayer engineering for two-dimensional materials.

Physical Fingerprints of the 2O-tαP Phase in Phosphorene Stacking

The 2O-tαP phase is a bilayer phosphorene stacking twisted by ∼70.5° standing out from all the potential candidates predicted by our previous work. Here, by linear response theory, we directly verified that the 2O-tαP phase preserves the intrinsic features of phonon spectrum of the existing AB phase, reflecting a stable thermodynamic behavior. Then we provided three distinct fingerprints to help finding this new phase: upon comparison to the existing shifting bilayer phosphorene, the in-plane elastic constants showed a much weaker anisotropic response, providing a characteristic mechanical criterion; the calculated Raman spectrum revealed for the low frequency rang the layer-breathing mode and the out-of-plane twisted mode, L-A¹ and L-A², both of which together stabilize the twisted structure; in particular, the simulated scanning tunneling microscope image presented recognizable cross stripes, which should withstand an examination of exfoliated bilayer and few-layer black phosphorus.

Edge phonons in black phosphorus

Black phosphorus has recently emerged as a new layered crystal that, due to its peculiar and anisotropic crystalline and electronic band structures, may have important applications in electronics, optoelectronics and photonics. Despite the fact that the edges of layered crystals host a range of singular properties whose characterization and exploitation are of utmost importance for device development, the edges of black phosphorus remain poorly characterized. In this work, the atomic structure and behaviour of phonons near different black phosphorus edges are experimentally and theoretically studied using Raman spectroscopy and density functional theory calculations. Polarized Raman results show the appearance of new modes at the edges of the sample, and their spectra depend on the atomic structure of the edges (zigzag or armchair). Theoretical simulations confirm that the new modes are due to edge phonon states that are forbidden in the bulk, and originated from the lattice termination rearrangements.

Black phosphorus is an allotrope of phosphorous that, like graphite, can be exfoliated to create two-dimensional materials. Here, the authors use Raman spectroscopy and density functional theory calculations to investigate the anomalous behaviour of phonons near different black phosphorus edges.