Enhanced field emission from injector-like ZnO nanostructures with minimized screening effect

Coplanar-gate ZnO nanowire field emitter arrays with enhanced gate-control performance using a ring-shaped cathode

Nanowire field emitters have great potential for use as large-area gated field emitter arrays (FEAs). However, the micrometer-scale cathode patterns in gated FEA devices will reduce regulation of the gate voltage and limit the field emission currents of these devices as a result of field-screening effect among the neighboring nanowires. In this article, a ring-shaped ZnO nanowire pad is proposed to overcome this problem. Diode measurements show that the prepared ring-shaped ZnO nanowire pad arrays shows uniform emission with a turn-on field of 5.9 V/µm and a field emission current density of 4.6 mA/cm² under an applied field of 9 V/µm. The ZnO nanowire pad arrays were integrated into coplanar-gate FEAs and enhanced gate-controlled device characteristics were obtained. The gate-controlled capability was studied via microscopic in-situ measurements of the field emission from the ZnO nanowires in the coplanar-gate FEAs. Based on the results of both simulations and experiments, we attributed the enhanced gate-controlled device capabilities to more efficient emission of electrons from the ZnO nanowires as a result of the increase edge area by designing ring-shaped ZnO nanowire pad. The results are important to the realization of large-area gate-controlled FEAs based on nanowire emitters for use in vacuum electronic devices.

Optimizing the Field Emission Properties of ZnO Nanowire Arrays by Precisely Tuning the Population Density and Application in Large-Area Gated Field Emitter Arrays

Zinc oxide (ZnO) nanowires are prepared for application in large area gated field emitter arrays (FEAs). By oxidizing Al-coated Zn films, the population density of the ZnO nanowires was tuned precisely by varying the thickness of the Al film. The nanowire density decreased linearly as the thickness of the Al film increased. Optimal field emission properties with a turn-on field of 6.21 V μm^-1 and current fluctuations less than 1% are obtained. This can be explained by the minimized screening effect and good electrical conductivity of the back-contact layer. The mechanism responsible for the linear variation in the nanowire density is investigated in detail. Addressable FEAs using the optimal ZnO nanowire cathodes were fabricated and applied in a display device. Good gate-controlled characteristics and the display of video images are realized. The results indicate that ZnO nanowires could be applied in large area FEAs.

Flexible cold cathode with ultralow threshold field designed through wet chemical route

A flexible cold cathode based on a uniform array of ZnO nanowires over carbon fabrics was designed via a simple wet chemical route. The structural parameters of the nanowires (i.e. length, diameter) as well as their arrangement over the carbon fibers were tailored by adjusting nutrient solution composition and growth duration. The optimized arrays of ZnO nanowires exhibit excellent electron emission performance with ultralow turn-on as well as threshold fields of 0.27 and 0.56 V µm(-1). This threshold field value is the lowest compared to any of the previous zinc-oxide-based cold cathodes realized through either chemical or vapor phase processes. In addition, the current density can reach an exceptionally high value of ∼ 11 mA cm(-2) at an applied electric field of only 0.8 V µm(-1). Flexible electronic devices based on a field emitter cold cathode may thus be realized through chemical processing at low budget but having high efficiency.

Fabrication of ZnO nanospikes and nanopillars on ITO glass by templateless seed-layer-free electrodeposition and their field-emission properties

A simple and direct electrodeposition technique is employed to fabricate ZnO nanospikes and nanopillars on indium-tin oxide glass substrates at 70 degrees C without using any template, catalyst, or seed layer. Both ZnO nanospikes and nanopillars exhibit highly crystalline ZnO wurtzite structure with a preferred (0001) plane orientation in their high-resolution transmission electron microscopic images and X-ray diffraction patterns. The corresponding Raman spectra provide evidence for the presence of defects and oxygen vacancies in these nanostructures, which could produce the photoluminescence observed in the visible region. X-ray photoelectron spectroscopy further indicates the presence of a Zn(OH)2-rich surface region in these ZnO nanostructures and that a higher Zn(OH)2 surface moiety is found for nanospikes than nanopillars. In contrast to the nanopillars with flat tops, the nanospikes with tapered tips of 20-50 nm diameter provide a favorable geometry to facilitate excellent field-emission performance, with a low turn-on electric field of 3.2 V/microm for 1.0 microA/cm(2) and a threshold field of 6.6 V/microm for 1.0 mA/cm(2). The superior field-emission property makes the nanospikes among the best ZnO field emitters fabricated on a glass substrate at low temperature.

Field emission from zinc oxide nanotowers: the role of the top morphology

Arrays of novel nanometer-scale tower-shaped structures of zinc oxide (ZnO nanotowers) were synthesized by a simple thermal evaporation method. Due to the difference in fabrication conditions, ZnO nanotowers with similar body structure but different top morphologies were obtained. These ZnO nanotowers with different top morphologies showed obvious disparity in field emission, despite their overall field enhancement factor and density being the same. The nanotowers with the sharpest top had the lowest turn-on and threshold electric field. This disparity is attributed to the different local field enhancement factors at the nanotower tops, which were calculated both from the field emission data and by simulation. The above results have demonstrated the essential importance of the top morphology of a ZnO nanostructure in field emission.

A ZnO nanorod inorganic/organic heterostructure light-emitting diode emitting at 342 nm

An inorganic/organic heterostructure light-emitting diode consisting of the hole-transporting layer N, N'-di(naphth-2-yl)- N, N'-diphenylbenzidine (NPB) and n-type ZnO nanorods fabricated by hydrothermal decomposition is reported. Poly(methyl methacrylate) was used to form a smooth surface on top of ZnO nanorod array with ZnO nanorod tops exposed for subsequent NPB deposition. An unusual ultraviolet emission at 342 nm was observed in the electroluminescence spectrum. Compared to band gap energy of ZnO (3.37 eV), the excitonic emission is blue-shifted and broadened. The mechanism of the blue shift is discussed in terms of the energy band diagram of the heterostructure.