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Xiong L, Dai J, Zhong B, Wen G, Song Y. Orientation- and passivation-dependent stability and electronic properties of α-Si3N4nanobelts. Phys Chem Chem Phys 2014; 16:24266-74. [DOI: 10.1039/c4cp03378g] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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Carenco S, Portehault D, Boissière C, Mézailles N, Sanchez C. Nanoscaled Metal Borides and Phosphides: Recent Developments and Perspectives. Chem Rev 2013; 113:7981-8065. [DOI: 10.1021/cr400020d] [Citation(s) in RCA: 756] [Impact Index Per Article: 68.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
Affiliation(s)
- Sophie Carenco
- Chimie de la Matière Condensée de Paris, UPMC Univ Paris 06, UMR 7574, Collège de France, 11 Place Marcelin Berthelot, 75231 Paris Cedex 05, France
- Chimie de la Matière Condensée de Paris, CNRS, UMR 77574, Collège de France, 11 Place Marcellin Berthelot, 75231 Paris Cedex 05, France
- Chimie de la Matière Condensée de Paris, Collège de France, 11 Place Marcellin Berthelot, 75231 Paris Cedex 05, France
- Laboratory Heteroelements and Coordination, Chemistry Department, Ecole Polytechnique, CNRS-UMR 7653, Palaiseau, France
| | - David Portehault
- Chimie de la Matière Condensée de Paris, UPMC Univ Paris 06, UMR 7574, Collège de France, 11 Place Marcelin Berthelot, 75231 Paris Cedex 05, France
- Chimie de la Matière Condensée de Paris, CNRS, UMR 77574, Collège de France, 11 Place Marcellin Berthelot, 75231 Paris Cedex 05, France
- Chimie de la Matière Condensée de Paris, Collège de France, 11 Place Marcellin Berthelot, 75231 Paris Cedex 05, France
| | - Cédric Boissière
- Chimie de la Matière Condensée de Paris, UPMC Univ Paris 06, UMR 7574, Collège de France, 11 Place Marcelin Berthelot, 75231 Paris Cedex 05, France
- Chimie de la Matière Condensée de Paris, CNRS, UMR 77574, Collège de France, 11 Place Marcellin Berthelot, 75231 Paris Cedex 05, France
- Chimie de la Matière Condensée de Paris, Collège de France, 11 Place Marcellin Berthelot, 75231 Paris Cedex 05, France
| | - Nicolas Mézailles
- Laboratory Heteroelements and Coordination, Chemistry Department, Ecole Polytechnique, CNRS-UMR 7653, Palaiseau, France
| | - Clément Sanchez
- Chimie de la Matière Condensée de Paris, UPMC Univ Paris 06, UMR 7574, Collège de France, 11 Place Marcelin Berthelot, 75231 Paris Cedex 05, France
- Chimie de la Matière Condensée de Paris, CNRS, UMR 77574, Collège de France, 11 Place Marcellin Berthelot, 75231 Paris Cedex 05, France
- Chimie de la Matière Condensée de Paris, Collège de France, 11 Place Marcellin Berthelot, 75231 Paris Cedex 05, France
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Trejo A, Cuevas JL, Salazar F, Carvajal E, Cruz-Irisson M. Ab-initio study of anisotropic and chemical surface modifications of β-SiC nanowires. J Mol Model 2012; 19:2043-8. [DOI: 10.1007/s00894-012-1605-y] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/06/2012] [Accepted: 09/24/2012] [Indexed: 10/27/2022]
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Sun MH, Joyce HJ, Gao Q, Tan HH, Jagadish C, Ning CZ. Removal of surface states and recovery of band-edge emission in InAs nanowires through surface passivation. NANO LETTERS 2012; 12:3378-3384. [PMID: 22663381 DOI: 10.1021/nl300015w] [Citation(s) in RCA: 40] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/01/2023]
Abstract
Surface states in semiconductor nanowires (NWs) are detrimental to the NW optical and electronic properties and to their light emission-based applications, due to the large surface-to-volume ratio of NWs and the congregation of defects states near surfaces. In this paper, we demonstrated an effective approach to eliminate surface states in InAs NWs of zinc-blende (ZB) and wurtzite (WZ) structures and a dramatic recovery of band edge emission through surface passivation with organic sulfide octadecylthiol (ODT). Microphotoluminescence (PL) measurements were carried out before and after passivation to study the dominant recombination mechanisms and surface state densities of the NWs. For WZ-NWs, we show that the passivation removed the surface states and recovered the band-edge emission, leading to a factor of ∼19 reduction of PL linewidth. For ZB-NWs, the deep surface states were removed and the PL peaks width became as narrow as ∼250 nm with some remaining emission of near band-edge surface states. The passivated NWs showed excellent stability in atmosphere, water, and heat environments. In particular, no observable changes occurred in the PL features from the passivated NWs exposed in air for more than five months.
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Affiliation(s)
- M H Sun
- School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287, United States
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Hu Y, Zhang Y, Xu C, Lin L, Snyder RL, Wang ZL. Self-powered system with wireless data transmission. NANO LETTERS 2011; 11:2527-32. [PMID: 21604749 DOI: 10.1021/nl201179n] [Citation(s) in RCA: 32] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
We demonstrate the first self-powered system driven by a nanogenerator (NG) that works wirelessly and independently for long-distance data transmission. The NG was made of a free cantilever beam that consisted of a five-layer structure: a flexible polymer substrate, ZnO nanowire textured films on its top and bottom surfaces, and electrodes on the surfaces. When it was strained to 0.12% at a strain rate of 3.56% S(-1), the measured output voltage reached 10 V, and the output current exceeded 0.6 μA (corresponding power density 10 mW/cm(3)). A system was built up by integrating a NG, rectification circuit, capacitor for energy storage, sensor, and RF data transmitter. Wireless signals sent out by the system were detected by a commercial radio at a distance of 5-10 m. This study proves the feasibility of using ZnO nanowire NGs for building self-powered systems, and its potential application in wireless biosensing, environmental/infrastructure monitoring, sensor networks, personal electronics, and even national security.
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Affiliation(s)
- Youfan Hu
- School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, United States
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Li D, Wang Z, Gao F. First-principles study of the electronic properties of wurtzite, zinc-blende, and twinned InP nanowires. NANOTECHNOLOGY 2010; 21:505709. [PMID: 21098947 DOI: 10.1088/0957-4484/21/50/505709] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/30/2023]
Abstract
The electronic properties of zinc-blende, wurtzite, and rotationally twinned InP nanowires were studied using first-principles calculations. The results show that all the simulated nanowires exhibit a semiconducting character, and the band gap decreases with increasing the nanowire size. The band gap difference between the zinc-blende, wurtzite, and twinned InP nanowires and bulk InP can be described by ΔE(g)(wire) = 0.88/D(1.23), ΔE(g)(wire) = 0.79/D(1.22) and ΔE(g)(twin) = 1.3/D(1.19), respectively, where D is the diameter of the nanowires. The valence band maximum (VBM) and conduction band minimum (CBM) originate mainly from the p-orbitals of the P atoms and s-orbitals of the In atoms at the core regions of the nanowires, respectively. The hexagonal (2H) stacking inside the cubic (3C) stacking has no effect on the electronic properties of thin InP nanowires.
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Affiliation(s)
- Dengfeng Li
- Department of Mathematics and Physics, Chongqing University of Posts and Telecommunications, Chongqing, 400065, People's Republic of China
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Narváez AC, Chiaramonte T, Vicaro KO, Clerici JH, Cotta MA. Evidence of space charge regions within semiconductor nanowires from Kelvin probe force microscopy. NANOTECHNOLOGY 2009; 20:465705. [PMID: 19843990 DOI: 10.1088/0957-4484/20/46/465705] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
We have studied the equilibrium electrostatic profile of III-V semiconductor nanowires using Kelvin probe force microscopy. Qualitative agreement of the measured surface potential levels and expected Fermi level variation for pure InP and InAs nanowires is obtained from electrical images with spatial resolution as low as 10 nm. Surface potential mapping for pure and heterostructured nanowires suggests the existence of charge transfer mechanisms and the formation of a metal-semiconductor electrical contact at the nanowire apex.
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Affiliation(s)
- Angela C Narváez
- Departamento de Física Aplicada, Instituto de Física Gleb Wataghin, UNICAMP CP 6165, CEP 13083-970, Campinas, SP, Brazil
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