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Villafañe V, Scaparra B, Rieger M, Appel S, Trivedi R, Zhu T, Jarman J, Oliver RA, Taylor RA, Finley JJ, Müller K. Three-Photon Excitation of InGaN Quantum Dots. PHYSICAL REVIEW LETTERS 2023; 130:083602. [PMID: 36898105 DOI: 10.1103/physrevlett.130.083602] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/18/2022] [Revised: 04/20/2022] [Accepted: 01/27/2023] [Indexed: 06/18/2023]
Abstract
We demonstrate that semiconductor quantum dots can be excited efficiently in a resonant three-photon process, while resonant two-photon excitation is highly suppressed. Time-dependent Floquet theory is used to quantify the strength of the multiphoton processes and model the experimental results. The efficiency of these transitions can be drawn directly from parity considerations in the electron and hole wave functions in semiconductor quantum dots. Finally, we exploit this technique to probe intrinsic properties of InGaN quantum dots. In contrast to nonresonant excitation, slow relaxation of charge carriers is avoided, which allows us to measure directly the radiative lifetime of the lowest energy exciton states. Since the emission energy is detuned far from the resonant driving laser field, polarization filtering is not required and emission with a greater degree of linear polarization is observed compared to nonresonant excitation.
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Affiliation(s)
- Viviana Villafañe
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Bianca Scaparra
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Manuel Rieger
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Stefan Appel
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Rahul Trivedi
- Max-Planck-Institute for Quantum Optics, Hans-Kopfermann-Strasse 1, 85748 Garching, Germany
| | - Tongtong Zhu
- Department of Materials Science, University of Cambridge, Cambridge, United Kingdom of Great Britain and Northern Ireland
| | - John Jarman
- Department of Materials Science, University of Cambridge, Cambridge, United Kingdom of Great Britain and Northern Ireland
| | - Rachel A Oliver
- Department of Materials Science, University of Cambridge, Cambridge, United Kingdom of Great Britain and Northern Ireland
| | - Robert A Taylor
- Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU, United Kingdom
| | - Jonathan J Finley
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Kai Müller
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
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Puchtler TJ, Wang T, Ren CX, Tang F, Oliver RA, Taylor RA, Zhu T. Ultrafast, Polarized, Single-Photon Emission from m-Plane InGaN Quantum Dots on GaN Nanowires. NANO LETTERS 2016; 16:7779-7785. [PMID: 27960480 DOI: 10.1021/acs.nanolett.6b03980] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
We demonstrate single-photon emission from self-assembled m-plane InGaN quantum dots (QDs) embedded on the side-walls of GaN nanowires. A combination of electron microscopy, cathodoluminescence, time-resolved microphotoluminescence (μPL), and photon autocorrelation experiments give a thorough evaluation of the QD structural and optical properties. The QD exhibits antibunched emission up to 100 K, with a measured autocorrelation function of g(2)(0) = 0.28(0.03) at 5 K. Studies on a statistically significant number of QDs show that these m-plane QDs exhibit very fast radiative lifetimes (260 ± 55 ps) suggesting smaller internal fields than any of the previously reported c-plane and a-plane QDs. Moreover, the observed single photons are almost completely linearly polarized aligned perpendicular to the crystallographic c-axis with a degree of linear polarization of 0.84 ± 0.12. Such InGaN QDs incorporated in a nanowire system meet many of the requirements for implementation into quantum information systems and could potentially open the door to wholly new device concepts.
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Affiliation(s)
- Tim J Puchtler
- Department of Physics, University of Oxford , Parks Road, Oxford OX1 3PU, U.K
| | - Tong Wang
- Department of Physics, University of Oxford , Parks Road, Oxford OX1 3PU, U.K
| | - Christopher X Ren
- Dept. Materials Science and Metallurgy, University of Cambridge , 27 Charles Babbage Road, Cambridge CB3 0FS, U.K
| | - Fengzai Tang
- Dept. Materials Science and Metallurgy, University of Cambridge , 27 Charles Babbage Road, Cambridge CB3 0FS, U.K
| | - Rachel A Oliver
- Dept. Materials Science and Metallurgy, University of Cambridge , 27 Charles Babbage Road, Cambridge CB3 0FS, U.K
| | - Robert A Taylor
- Department of Physics, University of Oxford , Parks Road, Oxford OX1 3PU, U.K
| | - Tongtong Zhu
- Dept. Materials Science and Metallurgy, University of Cambridge , 27 Charles Babbage Road, Cambridge CB3 0FS, U.K
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He GS, Zhu J, Yong KT, Hu R, Cui Y, Prasad PN. Backward stimulated Bragg scattering in multiphoton active CdTexSe1−x quantum dots system. J Chem Phys 2009; 131:214301. [DOI: 10.1063/1.3266938] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022] Open
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