Coaxial nanocables of p-type zinc telluride nanowires sheathed with silicon oxide: synthesis, characterization and properties

Electrical transport properties and ultrafast optical nonlinearity of rGO-metal chalcogenide ensembles

In recent times, nanomaterials that harvest solar radiation and transform it into other forms of energy are of considerable interest. Herein, the electrical transport properties of reduced graphene oxide (rGO), rGO-zinc selenide (rGO-ZnSe) and rGO-zinc telluride (rGO-ZnTe) thin films have been investigated at 87-473 K under both dark and illumination conditions. A comparative study of photosensitivity (P) and charge carrier mobility (μ), calculated using a trap-free space charge limited current model, shows the highest values for 54 wt% ZnSe and 50 wt% ZnTe contents (namely samples C1 and C2, respectively). A decreasing trend in P values with increasing temperature is seen in all the samples (rGO, C1, and C2) and has been attributed to enhanced electron-phonon scattering. Also, photosensitivity and change in mobility under illumination show a maximum change for C2 in the entire temperature range. The nonlinear absorption coefficient (β) of C2 is ∼1.6 times higher than that of C1 and both the samples depict a positive nonlinear refractive index when measured with 630 nm femtosecond pulses. Moreover, C2 shows a two-fold faster electron transfer rate as revealed by a time resolved fluorescence study than C1. This, along with better dispersion of ZnTe nanoparticles in the rGO matrix, explains why rGO-ZnTe has better optoelectronic properties as compared to the rGO-ZnSe composite. These results in turn make the rGO-ZnTe composite a promising candidate for optoelectronic and photonic device applications.

Reaction intermediate-induced vapor–liquid–solid growth of silicon oxide nanowires

Jellyfish-like SiO_x nanowires were formed in a reaction intermediate-induced vapor–liquid–solid process, which provides a new method for nanowire growth.

Hot electron-hole plasma dynamics and amplified spontaneous emission in ZnTe nanowires

Key to optimizing and tailoring the optoelectronic properties of semiconductor nanostructures for practical applications is a clear understanding of their carrier interactions and recombination dynamics. Herein, the electron-hole (e-h) plasma dynamics and the electron-phonon coupling interactions in zincblende ZnTe nanowires (NWs) were systematically investigated by time-resolved photoluminescence (TRPL) spectroscopy over a wide range of lattice temperatures (4-300 K) and pump densities. Following intense, non-resonant femtosecond (fs) laser pulse excitation, the excited carriers thermalize to quasi-equilibrium distribution through carrier-carrier and carrier-phonon scattering within a few picoseconds. The peak temperature of the hot electron gas (T_e0) is much higher than the lattice temperature and increases sub-linearly with the pump fluence. The hot electron gas thermalizes in two characteristic carrier density-dependent regimes - i.e., within 35 ps under high carrier densities (e-h plasma) while persisting to 360 ps under low carrier densities (exciton). Temperature-dependent studies of the ZnTe NWs revealed that the acoustic phonons play a significant role in the cooling of the hot e-h plasma in these NWs and the emission band broadening arises from the interplay of the contributions from crystal imperfections, LA and LO phonon scattering and most importantly, from the hot carrier thermalization. For demonstration, e-h plasma-amplified spontaneous emission in ZnTe NWs at room temperature by one- and two-photon excitation was realized. The results provide new insights into carrier interactions and recombination dynamics of ZnTe NWs and highlight their potential for high-efficiency e-h plasma light emitters, sensors and in plasma photochemotherapy.

Uniform silica coating of isoprene-passivated germanium nanowires via Stöber method

This paper describes a solution-based Stöber method for the coating of Ge nanowires (NWs) with a uniform thickness-tunable shell of amorphous silica. Fluorescein isothiocyanate (FITC) incorporated on the Ge–silica core–shell structure was demonstrated.

Tunable p-type conductivity and transport properties of AlN nanowires via Mg doping

Arrays of well-aligned AlN nanowires (NWs) with tunable p-type conductivity were synthesized on Si(111) substrates using bis(cyclopentadienyl)magnesium (Cp(2)Mg) vapor as a doping source by chemical vapor deposition. The Mg-doped AlN NWs are single-crystalline and grow along the [001] direction. Gate-voltage-dependent transport measurements on field-effect transistors constructed from individual NWs revealed the transition from n-type conductivity in the undoped AlN NWs to p-type conductivity in the Mg-doped NWs. By adjusting the doping gas flow rate (0-10 sccm), the conductivity of AlN NWs can be tuned over 7 orders of magnitude from (3.8-8.5) × 10(-6) Ω(-1) cm(-1) for the undoped sample to 15.6-24.4 Ω(-1) cm(-1) for the Mg-doped AlN NWs. Hole concentration as high as 4.7 × 10(19) cm(-3) was achieved for the heaviest doping. In addition, the maximum hole mobility (∼6.4 cm(2)/V s) in p-type AlN NWs is much higher than that of Mg-doped AlN films (∼1.0 cm(2)/V s). (2) The realization of p-type AlN NWs with tunable electrical transport properties may open great potential in developing practical nanodevices such as deep-UV light-emitting diodes and photodetectors.

Single-crystalline ZnTe nanowires for application as high-performance green/ultraviolet photodetector

Single-crystalline ZnTe nanowires were prepared by a simple vapor transport and deposition method. Photodetectors of individual ZnTe nanowires were fabricated to study photoconductivity of the nanowires. It was observed the nanowire photodetectors show the highest visible-light photoconductive gains among all reported photodetectors based on 1D nanostructure semiconductors, including CdS, CdSe, ZnSe, etc. The high photosensitivity and relatively fast response speed are attributable to the high crystal quality of the ZnTe nanowires. These results reveal that such single-crystalline ZnTe nanowires are excellent candidates for optoelectronic applications.

Aligned Si(3)N(4)@SiO(2) coaxial nanocables derived from a polymeric precursor

Well-aligned coaxial nanocables, composed of a crystalline alpha-Si(3)N(4) inner core and amorphous SiO(2) outer shell, were prepared on silicon substrates by pyrolysis of a preceramic polymer (perhydropolysilazane) with iron as catalyst. The nanocables have high density, and the longest nanocable can be up to millimeters. Photoluminescence measurement reveals a strong ultraviolet emission band centered at 360 nm and a weaker visible-light emission at 625 nm. The growth mechanism of the nanocables is discussed in detail.